TENTATIVE STK03Y60 Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=4pF(Typ.) • Low gate charge : Qg=12nC(Typ.) • Low RDS(on) : RDS(on)=5.5Ω(Typ.) Ordering Information Type NO. Marking STK03Y60 Package Code STK03Y60 TO-92 Outline Dimensions unit : mm 4.40~4.80 4.40~4.80 13.50~14.50 0.50 Max. 1.27 Typ. 1.27 Typ. 2 3 0.45 Max. 3.40~3.60 1 TENTATIVE PIN Connections 1. Gate 2. Drain 3. Source 1 TENTATIVE STK03Y60 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 0.3 A IDP 1.2 A PD 625 mW Drain current (DC) ** Drain current (Pulsed) * Total Power dissipation ** Avalanche current (Single) ② IAS 0.3 A Single pulsed avalanche energy ② EAS 53 mJ Avalanche current (Repetitive) ① IAR 0.3 A Repetitive avalanche energy ① EAR 11 mJ TJ 150 Tstg -55~150 Junction temperature Storage temperature range °C * Limited by maximum junction temperature ** Device mounted on a glass-epoxy board Characteristic Thermal resistance Junction-ambient Symbol Typ. Max Unit Rth(J-a) ** - 200 ℃/W TENTATIVE 2 TENTATIVE STK03Y60 N-CH Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250μA, VGS=0 600 - - V Gate threshold voltage VGS(th) ID=250μA, VDS=VGS 3.0 - 5.0 V Drain-source cut-off current IDSS VDS=600V, VGS=0V - - 1 μA Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 nA RDS(ON) VGS=10V, ID=150mA - 5.5 8.5 Ω gfs VDS=10V, ID=150mA - 0.32 - S - 130 - - 20 - Drain-source on-resistance Forward transfer conductance ④ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss - 4 - Turn-on delay time td(on) - 5.5 - - 5 - - 13 - - 28 - - 12 18 - 2.5 3.8 - 3.0 4.5 Rise time VGS=0V, VDS=25V, f=1MHz VDD=300V, ID=0.3A RG=25Ω tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge ③④ VDD=300V, VGS=10V ID=0.3A ③④ Qgd Source-Drain Diode Ratings and Characteristics Characteristic Symbol Source current IS Test Condition pF ns nC (Ta=25°C) Min Typ Max - - 0.3 - - 1.2 Unit Source current(Plused) ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=0.3A - 0.7 1.2 V Reverse recovery time trr - 260 - ns Reverse recovery charge Qrr Is=0.3A, Vgs=0V diS/dt=80A/us - 3.5 - uC A Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=109mH, IAS=0.3A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature TENTATIVE 3 TENTATIVE STK03Y60 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. TENTATIVE 4