ETC DBBSM400GA120DLCS30

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM400GA120DLC S
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Tvj = 25° C
VCES
1200
V
TC = 80 °C
IC,nom.
400
A
TC = 25 °C
IC
625
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
ICRM
800
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
2500
W
VGES
+/- 20V
V
IF
400
A
IFRM
800
A
I t
2
27,4
kA s
VISOL
2,5
kV
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
2
I t - value, Diode
VR = 0V, t p = 10ms, T Vj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
2
Charakteristische Werte / Characteristic values
min.
typ.
max.
-
2,1
2,6
V
-
2,4
2,9
V
VGE(th)
4,5
5,5
6,5
V
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 400A, V GE = 15V, Tvj = 25°C
VCE sat
IC = 400A, V GE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 16mA, V CE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V...+15V
QG
-
4,2
-
µC
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cies
-
26
-
nF
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cres
-
1,7
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VGE= 0V, Tvj= 25°C, V CE= 1200V
ICES
-
-
5
mA
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, V GE = 20V, Tvj = 25°C
IGES
-
-
400
nA
prepared by: MOD-D2; Mark Münzer
date of publication: 2003-01-29
approved by: SM TM; Wilhelm Rusche
revision: 3.0
1 (9)
DB_BSM400GA120DLCS_3.0
2003-01-29
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM400GA120DLC S
Charakteristische Werte / Characteristic values
min.
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
VGE = ±15V, R G = 2,2Ω, Tvj = 25°C
td,on
VGE = ±15V, R G = 2,2Ω, Tvj = 125°C
Anstiegszeit (induktive Last)
rise time (inductive load)
tr
td,off
VGE = ±15V, R G = 2,2Ω, Tvj = 25°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
IC = 400A, V CC = 600V, V GE = 15V
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
IC = 400A, V CC = 600V, V GE = 15V
RG = 2,2Ω, Tvj = 125°C, Lσ = 90nH
RG = 2,2Ω, Tvj = 125°C, Lσ = 90nH
-
µs
-
µs
-
0,09
-
µs
-
0,1
-
µs
-
0,54
-
µs
-
0,59
-
µs
tf
-
0,06
-
µs
-
0,09
-
µs
Eon
-
38
-
mJ
Eoff
-
51
-
mJ
ISC
-
2350
-
A
LσCE
-
16
-
nH
RCC‘+EE‘
-
0,5
-
mΩ
min.
typ.
max.
tP ≤ 10µs, V GE ≤ 15V, R G = 2,2Ω
TVj≤125°C, V CC=900V, V CEmax=VCES -LσCE ·di/dt
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
0,09
0,09
IC = 400A, V CC = 600V
VGE = ±15V, R G = 2,2Ω, Tvj = 125°C
Kurzschlußverhalten
SC Data
-
IC = 400A, V CC = 600V
VGE = ±15V, R G = 2,2Ω, Tvj = 25°C
VGE = ±15V, R G = 2,2Ω, Tvj = 125°C
Fallzeit (induktive Last)
fall time (inductive load)
max.
IC = 400A, V CC = 600V
VGE = ±15V, R G = 2,2Ω, Tvj = 25°C
VGE = ±15V, R G = 2,2Ω, Tvj = 125°C
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
typ.
