European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FS 300 R 12 KF4 61,5 61,5 M6 13 190 31,5 171 57 2,8x0,5 U V CX CU CY W CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy Cz Gx Gy Gz Ex - Ey - Ez GZ EZ EW GW external connection + to be done U V W - external connection to be done VWK, May 1996 IGBT-Module FS 300 R 12 KF4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES Kollektor-Dauergleichstrom DC-collector current IC Periodischer Kollektor Spitzenstrom repetitive peak collector current tp=1 ms ICRM 600 A Gesamt-Verlustleistung total power dissipation tC=25°C, Transistor /transistor Ptot 2000 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGE +/- 20 V Dauergleichstrom DC forward current IF 300 A Periodischer Spitzenstrom repetitive peak forw. current tp=1ms IFRM 600 A Isolations-Prüfspannung insulation test voltage RMS, f=50 Hz, t= 1 min. VISOL 2,5 kV iC=300A, vGE=15V, t vj=25°C vCE sat Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage iC=300A, vGE=15V, t vj=125°C 1200 V 300 A min. typ. - 2,7 max. 3,2 V - 3,3 3,9 V 6,5 V Gate-Schwellenspannung gate threshold voltage iC=12mA, vCE=vGE, tvj=25°C vGE(th) 4,5 5,5 Eingangskapazität input capacity fO=1MHz,tvj=25°C,vCE=25V,vGE=0V Cies - 22 Kollektor-Emitter Reststrom collector-emitter cut-off current vCE=1200V, vGE=0V, t vj=25°C i CES - - - - 50 mA Gate-Emitter Reststrom gate leakage current vCE=0V, vGE=20V, t vj=25°C i GES - - 400 nA Emitter-Gate Reststrom gate leakage current vCE=0V, vEG=20V, t vj=25°C i EGS - - 400 nA Einschaltzeit (induktive Last) turn-on time (inductive load) iC=300A,vCE=600V ton vL= ±15V,R G=6,8Ω, tvj=25°C - 0,35 - µs vL= ±15V,R G=6,8Ω, tvj=125°C - 0,45 - µs vL= ±15V,R G=6,8Ω, tvj=25°C - 0,9 - µs vL= ±15V,R G=6,8Ω, tvj=125°C - 1,0 - µs vL= ±15V,R G=6,8Ω, tvj=25°C - 0,10 - µs vL= ±15V,R G=6,8Ω, tvj=125°C - 0,15 - µs - 2,3 2,9 V - 2,1 - V vRM=600V, vEG=10V, t vj=25°C - 25 - A vRM=600V, vEG=10V, t vj=125°C - 65 - A vCE=1200V, vGE=0V, t vj=125°C Speicherzeit (induktive Last) Fallzeit (induktive Last) storage time (inductive load) fall time (inductive load) iC=300A,vCE=600V iC=300A,vCE=600V - nF 5 mA ts tf Charakteristische Werte / Characteristic values: Invers-Diode Durchlaßspannung forward voltage iF=300A, vGE=0V, t vj=25°C VF iF=300A, vGE=0V, t vj=125°C Rückstromspitze Sperrverzögerungsladung peak reverse recovery current recovered charge iF=300A, -di F/dt=300A/µs iF=300A, -di F/dt=300A/µs IRM Qr vRM=600V, vEG=10V, t vj=25°C - 4 - µAs vRM=600V, vEG=10V, t vj=125°C - 20 - µAs Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Transistor,DC,pro Modul/per module RthJC 0,011 °C/W Transistor,DC,pro Zweig/per arm 0,064 °C/W Diode,DC, pro Modul/per module 0,023 °C/W Diode,DC, pro Zweig/per arm Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per Module 0,140 °C/W RthCK pro Zweig / per arm Höchstzul. Sperrschichttemperatur max. junction temperature Betriebstemperatur operating temperature Lagertemperatur storage temperature typ. 0,006 °C/W typ. 0,036 °C/W tvj max Transistor / transistor Diode / diode 150 °C tc op -40...+150 °C tc op -40...+125 °C tstg -40...+125 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O 3 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Gewicht weight M1 terminals M6 3 Nm M2 G 5...6 Nm ca. 2300 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. 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