EUPEC FS300R12KF4

European PowerSemiconductor and
Electronics Company
GmbH + Co. KG
Marketing Information
FS 300 R 12 KF4
61,5
61,5
M6
13
190
31,5
171
57
2,8x0,5
U
V
CX CU
CY
W
CV
CZ CW
4 deep
3,35
5,5
26,4
7
5
3x5=15
GX EX EU GU
GY EY EV GV
+
+
Cu
Cv
Cw
Gu
Gv
Gw
Eu
Ev
Ew
Cx
Cy
Cz
Gx
Gy
Gz
Ex
-
Ey
-
Ez
GZ EZ EW GW
external connection
+ to be done
U
V
W
- external connection
to be done
VWK, May 1996
IGBT-Module
FS 300 R 12 KF4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
VCES
Kollektor-Dauergleichstrom
DC-collector current
IC
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tp=1 ms
ICRM
600 A
Gesamt-Verlustleistung
total power dissipation
tC=25°C, Transistor /transistor
Ptot
2000 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGE
+/- 20 V
Dauergleichstrom
DC forward current
IF
300 A
Periodischer Spitzenstrom
repetitive peak forw. current
tp=1ms
IFRM
600 A
Isolations-Prüfspannung
insulation test voltage
RMS, f=50 Hz, t= 1 min.
VISOL
2,5 kV
iC=300A, vGE=15V, t vj=25°C
vCE sat
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
iC=300A, vGE=15V, t vj=125°C
1200 V
300 A
min.
typ.
-
2,7
max.
3,2 V
-
3,3
3,9 V
6,5 V
Gate-Schwellenspannung
gate threshold voltage
iC=12mA, vCE=vGE, tvj=25°C
vGE(th)
4,5
5,5
Eingangskapazität
input capacity
fO=1MHz,tvj=25°C,vCE=25V,vGE=0V
Cies
-
22
Kollektor-Emitter Reststrom
collector-emitter cut-off current
vCE=1200V, vGE=0V, t vj=25°C
i CES
-
-
-
-
50 mA
Gate-Emitter Reststrom
gate leakage current
vCE=0V, vGE=20V, t vj=25°C
i GES
-
-
400 nA
Emitter-Gate Reststrom
gate leakage current
vCE=0V, vEG=20V, t vj=25°C
i EGS
-
-
400 nA
Einschaltzeit (induktive Last)
turn-on time (inductive load)
iC=300A,vCE=600V
ton
vL= ±15V,R G=6,8Ω, tvj=25°C
-
0,35
- µs
vL= ±15V,R G=6,8Ω, tvj=125°C
-
0,45
- µs
vL= ±15V,R G=6,8Ω, tvj=25°C
-
0,9
- µs
vL= ±15V,R G=6,8Ω, tvj=125°C
-
1,0
- µs
vL= ±15V,R G=6,8Ω, tvj=25°C
-
0,10
- µs
vL= ±15V,R G=6,8Ω, tvj=125°C
-
0,15
- µs
-
2,3
2,9 V
-
2,1
- V
vRM=600V, vEG=10V, t vj=25°C
-
25
- A
vRM=600V, vEG=10V, t vj=125°C
-
65
- A
vCE=1200V, vGE=0V, t vj=125°C
Speicherzeit (induktive Last)
Fallzeit (induktive Last)
storage time (inductive load)
fall time (inductive load)
iC=300A,vCE=600V
iC=300A,vCE=600V
- nF
5 mA
ts
tf
Charakteristische Werte / Characteristic values: Invers-Diode
Durchlaßspannung
forward voltage
iF=300A, vGE=0V, t vj=25°C
VF
iF=300A, vGE=0V, t vj=125°C
Rückstromspitze
Sperrverzögerungsladung
peak reverse recovery current
recovered charge
iF=300A, -di F/dt=300A/µs
iF=300A, -di F/dt=300A/µs
IRM
Qr
vRM=600V, vEG=10V, t vj=25°C
-
4
- µAs
vRM=600V, vEG=10V, t vj=125°C
-
20
- µAs
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Transistor,DC,pro Modul/per module RthJC
0,011 °C/W
Transistor,DC,pro Zweig/per arm
0,064 °C/W
Diode,DC, pro Modul/per module
0,023 °C/W
Diode,DC, pro Zweig/per arm
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
0,140 °C/W
RthCK
pro Zweig / per arm
Höchstzul. Sperrschichttemperatur
max. junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
typ.
0,006 °C/W
typ.
0,036 °C/W
tvj max
Transistor / transistor
Diode / diode
150 °C
tc op
-40...+150 °C
tc op
-40...+125 °C
tstg
-40...+125 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Al2O 3
Anzugsdrehmoment f. mech. Befestigung mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque
Gewicht
weight
M1
terminals M6
3 Nm
M2
G
5...6 Nm
ca. 2300 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
eupec GmbH + Co KG, Max-Planck-Str. 5, D59581 Warstein, Telefon +49 (0)2902/ 764-0, Telefax /764-256
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