ONSEMI NTMS4503NR2

NTMS4503N
Power MOSFET
28 V, 14 A, N−Channel, SO−8
Features
• Low RDS(on)
• High Power and Current Handling Capability
• Low Gate Charge
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V(BR)DSS
Applications
•
•
•
•
DC/DC Converters
Motor Drives
Synchronous Rectifier − POL
Buck Low−Side
ID MAX
(Note 1)
RDS(on) TYP
7.0 m @ 10 V
28 V
14 A
8.8 m @ 4.5 V
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
28
V
Gate−to−Source Voltage − Continuous
VGS
20
V
Rating
Drain Current
Continuous @ Ta = 25°C (Note 1)
Continuous @ Ta = 25°C (Note 2)
Continuous @ Ta = 25°C (Note 3)
Single Pulse (tp = 10 s)
Operating and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 V, VGS = 10 V, IL = 12.2 A,
L = 1.0 mH, RG = 25 )
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
IDM
S
A
14
12
9.0
40
MARKING DIAGRAM/
PIN ASSIGNMENT
PD
W
2.5
1.66
0.93
8
1
1
TJ, Tstg
−55 to
150
°C
EAS
75
mJ
TL
260
°C
Symbol
Value
Unit
SO−8
CASE 751
STYLE 12
4503N
A
L
Y
W
Source
Source
Source
Gate
8
4503N
ALYW
Total Power Dissipation
TA = 25°C (Note 1)
TA = 25°C (Note 2)
TA = 25°C (Note 3)
ID
G
Drain
Drain
Drain
Drain
(Top View)
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
THERMAL RESISTANCE RATINGS
Rating
Thermal Resistance
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Junction−to−Ambient (Note 3)
RJA
°C/W
50
75
135
1. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in2), t < 10 s.
2. Surface−mounted on FR4 board using 1″ pad size (Cu area 1.127 in2) steady
state.
3. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in2), steady state.
 Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 0
1
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4503NR2
SO−8
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMS4503N/D
NTMS4503N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
28
31
−
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
−
−
22
−
mV/°C
TJ = 25°C
−
−
1.0
A
TJ = 100°C
−
−
25
−
100
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V
V, VDS = 24 V
IGSS
VDS = 0 V, VGS = 20 V
−
nA
ON CHARACTERISTICS (Note 4)
VGS(TH)
VGS = VDS, ID = 250 A
1.0
−
2.0
V
VGS(TH)/TJ
−
−
−5.0
−
mV/°C
RDS(on)
( )
VGS = 10 V, ID = 14 A
−
7.0
8.0
m
VGS = 4.5 V, ID = 10 A
−
8.8
9.8
VDS = 10 V, ID = 14 A
−
30
−
S
pF
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
−
2400
−
Output Capacitance
COSS
−
1000
−
Reverse Transfer Capacitance
CRSS
−
375
−
Total Gate Charge
QG(TOT)
−
23
−
Threshold Gate Charge
QG(TH)
−
2.0
−
−
5.0
−
−
12
−
−
18.5
−
−
70
−
−
21
−
−
23
−
TJ = 25°C
−
0.82
1.2
TJ = 125°C
−
0.65
−
−
48
−
−
23
−
−
25
−
−
25
−
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 0 V,, f = 1.0 MHz,, VDS = 16 A
VGS = 4
4.5
5V
V, VDS = 16 V
V, ID = 10 A
nC
SWITCHING CHARACTERISTICS, VGS = V (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
VGS = 4.5 V, VDD = 16 V, ID = 10 A,
RG = 2.0 tf
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
Ta
Discharge Time
Tb
Reverse Recovery Charge
VGS = 0 V
V, IS = 10 A
VGS = 0 V, dISD/dt = 100 A/s,
IS = 14 A
QRR
4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
V
ns
nC
NTMS4503N
TYPICAL PERFORMANCE CURVES
35
3V
25
2.8 V
20
15
2.6 V
10
5
2.4 V
2.2 V
0
1
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0
2
3
4
5
6
7
9
8
30
25
20
15
10
5
10
TJ = −55°C
TJ = 100°C
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2.5
1.5
2
3
3.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1
ID = 14 A
TJ = 25°C
0.010
0.009
0.008
0.007
0.006
9
3
5
7
11
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
4
0.012
TJ = 25°C
0.011
0.010
VGS = 4.5 V
0.009
0.008
VGS = 10 V
0.007
0.006
0.005
0.004
4
8
16
12
20
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
10000
VGS = 0 V
ID = 14 A
VGS = 4.5 V
TJ = 150°C
1.4
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
0
0.011
1
VDS ≥ 10 V
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
VGS = 10, 3.6, 3.2 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
ID, DRAIN CURRENT (AMPS)
30
1000
1.2
1
100
TJ = 100°C
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTMS4503N
C, CAPACITANCE (pF)
3600
TJ = 25°C
Ciss
3000
2400
Crss
Ciss
1800
1200
Coss
600
0
10
VDS = 0 V
5
VGS = 0 V
0
VGS
5
Crss
10
15
5
20
QT
4
QGS
12
QGD
8
4
1
ID = 10 A
TJ = 25°C
0
5
0
20
VDS
10
20
15
QG, TOTAL GATE CHARGE (nC)
0
25
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
10
VDD = 16 V
ID = 10 A
VGS = 4.5 V
100
IS, SOURCE CURRENT (AMPS)
1000
t, TIME (ns)
VGS
2
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
tr
tf
td(off)
td(on)
10
1
16
VDS
3
VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4200
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES
1
10
RG, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
VGS = 0 V
TJ = 25°C
9
8
7
6
5
4
3
2
1
0
0.4
0.7
0.5
0.6
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
Figure 10. Diode Forward Voltage vs. Current
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4
NTMS4503N
PACKAGE DIMENSIONS
SO−8
CASE 751−07
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
0.25 (0.010)
S
B
1
M
Y
M
4
K
−Y−
G
C
N
X 45 SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
S
J
DIM
A
B
C
D
G
H
J
K
M
N
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0
8
0.25
0.50
5.80
6.20
STYLE 12:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
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5
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0
8
0.010
0.020
0.228
0.244
NTMS4503N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Phone: 81−3−5773−3850
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6
For additional information, please contact your
local Sales Representative.
NTMS4503N/D