Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC S Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tvj = 25° C VCES 1200 V TC = 80 °C IC,nom. 400 A TC = 25 °C IC 625 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 800 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 2500 W VGES +/- 20V V IF 400 A IFRM 800 A I t 2 27,4 kA s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode 2 I t - value, Diode VR = 0V, t p = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. 2 Charakteristische Werte / Characteristic values min. typ. max. - 2,1 2,6 V - 2,4 2,9 V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 400A, V GE = 15V, Tvj = 25°C VCE sat IC = 400A, V GE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 16mA, V CE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V...+15V QG - 4,2 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cies - 26 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cres - 1,7 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current VGE= 0V, Tvj= 25°C, V CE= 1200V ICES - - 5 mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, V GE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: MOD-D2; Mark Münzer date of publication: 2003-01-29 approved by: SM TM; Wilhelm Rusche revision: 3.0 1 (9) DB_BSM400GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC S Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE = ±15V, R G = 2,2Ω, Tvj = 25°C td,on VGE = ±15V, R G = 2,2Ω, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) tr td,off VGE = ±15V, R G = 2,2Ω, Tvj = 25°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 400A, V CC = 600V, V GE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 400A, V CC = 600V, V GE = 15V RG = 2,2Ω, Tvj = 125°C, Lσ = 90nH RG = 2,2Ω, Tvj = 125°C, Lσ = 90nH - µs - µs - 0,09 - µs - 0,1 - µs - 0,54 - µs - 0,59 - µs tf - 0,06 - µs - 0,09 - µs Eon - 38 - mJ Eoff - 51 - mJ ISC - 2350 - A LσCE - 16 - nH RCC‘+EE‘ - 0,5 - mΩ min. typ. max. tP ≤ 10µs, V GE ≤ 15V, R G = 2,2Ω TVj≤125°C, V CC=900V, V CEmax=VCES -LσCE ·di/dt Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip 0,09 0,09 IC = 400A, V CC = 600V VGE = ±15V, R G = 2,2Ω, Tvj = 125°C Kurzschlußverhalten SC Data - IC = 400A, V CC = 600V VGE = ±15V, R G = 2,2Ω, Tvj = 25°C VGE = ±15V, R G = 2,2Ω, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) max. IC = 400A, V CC = 600V VGE = ±15V, R G = 2,2Ω, Tvj = 25°C VGE = ±15V, R G = 2,2Ω, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) typ. IC = 400A, V CC = 600V TC=25°C Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage IF = 400A, V GE = 0V, Tvj = 25°C Rückstromspitze peak reverse recovery current IF = 400A, - di F/dt = 4100A/µs VF IF = 400A, V GE = 0V, Tvj = 125°C VR = 600V, V GE = -15V, Tvj = 25°C IRM VR = 600V, V GE = -15V, Tvj = 125°C Sperrverzögerungsladung recovered charge 1,8 2,3 V 1,7 2,2 V - 325 - A - 430 - A IF = 400A, - di F/dt = 4100A/µs VR = 600V, V GE = -15V, Tvj = 25°C Qr VR = 600V, V GE = -15V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy - - 41 - µC - 80 - µC - 16 - mJ - 33 - mJ IF = 400A, - di F/dt = 4100A/µs VR = 600V, V GE = -15V, Tvj = 25°C VR = 600V, V GE = -15V, Tvj = 125°C 2 (9) Erec DB_BSM400GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC S Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,050 K/W - - 0,090 K/W RthCK - 0,010 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj max - - 150 °C Betriebstemperatur operation temperature Tvj op -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Innerer Wärmewiderstand thermal resistance, junction to case pro Transistor / per transistor, DC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λPaste = 1 W/m * K / λgrease = 1 W/m * K RthJC pro Diode / per Diode, DC Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance distance 11 mm CTI comperative tracking index 225 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Schraube / screw M6 M Anschlüsse / terminals M6 Anschlüsse / terminals M4 Gewicht weight M 3,0 - 6,0 Nm 2,5 - 5,0 Nm 1,1 - 2,0 Nm G 340 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (9) DB_BSM400GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information BSM400GA120DLC S IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 800 700 Tvj = 25°C 600 Tvj = 125°C IC [A] 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) T vj = 125°C 800 700 VGE = 17V 600 VGE = 15V VGE = 13V IC [A] 500 VGE = 11V VGE = 9V 400 VGE = 7V 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4 (9) DB_BSM400GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information BSM400GA120DLC S IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 800 700 Tvj = 25°C Tvj = 125°C 600 IC [A] 500 400 300 200 100 0 5 6 7 8 9 10 11 12 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 800 700 Tvj = 25°C Tvj = 125°C 600 IF [A] 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5 (9) DB_BSM400GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information BSM400GA120DLC S IGBT-Module IGBT-Modules Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=±15V, RG = 2,2 Ω, VCE = 600V, T vj = 125°C 140 120 Eoff Eon Erec E [mJ] 100 80 60 40 20 0 0 80 160 240 320 400 480 560 640 720 800 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=±15V , I C = 400A , V CE = 600V , T vj = 125°C 180 160 Eoff Eon 140 Erec E [mJ] 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 RG [Ω] 6 (9) DB_BSM400GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information BSM400GA120DLC S IGBT-Module IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) 1 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 t [s] i ri [K/kW] : IGBT τi [s] : IGBT ri [K/kW] : Diode τi [s] : Diode 1 2 3 4 5,59 16,93 22,06 5,43 0,002 0,03 0,066 1,655 11,78 31,20 34,04 12,99 0,002 0,03 0,072 0,682 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = ±15V, R G = 2,2 Ω, T vj= 125°C 900 800 700 600 IC [A] ZthJC [K / W] 0,1 IC,Modul 500 IC,Chip 400 300 200 100 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7 (9) DB_BSM400GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC S Gehäusemaße / Schaltbild Package outline / Circuit diagram 8 (9) DB_BSM400GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC S Anhang C-Serie Appendix C-series Gehäuse spezifische Werte Housing specific values typ. CTI comperative tracking index 425 Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip TC=25°C LσCE 16 nH RCC‘+EE‘ 0,5 mΩ Gehäusemaße C-Serie Package outline C-series 9 (9) DB_BSM400GA120DLCS_3.0 2003-01-29