TN2124 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Applications ► ► ► ► ► ► ► Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Pin Configuration Ordering Information RDS(ON) VGS(th) Package Option (V) max (Ω) max (V) TO-236AB (SOT-23) 240 15 2.0 TN2124K1-G BVDSS/BVDGS DRAIN -G indicates package is RoHS compliant (‘Green’) SOURCE GATE TO-236AB (SOT-23) (K1) Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature Soldering temperature* -55OC to +150OC 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. Product Marking N1CW W = Code for week sealed TO-236AB (SOT-23) (K1) TN2124 Thermal Characteristics (continuous)(*) (pulsed) Power Dissipation @TA = 25OC (mA) (mA) (W) 134 250 0.36 ID Package TO-236AB (SOT-23) (K1) ID IDR(*) IDRM ( C/W) O ( C/W) (mA) (mA) 200 350 134 250 θjc θja O Notes: * ID (continuous) is limited by max rated Tj . Electrical Characteristics (@25 C unless otherwise specified) O Sym Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage 240 - - V VGS = 0V, ID = 1.0mA VGS(th) Gate threshold voltage 0.8 - 2.0 V VGS = VDS, ID= 1.0mA O Change in VGS(th) with temperature - - -5.5 IGSS Gate body leakage - 0.1 100 nA VGS = ± 20V, VDS = 0V - - 1.0 µA VGS = 0V, VDS = Max Rating IDSS Zero gate voltage drain current - - 100 µA VGS = 0V, VDS = 0.8 Max Rating, TA = 125°C ID(ON) ON-state drain current 140 - - mA VGS = 4.5V, VDS = 25V - - 30 Ω VGS = 3.0V, ID = 25mA - - 15 Ω VGS = 4.5V, ID = 120mA O VGS = 4.5V, ID = 120mA ΔVGS(th) RDS(ON) ΔRDS(ON) Static drain-to-source ON-state resistance Change in RDS(ON) with temperature mV/ C VGS = VDS, ID= 1.0mA - 0.7 1.0 100 170 - Input capacitance - 38 50 COSS Common source output capacitance - 9.0 15 CRSS Reverse transfer capacitance - 3.0 5.0 td(ON) Turn-ON delay time - 4.0 7.0 Rise time - 2.0 5.0 Turn-OFF delay time - 7.0 10 Fall time - 9.0 12 Diode forward voltage drop - - 1.8 V VGS = 0V, ISD = 120mA Reverse recovery time - 400 - ns VGS = 0V, ISD = 120mA GFS Forward transductance CISS tr td(OFF) tf VSD trr %/ C mmho VDS = 25V, ID = 120mA pF ns VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 25V, ID = 140mA, RGEN = 25Ω Notes: (1) All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) (2) All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 10V 90% INPUT 0V PULSE GENERATOR 10% t(ON) td(ON) VDD t(OFF) tr 10% td(OFF) tF D.U.T. 10% INPUT 90% OUTPUT RGEN OUTPUT 0V RL 90% 2 TN2124 Typical Performance Curves Output Characteristics Saturation Characteristics 2.0 1.0 1.6 0.8 8V 1.2 ID (amperes) ID (amperes) VGS = 10V VGS = 10V 8V 6V 4V 0.8 6V 4V 0.6 3V 0.4 3V 0.2 0.4 2V 2V 0 0 0 10 20 30 40 50 0 2 4 6 8 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Temperature 1.0 10 2.0 0.8 1.6 0.6 1.2 PD (watts) GFS (siemens) VDS= 25V -55OC 0.4 0.2 0.8 SOT-23 0.4 O 25 C O TA= 125 C 0.0 0 0 0.2 0.4 0.6 0.8 0 1.0 25 50 100 125 150 O ID (amperes) TA ( C) Thermal Response Characteristics Maximum Rated Safe Operating Area 10 1.0 Thermal Resistance (normalized) TA= 25OC ID (amperes) 75 1.0 SOT-23 (pulsed) 0.1 SOT-23 (DC) 0.8 SOT-23 0.6 T A = 25OC P D = 0.36W 0.4 0.2 0 0.01 0 10 100 0.001 1000 VDS (volts) 0.01 0.1 tp (seconds) 3 1 10 TN2124 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current 50 1.1 VGS = 3V RDS(ON) (ohms) BVDSS (normalized) 40 1.0 30 20 VGS = 4.5V 10 0.9 0 -50 0 50 100 150 0 0.2 0.4 0.6 0.8 1.0 ID (amperes) Tj ( OC) Transfer Characteristics VTH and RDS Variation with Temperature 1.0 2.0 RDS(ON) @ 4.5V, 120mA 1.4 1.6 O VGS(th) (normalized) 125 C ID (amperes) TA = -55OC 25OC 0.6 VDS = 25V 0.4 1.2 1.2 1.0 0.8 0.8 VGS(th) @ 1mA 0.2 0.4 0.6 0 0 0 2 4 6 8 -50 10 0 50 100 150 Tj ( OC) VGS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 100 8 f = 1MHz VGS (volts) C (picofarads) 75 50 CISS 6 VDS = 10V 100pF 4 VDS = 40V 25 2 COSS CRSS 0 32 pF 0 0 10 20 30 0 40 0.2 0.4 0.6 QG (nanocoulombs) VDS (volts) 4 0.8 1.0 RDS(ON) (normalized) 0.8 TN2124 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch D 3 E1 E Gauge Plane 0.25 1 L 2 e Seating Plane L1 b e1 View B Top View A A View B A2 Seating Plane A1 Symbol MIN Dimension (mm) View A-A A Side View A A1 A2 b D E E1 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90 - 1.30 MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 e e1 0.95 BSC 1.90 BSC L L1 0O 0.40 0.50 0.60 θ 0.54 REF 8O JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. Drawings not to scale. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TN2124 B101107 5