European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done A15/97 Mod-E/ 21.Jan 1998 G.Schulze FZ 1200 R 12 KF4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prüfspannung collector-emitter voltage DC-collector current repetitive peak collctor current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current insulation test voltage tp=1 ms tC=25°C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. VCES IC ICRM Ptot VGE IF IFRM VISOL Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom gate threshold voltage input capacity collector-emitter cut-off current Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) gate leakage current gate leakage current turn-on time (inductive load) Speicherzeit (induktive Last) Fallzeit (induktive Last) storage time (inductive load) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per puls Abschaltverlustleistung pro Puls turn-off energy loss per puls iC=1,2kA, vGE=15V, t vj=25°C iC=1,2kA, vGE=15V, t vj=125°C iC=48mA, vCE=vGE, tvj=25°C fO=1MHz,tvj=25°C,vCE=25V, v GE=0V vCE=1200V, vGE=0V, t vj=25°C vCE=1200V, vGE=0V, t vj=125°C vCE=0V, v GE=20V, tvj=25°C vCE=0V, v EG=20V, tvj=25°C iC=1,2kA,vCE=600V vL = ±15V, R G = 0,82 , tvj=25° vL = ±15V, R G = 0,82 , tvj=125° iC=1,2kA,vCE=600V vL = ±15V, R G = 0,82 , tvj=25° vL = ±15V, R G = 0,82 , tvj=125° iC=1,2kA,vCE=600V vL = ±15V, R G = 0,82 , tvj=25° vL = ±15V, R G = 0,82 , tvj=125° iC=1,2kA, vCE=600V, L s=70nH vL=±15V,R G=0,82 ,T vj=125°C iC=1,2kA, vCE=600V, L s=70nH vL=±15V,R G=0,82 ,T vj=125°C vCE sat vGE(th) Cies iCES iGES iEGS ton V A A W V A A kV max. 3,2 3,9 6,5 200 400 400 V V V nF mA mA nA nA min. 4,5 - typ. 2,7 3,3 5,5 90 16 100 - - 0,7 0,8 - µs - µs - 0,9 1,0 - µs - µs - 0,10 0,15 - µs - µs - 170 - mWs 190 - mWs ts tf Eon Eoff 1200 1200 2400 7800 ± 20 1200 2400 2,5 - Charakteristische Werte / Characteristic values Inversdiode / Inverse diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge iF=1,2kA, vGE=0V, t vj=25°C iF=1,2kA, vGE=0V, t vj=125°C iF=1,2kA, vRM=600V, v EG = 10V -diF/dt = 6 kA/µs, tvj = 25°C t vj = 125°C iF=1,2kA, vRM=600V, v EG = 10V -diF/dt = 6 kA/µs, tvj = 25°C vF Transistor / transistor, DC Transistor,DC,pro Zweig/per arm pro Modul / per Module pro Modul / per Module Transistor / transistor RthJC terminals M6 / tolerance +/-15% terminals M4 / tolerance +/-15% terminals M8 M1 M2 IRM Qr tvj = 125°C - 2,2 2,0 2,7 V 2,5 V - 400 700 - A - A - 50 150 - µAs - µAs Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand Höchstzul. Sperrschichttemperatur Betriebstemperatur Lagertemperatur thermal resistance, case to heatsink max. junction temperature operating temperature storage temperature RthCK tvj max tc op tstg 0,016 0,032 0,008 150 -40...+125 -40...+125 °C/W °C/W °C/W °C °C °C Mechanische Eigenschaften / Mechanical properties Innere Isolation Anzugsdrehmoment f. mech. Befestigung Anzugsdrehmoment f. elektr. Anschlüsse internal insulation mounting torque terminal connection torque Gewicht weight G Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection tfg = 10 µs VCC = 750 V vL = ±15 V vCEM = 900 V RGF = RGR = 0,82 iCMK1 10000 A tvj = 125°C iCMK2 8000 A Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions v CEM = VCES - 15nH x |dic/dt| Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. AI2O3 5 2 8...10 ca. 1500 Nm Nm Nm g FZ 1200 R12 KF4 2500 2500 iC [A] 2000 iC [A] 2000 VGE=20V 15V 12V 10V 1500 1500 9V 1000 1000 8V 500 500 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 1.0 5.0 v CE [V] FZ1200R12KF4 Bild/Fig. 1 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) VGE = 15V ----- T vj = 25 °C ___ Tvj = 125 °C 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1200 1400 v CE [V] Bild/Fig. 2 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) Tvj = 125 °C 2500 2500 t vj = 125 °C 25 °C iC [A] 2000 iC [A] 2000 1500 1500 1000 1000 500 500 0 1.5 FZ1200R12KF4 5 6 7 8 FZ1200R12KF4 Bild/Fig. 3 Übertragungscharakteristik (typisch) Transfer characteristic (typical) VCE = 20 V 9 10 v GE [V] 11 12 0 0 200 400 600 FZ1200R12KF4 Bild/Fig. 4 Rückwärts-Arbeitsbereich Reverse biased safe operating area tvj = 125 °C, vLF = vLR = 15 V, RG = 0,82 800 1000 v CE [V] FZ 1200 R12 KF4 10-1 2500 6 Z(th)JC [°C/W] Diode iF [A] 2000 3 2 IGBT 1500 10-2 1000 5 3 500 2 10-3 -3 10 2 4 10-2 2 4 10-1 FZ1200R12KF4 Bild/Fig. 5 Transienter innerer Wärmewiderstand (DC) Transient thermal impedance (DC) 2 4 100 2 t [s ] 4 101 0 0.5 1.0 1.5 2.0 FZ1200R12KF4 Bild/Fig. 6 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of the inverse diode (typical) tvj = 25 °C tvj = 125 °C 2.5 v F [V] 3.0 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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