Technische Information / Technical Information IGBT-Module IGBT-Modules FZ400R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage T vj= 25° C VCES 1200 V Kollektor-Dauergleichstrom DC-collector current T C = 70°C T C = 25 °C IC,nom. 400 A IC 510 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 80°C ICRM 800 A Gesamt-Verlustleistung total power dissipation T C=25°C, Transistor Ptot 2500 W VGES +/- 20V V IF 400 A IFRM 800 A I2t 65 k A2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. typ. max. - 3,20 3,7 V - 3,85 - V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 400A, VGE = 15V, Tvj = 25°C VCE sat IC = 400A, VGE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 16 mA, VCE = VGE, T vj = 25°C Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 26 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 1,7 - nF Gateladung gate charge VGE = -15V ... + 15V, VCE = 600V QG - 4,2 - µC Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 25°C ICES - - 5 mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: MOD-D2; Martin Knecht date of publication : 2003-01-13 approved by: SM TM; Wilhelm Rusche revision: 3.0 1/9 DB_FZ400R12KS4_3.0 2003-01-13 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ400R12KS4 Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE = ±15V, RG = 2,2 Ω, T vj = 25°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 400 A, VCC = 600V Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 400 A, VCC = 600V td,on VGE = ±15V, RG = 2,2 Ω, T vj = 25°C tr VGE = ±15V, RG = 2,2 Ω, T vj = 125°C VGE = ±15V, RG = 2,2 Ω, T vj = 25°C td,off VGE = ±15V, RG = 2,2 Ω, T vj = 125°C VGE = ±15V, RG = 2,2 Ω, T vj = 25°C 0,10 - µs 0,13 - µs - 0,09 - µs - 0,10 - µs - 0,53 - µs - 0,59 - µs tf - 0,06 - µs - 0,07 - µs Eon - 38 - mJ Eoff - 29 - mJ ISC - 2600 - A LσCE - 16 - nH RCC'+EE' - 0,5 - mΩ min. typ. max. - 2,0 2,4 V - 1,7 - V - 270 - A - 450 - A - 30 - µC - 80 - µC - 16 - mJ - 38 - mJ IC = 400 A, VCC = 600V, VGE = ±15V RG = 2,2 Ω, T vj = 125°C, Lσ = 85 nH IC = 400 A, VCC = 600V, VGE = ±15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse RG = 2,2 Ω, T vj = 125°C, Lσ = 85 nH Kurzschlußverhalten SC Data T Vj≤125°C, VCC=900 V, VCEmax=VCES -LσCE ·di/dt tP ≤ 10µs, VGE ≤ 15V Modulinduktivität stray inductance module Modul-Leitungswiderstand, Anschlüsse - Chip lead resistance, terminals - chip - IC = 400 A, VCC = 600V VGE = ±15V, RG = 2,2 Ω, T vj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse max. IC = 400 A, VCC = 600V VGE = ±15V, RG = 2,2 Ω, T vj = 125°C Fallzeit (induktive Last) fall time (inductive load) typ. T C = 25°C Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage IF = 400 A, VGE = 0V, Tvj = 25°C Rückstromspitze peak reverse recovery current IF = 400 A, - diF/dt = 4100 A/µs VF IF = 400 A, VGE = 0V, Tvj = 125°C VR = 600V, VGE = -15V, Tvj = 25°C IRM VR = 600V, VGE = -15V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 400 A, - diF/dt = 4100 A/µs VR = 600V, VGE = -15V, Tvj = 25°C Qr VR = 600V, VGE = -15V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 400 A, - diF/dt = 4100 A/µs VR = 600V, VGE = -15V, Tvj = 25°C VR = 600V, VGE = -15V, Tvj = 125°C 2/9 Erec DB_FZ400R12KS4_3.0 2003-01-13 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ400R12KS4 Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,050 K/W - - 0,085 K/W RthCK - 0,010 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature T vj max - - 150 °C Betriebstemperatur operation temperature T vj op -40 - 125 °C Lagertemperatur storage temperature T stg -40 - 125 °C Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λ Paste = 1 W/m*K / λ grease = 1 W/m*K RthJC Diode/Diode, DC Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate Cu Innere Isolation internal insulation Al2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance distance 11 mm CTI comperative tracking index 425 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Schraube / screw M6 M Anschlüsse / terminals M6 Anschlüsse / terminals M4 Gewicht weight M G 3,0 - 6,0 Nm 2,5 - 5,0 Nm 1,1 - 2,0 Nm 340 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3/9 DB_FZ400R12KS4_3.0 2003-01-13 Technische Information / Technical Information FZ400R12KS4 IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) output characteristic (typical) I C = f (VCE) VGE = 15V 800 700 Tvj = 25°C 600 Tvj = 125°C IC [A] 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 5,0 5,5 6,0 VCE [V] Ausgangskennlinienfeld (typisch) output characteristic (typical) I C = f (VCE) Tvj = 125°C 800 700 600 VGE = 8V VGE = 9V VGE = 10V IC [A] 500 VGE = 12V VGE = 15V 400 VGE = 20V 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 VCE [V] 4/9 DB_FZ400R12KS4_3.0 2003-01-13 Technische Information / Technical Information FZ400R12KS4 IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) transfer characteristic (typical) I C = f (VGE) VCE = 20V 800 700 Tvj = 25°C Tvj= 125°C 600 IC [A] 500 400 300 200 100 0 5 6 7 8 9 10 11 12 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) forward characteristic of inverse diode (typical) IF = f (VF) 800 700 Tvj = 25°C Tvj = 125°C 600 IF [A] 500 400 300 200 100 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 VF [V] 5/9 DB_FZ400R12KS4_3.0 2003-01-13 Technische Information / Technical Information FZ400R12KS4 IGBT-Module IGBT-Modules Schaltverluste (typisch) switching losses (typical) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) VGE=±15V, RG = 2,2 Ω, VCE = 600V, Tvj = 125°C 120 100 Eon Eoff Erec E [mJ] 80 60 40 20 0 0 100 200 300 400 500 600 700 800 IC [A] Schaltverluste (typisch) switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=±15V, IC = 400 A , VCE = 600V , Tvj = 125°C 200 180 Eon Eoff 160 Erec E [mJ] 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 RG [Ω] 6/9 DB_FZ400R12KS4_3.0 2003-01-13 Technische Information / Technical Information FZ400R12KS4 IGBT-Module IGBT-Modules Sicherer Arbeitsbereich IGBT (RBSOA) VGE = ±15V, RG=2,2 Ω, Tvj=125°C reverse bias safe operation area IGBT (RBSOA) 900 IC [A] 800 700 IC,Modul IC,Chip 600 500 400 300 200 100 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7/9 DB_FZ400R12KS4_3.0 2003-01-13 Technische Information / Technical Information FZ400R12KS4 IGBT-Module IGBT-Modules Transienter Wärmewiderstand transient thermal impedance ZthJC = f (t) 0,1 ZthJC [K / W] Zth:IGBT Zth:Diode 0,01 0,001 0,001 0,01 0,1 1 10 t [s] i ri [K/kW] : IGBT τi [s] : IGBT ri [K/kW] : Diode τi [s] : Diode 1 2 3 4 5,59 16,93 22,06 5,43 0,0020 0,0300 0,0660 1,6550 13,15 34,56 35,61 1,68 0,0015 0,0327 0,0561 0,3872 8/9 DB_FZ400R12KS4_3.0 2003-01-13 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ400R12KS4 Gehäusemaße / Schaltbild Package outline / Circuit diagram 9/9 DB_FZ400R12KS4_3.0 2003-01-13