ONSEMI NTB125N02R

NTB125N02R, NTP125N02R
Power MOSFET
125 A, 24 V N−Channel
TO−220, D2PAK
Features
• Planar HD3e Process for Fast Switching Performance
• Body Diode for Low trr and Qrr and Optimized for Synchronous
•
•
•
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Operation
Low Ciss to Minimize Driver Loss
Optimized Qgd and RDS(on) for Shoot−through Protection
Low Gate Charge
125 AMPERES, 24 VOLTS
RDS(on) = 3.7 m (Typ)
D
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
24
Vdc
Gate−to−Source Voltage − Continuous
VGS
±20
Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current −
Continuous @ TC = 25°C, Chip
Continuous @ TC = 25°C, Limited by Package
Continuous @ TA = 25°C, Limited by Wires
Single Pulse (tp = 10 s)
RJC
PD
1.1
113.6
°C/W
W
ID
ID
ID
ID
125
120.5
95
250
A
A
A
A
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
RJA
PD
ID
46
2.72
18.6
°C/W
W
A
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
RJA
PD
ID
63
1.98
15.9
°C/W
W
A
Operating and Storage Temperature Range
TJ, Tstg
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk,
L = 1 mH, RG = 25 )
EAS
120
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
TL
FUNCTION
Gate
2
Drain
3
Source
4
Drain
 Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 4
MARKING
DIAGRAMS
TO−220AB
CASE 221A
STYLE 5
4
1
2
125N2R
YWW
3
4
D2PAK
CASE 418AA
STYLE 2
125N2
YWW
°C
260
PIN ASSIGNMENT
1
S
2
1 3
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
PIN
G
125N2
Y
WW
= Specific Device Code
= Year
= Work Week
ORDERING INFORMATION
Shipping†
Device
Package
NTB125N02R
D2PAK
50 Units/Rail
NTB125N02RT4
D2PAK
800/Tape & Reel
TO−220AB
50 Units/Rail
NTP125N02R
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Publication Order Number:
NTB125N02R/D
NTB125N02R, NTP125N02R
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
25
−
28
15
−
−
−
−
−
−
1.5
10
−
−
±100
1.0
−
1.5
5.0
2.0
−
−
−
−
−
3.7
4.9
3.7
4.7
−
−
4.6
6.2
−
44
−
Ciss
−
2710
3440
Coss
−
1105
1670
Crss
−
227
640
td(on)
−
11
22
tr
−
39
80
td(off)
−
27
40
tf
−
21
40
QT
−
23.6
28
Q1
−
5.1
−
Q2
−
11
−
VSD
−
−
−
0.82
0.99
0 65
0.65
1.2
−
−
Vdc
trr
−
36.5
−
ns
ta
−
17.7
−
tb
−
18.8
−
QRR
−
0.024
−
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
Adc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 110 Adc)
(VGS = 4.5 Vdc, ID = 55 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 20 Adc)
RDS(on)
Forward Transconductance (Note 3)
(VDS = 10 Vdc, ID = 15 Adc)
Vdc
mV/°C
m
gFS
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
((VDS = 20 Vdc, VGS = 0 V,, f = 1 MHz))
Transfer Capacitance
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VGS = 10 Vdc, VDD = 10 Vdc,
ID = 40 Adc, RG = 3)
Fall Time
Gate Charge
(VGS = 4.5 Vdc, ID = 40 Adc,
VDS = 10 Vdc) (Note 3)
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
((IS = 55 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
C
NTB125N02R, NTP125N02R
200
200
3.5 V
4.5 V
160
5.0 V
6.0 V
8.0 V
10 V
120
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
4.0 V
3.0 V
80
VGS = 2.5 V
40
0
2
6
4
8
80
TJ = 125°C
TJ = 25°C
40
0
10
TJ = −55°C
0.8
2.4
1.6
3.2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.01
VGS = 10 V
0.008
TJ = 125°C
0.006
TJ = 25°C
0.004
TJ = −55°C
0.002
0
80
40
120
160
200
4.0
0.01
VGS = 4.5 V
TJ = 125°C
0.008
0.006
TJ = 25°C
TJ = −55°C
0.004
0.002
0
40
80
120
160
200
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Temperature
100,000
1.8
1.6
VGS = 0 V
ID = 55 A
VGS = 4.5 V
TJ = 150°C
10,000
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
120
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
VDS ≥ 10 V
160
1.4
1.2
1.0
TJ = 125°C
1000
TJ = 100°C
100
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
0
4.0
8.0
12
16
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
24
7000
VDS = 0 V VGS = 0 V
Ciss
C, CAPACITANCE (pF)
6000
5000
Crss
4000
Ciss
3000
2000
Coss
1000
Crss
TJ = 25°C
0
10
0
5
VGS
5
10
15
20
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTB125N02R, NTP125N02R
10
8.0
VGS
6.0
QT
4.0
Q1
Q2
2.0
ID = 40 A
TJ = 25°C
0
0
8
VDS
16
24
32
40
48
Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000
60
IS, SOURCE CURRENT (AMPS)
100
tr
td(off)
tf
td(on)
10
1
10
100
VGS = 0 V
TJ = 25°C
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
RG, GATE RESISTANCE (Ω)
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
1000
ID, DRAIN CURRENT (AMPS)
t, TIME (ns)
VDS = 10 V
ID = 40 A
VGS = 10 V
VGS = 20 V
SINGLE PULSE
TC = 25°C
100 s
100
1 ms
10 ms
10
dc
RDS(on) Limit
Thermal Limit
Package Limit
1.0
0.1
1.0
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
1.0
NTB125N02R, NTP125N02R
Normalized to RθJC at Steady State
0.1
r(t),
EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED)
1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (s)
Figure 12. Thermal Response
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 5:
PIN 1.
2.
3.
4.
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5
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
10
NTB125N02R, NTP125N02R
PACKAGE DIMENSIONS
D2PAK
CASE 418AA−01
ISSUE O
C
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
J
K
M
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
T B
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.036
0.045 0.055
0.310
−−−
0.100 BSC
0.018 0.025
0.090
0.110
0.280
−−−
0.575 0.625
0.045 0.055
STYLE 2:
PIN 1.
2.
3.
4.
M
VARIABLE
CONFIGURATION
ZONE
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.92
1.14
1.40
7.87
−−−
2.54 BSC
0.46
0.64
2.29
2.79
7.11
−−−
14.60 15.88
1.14
1.40
GATE
DRAIN
SOURCE
DRAIN
U
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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6
For additional information, please contact your
local Sales Representative.
NTB125N02R/D