IC = 400A, V CC = 600V
TC=25°C
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
IF = 400A, V GE = 0V, Tvj = 25°C
Rückstromspitze
peak reverse recovery current
IF = 400A, - di F/dt = 4100A/µs
VF
IF = 400A, V GE = 0V, Tvj = 125°C
VR = 600V, V GE = -15V, Tvj = 25°C
IRM
VR = 600V, V GE = -15V, Tvj = 125°C
Sperrverzögerungsladung
recovered charge
1,8
2,3
V
1,7
2,2
V
-
325
-
A
-
430
-
A
IF = 400A, - di F/dt = 4100A/µs
VR = 600V, V GE = -15V, Tvj = 25°C
Qr
VR = 600V, V GE = -15V, Tvj = 125°C
Abschaltenergie pro Puls
reverse recovery energy
-
-
41
-
µC
-
80
-
µC
-
16
-
mJ
-
33
-
mJ
IF = 400A, - di F/dt = 4100A/µs
VR = 600V, V GE = -15V, Tvj = 25°C
VR = 600V, V GE = -15V, Tvj = 125°C
2 (9)
Erec
DB_BSM400GA120DLCS_3.0
2003-01-29
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM400GA120DLC S
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
-
-
0,050
K/W
-
-
0,090
K/W
RthCK
-
0,010
-
K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Tvj max
-
-
150
°C
Betriebstemperatur
operation temperature
Tvj op
-40
-
125
°C
Lagertemperatur
storage temperature
Tstg
-40
-
125
°C
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Transistor / per transistor, DC
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
λPaste = 1 W/m * K / λgrease = 1 W/m * K
RthJC
pro Diode / per Diode, DC
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Al2O3
Kriechstrecke
creepage distance
20
mm
Luftstrecke
clearance distance
11
mm
CTI
comperative tracking index
225
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Schraube / screw M6
M
Anschlüsse / terminals M6
Anschlüsse / terminals M4
Gewicht
weight
M
3,0
-
6,0
Nm
2,5
-
5,0
Nm
1,1
-
2,0
Nm
G
340
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3 (9)
DB_BSM400GA120DLCS_3.0
2003-01-29
Technische Information / Technical Information
BSM400GA120DLC S
IGBT-Module
IGBT-Modules
Ausgangskennlinie (typisch)
Output characteristic (typical)
IC = f (VCE)
V GE = 15V
800
700
Tvj = 25°C
600
Tvj = 125°C
IC [A]
500
400
300
200
100
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
VCE [V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
IC = f (VCE)
T vj = 125°C
800
700
VGE = 17V
600
VGE = 15V
VGE = 13V
IC [A]
500
VGE = 11V
VGE = 9V
400
VGE = 7V
300
200
100
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
VCE [V]
4 (9)
DB_BSM400GA120DLCS_3.0
2003-01-29
Technische Information / Technical Information
BSM400GA120DLC S
IGBT-Module
IGBT-Modules
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
IC = f (VGE)
VCE = 20V
800
700
Tvj = 25°C
Tvj = 125°C
600
IC [A]
500
400
300
200
100
0
5
6
7
8
9
10
11
12
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
IF = f (VF)
800
700
Tvj = 25°C
Tvj = 125°C
600
IF [A]
500
400
300
200
100
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
VF [V]
5 (9)
DB_BSM400GA120DLCS_3.0
2003-01-29
Technische Information / Technical Information
BSM400GA120DLC S
IGBT-Module
IGBT-Modules
Schaltverluste (typisch)
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
Switching losses (typical) VGE=±15V, RG = 2,2 Ω, VCE = 600V, T vj = 125°C
140
120
Eoff
Eon
Erec
E [mJ]
100
80
60
40
20
0
0
80
160
240
320
400
480
560
640
720
800
IC [A]
Schaltverluste (typisch)
Switching losses (typical)
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
VGE=±15V , I C = 400A , V CE = 600V , T vj = 125°C
180
160
Eoff
Eon
140
Erec
E [mJ]
120
100
80
60
40
20
0
0
2
4
6
8
10
12
14
RG [Ω]
6 (9)
DB_BSM400GA120DLCS_3.0
2003-01-29
Technische Information / Technical Information
BSM400GA120DLC S
IGBT-Module
IGBT-Modules
Transienter Wärmewiderstand
Transient thermal impedance
ZthJC = f (t)
1
0,01
Zth:Diode
Zth:IGBT
0,001
0,001
0,01
0,1
1
10
t [s]
i
ri [K/kW] : IGBT
τi [s]
: IGBT
ri [K/kW] : Diode
τi [s]
: Diode
1
2
3
4
5,59
16,93
22,06
5,43
0,002
0,03
0,066
1,655
11,78
31,20
34,04
12,99
0,002
0,03
0,072
0,682
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
VGE = ±15V, R G = 2,2 Ω, T vj= 125°C
900
800
700
600
IC [A]
ZthJC
[K / W]
0,1
IC,Modul
500
IC,Chip
400
300
200
100
0
0
200
400
600
800
1000
1200
1400
VCE [V]
7 (9)
DB_BSM400GA120DLCS_3.0
2003-01-29
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM400GA120DLC S
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
8 (9)
DB_BSM400GA120DLCS_3.0
2003-01-29
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM400GA120DLC S
Anhang C-Serie
Appendix C-series
Gehäuse spezifische Werte
Housing specific values
typ.
CTI
comperative tracking index
425
Modulinduktivität
stray inductance module
Modul Leitungswiderstand,
Anschlüsse – Chip
module lead resistance,
terminals – chip
TC=25°C
LσCE
16
nH
RCC‘+EE‘
0,5
mΩ
Gehäusemaße C-Serie
Package outline C-series
9 (9)
DB_BSM400GA120DLCS_3.0
2003-01-29