SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 24 AMP / 500 Volts 0.2 Ω N-Channel Power MOSFET DESIGNER’S DATA SHEET Features: • • • • • • • • • • Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Surface Mount Power Package TX, TXV, Space Level Screening Available Replacement for IXTH24N50 Types TO-3 Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 500 Volts Gate – Source Voltage VGS ±20 Volts ID 24 Amps Repetitive IAR 21 Amps Repetitive Single Pulse EAR EAS 1 690 mJ Top & Tstg -55 to +150 ºC Continuous Drain Current (Tj limited) Avalanche Current Avalanche Energy Operating & Storage Temperature Thermal Resistance, Junction to Case RθJC Total Device Dissipation @ TC=25ºC Total Device Dissipation @ TC=55ºC PD Package Outline: TO-3 Pin Out: Pin 1: GATE Pin 2: SOURCE Pin 3: DRAIN Notes: 1. P/N: SFF 24N50/3: Pin Diameter : 0.043” 0.038” 2. P/N: SFF24N50/3T: Pin Diameter: 0.063” 0.058” 2x Ø.165 .151 .135 MAX 0.75 (typ 0.6) 167 126 .675 .655 .525 MAX ºC/W WATTS 2x R.188 MAX SEATING PLANE 2x .043 .038 Ø.875 MAX 2 .440 .420 .450 .250 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 2x .225 .205 2x .312 MIN 1 1.197 1.177 DATA SHEET #: F00175E DOC SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics @ T J = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units BVDSS 500 –– –– Volts RDS(on) –– –– 0.2 Ω ID(on) 24 –– –– A VGS(th) 2.0 –– 4.0 V gfs 8 12 –– mho IDSS –– –– –– –– 250 1000 µA At rated VGS IGSS –– –– –– –– +100 -100 nA VGS=10 Volts 50% rated VDS 50% Rated ID VDD=50% Rated VDS 50% Rated ID RG= 6.2Ω VGS=10 Volts Qg Qgs Qgd –– –– –– 135 28 62 180 40 85 nC 16 33 65 30 30 45 130 40 nsec tf –– –– –– –– VSD –– –– 1.5 V trr QRR –– –– –– –– 500 –– nsec nC Ciss Coss Crss –– –– –– 4200 450 135 –– –– –– pF Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) Drain to Source On State Resistance (VGS=10 V, ID=50% Rated ID) On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10V) Gate Threshold Voltage (VDS=VGS, ID= 4mA) Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance TJ=25ºC IF=10A Di/dt=100A/µsec VGS=0 Volts VDS=25 Volts f=1 MHz td(on) tr td(off) For thermal derating curves and other characteristics please contact SSDI Marketing Department. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00175E DOC