Preliminary STK0290P Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=900V(Min.) Low Crss : Crss=5.0F(Typ.) Low gate charge : Qg=18.2nC(Typ.) Low RDS(on) :RDS(on)=7.2Ω(Max.) Ordering Information Type NO. Marking STK0290P Package Code STK0290 TO-220AB-3L Outline Dimensions unit : mm Φ3.70 Max. 3.00 Typ. 9.05~9.35 12.80~13.00 1.37 Max. 1.62 Max. 0.90 Max. 2.60 Max. 2.54 Typ. Preliminary 4.35~4.65 2.54 Typ. 0.60 Max. 12.68~13.48 15.35~16.05 9.80~10.20 PIN Connections 1. Gate 2. Drain 3. Source 1 Preliminary STK0290P Absolute maximum ratings (Tc=25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 900 V Gate-source voltage VGSS ±30 V TC=25℃ 2.2 A TC=100℃ 1.39 A Drain current (DC) ID * IDM 8.8 A Drain power dissipation PD 85 W Drain current (Pulsed) Avalanche current (Single) ② IAS 2.2 A Single pulsed avalanche energy ② EAS 170 mJ Avalanche current (Repetitive) ① IAR 8.8 A Repetitive avalanche energy ① EAR 8.5 mJ TJ 150 °C Tstg -55~150 °C Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 1.47 Junction-ambient Rth(J-A) - 62.5 Preliminary Unit ℃/W 2 Preliminary STK0290P Electrical Characteristics (Tc=25°C) Characteristic Symbol Drain-source breakdown voltage V(BR)DSS Gate threshold voltage VGS(th) Test Condition Min. Typ. Max. Unit ID=250 ㎂, VGS=0V 900 - - V ID=250 ㎂, VGS= VDS 3.0 - 5.0 V Drain-source cut-off current IDSS VDS=900V, VGS=0V - - 10 ㎂ Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 ㎁ Drain-source on-resistance ④ RDS(on) VGS=10V, ID=1.1A - 5.6 7.2 Ω Forward transfer conductance ④ gfs VDS=50V, ID=1.1A - 2.0 - S - 560 675 - 50 65 - 5.0 7.0 - 15 40 - 35 80 - 20 50 - 30 70 - 18.2 21.5 - 3.8 - - 6.0 - Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time VGS=0V, VDS=25V f=1 MHz VDD=450V, ID=2.2A RG=25Ω tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd ③④ VDS=720V, VGS=10V ID=2.2A ③④ Source-Drain Diode Ratings and Characteristics Characteristic Symbol Source current (DC) IS Test Condition ㎊ ㎱ nC (Tc=25°C) Min Typ Max - - 2.2 - - 8.8 Unit Source current (Pulsed) ① ISP Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=2.2A - - 1.4 V Reverse recovery time trr - 400 - ㎱ Reverse recovery charge Qrr IS=2.2A, VGS=0V dIS/dt=100A/㎲ - 1.6 - μC A Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=65mH, IAS=2.2A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse width≤ 300 ㎲, Duty cycle≤ 2% ④ Essentially independent of operating temperature Preliminary 3 Preliminary STK0290P The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. Preliminary 4