European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 (K) C1 E2 (A) E1 G1 C1 A15/97 Mod-E/ 21.Jan 1998 G.Schulze FD 400 R 12 KF 4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prüfspannung collector-emitter voltage DC-collector current repetitive peak collctor current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current insulation test voltage tp=1 ms tC=25°C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. VCES IC ICRM Ptot VGE IF IFRM VISOL Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom gate threshold voltage input capacity collector-emitter cut-off current Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) gate leakage current gate leakage current turn-on time (inductive load) Speicherzeit (induktive Last) storage time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro puls turn-on energie per pulse Abschaltverlustenergie pro Puls turn-off energie loss per pulse i C=400A, vGE=15V, t vj=25°C i C=400A, vGE=15V, t vj=125°C i C=16mA, vCE=vGE, tvj=25°C fO=1MHz,tvj=25°C,vCE=25V, v GE=0V vCE=1200V, v GE=0V, t vj=25°C vCE=1200V, v GE=0V, t vj=125°C vCE=0V, v GE=20V, t vj=25°C vCE=0V, v EG=20V, t vj=25°C i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A, vCE=600V, L s=70nH vL=±15V, R G=3,6 , tvj=125°C i C=400A, vCE=600V, L s=70nH vL=±15V, R G=3,6 , tvj=125°C vCE sat vGE(th) Cies i CES i GES i EGS ,tvj= 25°C ton ,tvj=125°C ,tvj= 25°C ts ,tvj=125°C ,tvj= 25°C tf ,tvj=125°C Eon 1200 400 800 2700 ± 20 400 800 2,5 V A A W V A A kV max. 3,2 3,9 6,5 400 400 - V V V nF mA mA nA nA µs µs µs µs µs µs min. 4,5 - typ. 2,7 3,3 5,5 28 8 32 0,7 0,8 0,9 1,0 0,10 0,15 - 70 - mWs - 60 - mWs - 2,2 2,0 2,7 V 2,5 V - 140 240 - A - A - 18 50 Eoff Charakteristische Werte / Characteristic values Inversdiode / Inverse diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge i F=400A, vGE=0V, t vj=25°C i F=400A, vGE=0V, t vj=125°C i F=400A, vRM=600V, v EG = 10V -diF/dt = 2,0 kA/µs, tvj = 25°C -diF/dt = 2,0 kA/µs, tvj = 125°C i F=400A, vRM=600V, v EG = 10V -diF/dt = 3,0 kA/µs, tvj = 25°C -diF/dt = 3,0 kA/µs, tvj = 125°C vF IRM Qr - µAs - µAs Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand Übergangs-Wärmewiderstand Höchstzul. Sperrschichttemperatur Betriebstemperatur Lagertemperatur thermal resistance, junction to case Transistor / transistor, DC Transistor,DC,pro Zweig/per arm Diode, DC, pro Modul/per module Diode, DC, pro Zweig/per arm thermal resistance, case to heatsink pro Modul / per Module pro Zweig / per arm max. junction temperature pro Modul / per Module operating temperature Transistor / transistor storage temperature RthJC 0,023 0,046 0,044 0,088 0,01 0,02 150 -40...+150 -40...+125 RthCK tvj max tc op tstg °C/W °C/W °C/W °C/W °C/W °C/W °C °C °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage Innere Isolation Anzugsdrehmoment f. mech. Befestigung Anzugsdrehmoment f. elektr. Anschlüsse case, see appendix internal insulation mounting torque terminal connection torque Gewicht weight Seite / page terminals M6 / tolerance +/-15% terminals M4 / tolerance +/-15% terminals M8 M1 M2 G Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection tfg = 10 µs VCC = 750 V vL = ±15 V vCEM = 900 V RGF = RGR = 3,6 iCMK1 3500 A tvj = 125°C iCMK2 3000 A Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions v CEM = VCES - 20nH x |dic/dt| Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 1 AI2O3 5 2 8...10 ca. 1500 Nm Nm Nm g FD 400 R12 KF4 800 800 V GE = 20 V 700 15 V 700 iC [A] iC [A] 12 V 600 600 500 500 400 400 300 300 200 200 100 100 10 V 9V 8V 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 1.0 5.0 v CE [V] FD400R12KF4 1.5 2.0 2.5 3.0 3.5 Bild/Fig. 1 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) VGE = 15V -----Tvj = 25 °C ___Tvj = 125 °C 4.0 4.5 5.0 1200 1400 v CE [V] FD400R12KF4 Bild/Fig. 2 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) tvj = 125 °C 800 1000 t vj = 125 °C 25 °C 700 iC iC [A] 800 [A] 600 500 600 400 400 300 200 200 100 0 0 5 6 7 8 FD400R12KF4 Bild/Fig. 3 Übertragungscharakteristik (typisch) Transfer characteristic (typical) VCE = 20 V 9 10 v GE [V] 11 12 0 200 400 600 FD400R12KF4 Bild/Fig. 4 Rückwärts-Arbeitsbereich Reverse biased safe operating area tvj = 125 °C, vLF = vLR = 15 V, RG = 3,6 800 1000 v CE [V] FD 400 R12 KF4 10-1 800 Diode 6 Z(th)JC [°C/W] 700 iF [A] IGBT 600 3 2 500 10-2 400 300 5 200 3 2 100 10-3 -3 10 2 4 10-2 2 4 10-1 2 4 FD400R12KF4 Bild/Fig. 5 Transienter innerer Wärmewiderstand je Zweig (DC) Transient thermal impedance per arm (DC) 100 2 t [s ] 4 101 0 0.5 1.0 1.5 2.0 FD400R12KF4 Bild/Fig. 6 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of the inverse diode (typical) tvj = 25 °C tvj = 125 °C 2.5 v F [V] 3.0 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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