NTMS4503N Power MOSFET 28 V, 14 A, N−Channel, SO−8 Features • Low RDS(on) • High Power and Current Handling Capability • Low Gate Charge http://onsemi.com V(BR)DSS Applications • • • • DC/DC Converters Motor Drives Synchronous Rectifier − POL Buck Low−Side ID MAX (Note 1) RDS(on) TYP 7.0 m @ 10 V 28 V 14 A 8.8 m @ 4.5 V D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 28 V Gate−to−Source Voltage − Continuous VGS 20 V Rating Drain Current Continuous @ Ta = 25°C (Note 1) Continuous @ Ta = 25°C (Note 2) Continuous @ Ta = 25°C (Note 3) Single Pulse (tp = 10 s) Operating and Storage Temperature Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 V, VGS = 10 V, IL = 12.2 A, L = 1.0 mH, RG = 25 ) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds IDM S A 14 12 9.0 40 MARKING DIAGRAM/ PIN ASSIGNMENT PD W 2.5 1.66 0.93 8 1 1 TJ, Tstg −55 to 150 °C EAS 75 mJ TL 260 °C Symbol Value Unit SO−8 CASE 751 STYLE 12 4503N A L Y W Source Source Source Gate 8 4503N ALYW Total Power Dissipation TA = 25°C (Note 1) TA = 25°C (Note 2) TA = 25°C (Note 3) ID G Drain Drain Drain Drain (Top View) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week THERMAL RESISTANCE RATINGS Rating Thermal Resistance Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Junction−to−Ambient (Note 3) RJA °C/W 50 75 135 1. Surface−mounted on FR4 board using minimum recommended pad size (Cu area 0.412 in2), t < 10 s. 2. Surface−mounted on FR4 board using 1″ pad size (Cu area 1.127 in2) steady state. 3. Surface−mounted on FR4 board using minimum recommended pad size (Cu area 0.412 in2), steady state. Semiconductor Components Industries, LLC, 2003 November, 2003 − Rev. 0 1 ORDERING INFORMATION Device Package Shipping† NTMS4503NR2 SO−8 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMS4503N/D NTMS4503N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 28 31 − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ − − 22 − mV/°C TJ = 25°C − − 1.0 A TJ = 100°C − − 25 − 100 OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V V, VDS = 24 V IGSS VDS = 0 V, VGS = 20 V − nA ON CHARACTERISTICS (Note 4) VGS(TH) VGS = VDS, ID = 250 A 1.0 − 2.0 V VGS(TH)/TJ − − −5.0 − mV/°C RDS(on) ( ) VGS = 10 V, ID = 14 A − 7.0 8.0 m VGS = 4.5 V, ID = 10 A − 8.8 9.8 VDS = 10 V, ID = 14 A − 30 − S pF Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance gFS CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS − 2400 − Output Capacitance COSS − 1000 − Reverse Transfer Capacitance CRSS − 375 − Total Gate Charge QG(TOT) − 23 − Threshold Gate Charge QG(TH) − 2.0 − − 5.0 − − 12 − − 18.5 − − 70 − − 21 − − 23 − TJ = 25°C − 0.82 1.2 TJ = 125°C − 0.65 − − 48 − − 23 − − 25 − − 25 − Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 0 V,, f = 1.0 MHz,, VDS = 16 A VGS = 4 4.5 5V V, VDS = 16 V V, ID = 10 A nC SWITCHING CHARACTERISTICS, VGS = V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 4.5 V, VDD = 16 V, ID = 10 A, RG = 2.0 tf ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Ta Discharge Time Tb Reverse Recovery Charge VGS = 0 V V, IS = 10 A VGS = 0 V, dISD/dt = 100 A/s, IS = 14 A QRR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 V ns nC NTMS4503N TYPICAL PERFORMANCE CURVES 35 3V 25 2.8 V 20 15 2.6 V 10 5 2.4 V 2.2 V 0 1 RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0 2 3 4 5 6 7 9 8 30 25 20 15 10 5 10 TJ = −55°C TJ = 100°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 2.5 1.5 2 3 3.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1 ID = 14 A TJ = 25°C 0.010 0.009 0.008 0.007 0.006 9 3 5 7 11 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 4 0.012 TJ = 25°C 0.011 0.010 VGS = 4.5 V 0.009 0.008 VGS = 10 V 0.007 0.006 0.005 0.004 4 8 16 12 20 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.6 10000 VGS = 0 V ID = 14 A VGS = 4.5 V TJ = 150°C 1.4 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 0 0.011 1 VDS ≥ 10 V TJ = 25°C ID, DRAIN CURRENT (AMPS) VGS = 10, 3.6, 3.2 V RDS(on), DRAIN−TO−SOURCE RESISTANCE () ID, DRAIN CURRENT (AMPS) 30 1000 1.2 1 100 TJ = 100°C 0.8 0.6 −50 10 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTMS4503N C, CAPACITANCE (pF) 3600 TJ = 25°C Ciss 3000 2400 Crss Ciss 1800 1200 Coss 600 0 10 VDS = 0 V 5 VGS = 0 V 0 VGS 5 Crss 10 15 5 20 QT 4 QGS 12 QGD 8 4 1 ID = 10 A TJ = 25°C 0 5 0 20 VDS 10 20 15 QG, TOTAL GATE CHARGE (nC) 0 25 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge Figure 7. Capacitance Variation 10 VDD = 16 V ID = 10 A VGS = 4.5 V 100 IS, SOURCE CURRENT (AMPS) 1000 t, TIME (ns) VGS 2 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) tr tf td(off) td(on) 10 1 16 VDS 3 VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4200 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES 1 10 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance VGS = 0 V TJ = 25°C 9 8 7 6 5 4 3 2 1 0 0.4 0.7 0.5 0.6 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1.0 Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTMS4503N PACKAGE DIMENSIONS SO−8 CASE 751−07 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 0.25 (0.010) S B 1 M Y M 4 K −Y− G C N X 45 SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X S J DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 STYLE 12: PIN 1. 2. 3. 4. 5. 6. 7. 8. http://onsemi.com 5 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 NTMS4503N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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