Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tvj= 25° C VCES TC = 80 °C IC,nom. 75 A TC = 25 °C IC 170 A 1200 V Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 150 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 690 W VGES +/- 20V V IF 75 A IFRM 150 A I t 2 1,19 kA s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode 2 I t - value, Diode VR = 0V, t p = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. 2 Charakteristische Werte / Characteristic values min. typ. max. - 2,1 2,6 V - 2,4 2,9 V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 75A, V GE = 15V, Tvj = 25°C VCE sat IC = 75A, V GE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 3mA, V CE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V...+15V QG - 0,8 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cies - 5,1 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cres - 0,33 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, V GE = 0V, Tvj = 25°C ICES - - 5 mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, V GE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: MOD-D2; Mark Münzer date of publication: 2003-01-10 approved by: SM TM; Wilhelm Rusche revision: 3.0 1(8) DB_BSM75GB120DLC_3.0 2003-01-10 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE = ±15V, R G = 10Ω, Tvj = 25°C td,on VGE = ±15V, R G = 10Ω, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) tr td,off VGE = ±15V, R G = 10Ω, Tvj = 25°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 75A, V CE = 600V, V GE = ±15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 75A, V CE = 600V, V GE = ±15V RG = 10Ω, Tvj = 125°C, Lσ = 60nH RG = 10Ω, Tvj = 125°C, Lσ = 60nH - µs - µs - 0,05 - µs - 0,05 - µs - 0,30 - µs - 0,35 - µs tf - 0,05 - µs - 0,07 - µs Eon - 7,5 - mJ Eoff - 9 - mJ ISC - 540 - A LσCE - 40 - nH RCC‘+EE‘ - 1,0 - mΩ min. typ. max. tP ≤ 10µs, V GE ≤ 15V, R G = 10Ω TVj≤125°C, V CC=900V, V CEmax=VCES -LσCE ·dI/dt Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip 0,05 0,06 IC = 75A, V CE = 600V VGE = ±15V, R G = 10Ω, Tvj = 125°C Kurzschlußverhalten SC Data - IC = 75A, V CE = 600V VGE = ±15V, R G = 10Ω, Tvj = 25°C VGE = ±15V, R G = 10Ω, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) max. IC = 75A, V CE = 600V VGE = ±15V, R G = 10Ω, Tvj = 25°C VGE = ±15V, R G = 10Ω, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) typ. IC = 75A, V CE = 600V TC=25°C Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage IF = 75A, V GE = 0V, Tvj = 25°C Rückstromspitze peak reverse recovery current IF = 75A, - di F/dt = 2000A/µs VF IF = 75A, V GE = 0V, Tvj = 125°C VR = 600V, V GE = -15V, Tvj = 25°C IRM VR = 600V, V GE = -15V, Tvj = 125°C Sperrverzögerungsladung recovered charge 1,8 2,3 V 1,7 2,2 V - 85 - A - 105 - A IF = 75A, - di F/dt = 2000A/µs VR = 600V, V GE = -15V, Tvj = 25°C Qr VR = 600V, V GE = -15V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy - - 9 - µC - 16,5 - µC - 3 - mJ - 6,2 - mJ IF = 75A, - di F/dt = 2000A/µs VR = 600V, V GE = -15V, Tvj = 25°C VR = 600V, V GE = -15V, Tvj = 125°C 2(8) Erec DB_BSM75GB120DLC_3.0 2003-01-10 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,18 K/W - - 0,50 K/W RthCK - 0,05 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj max - - 150 °C Betriebstemperatur operation temperature Tvj op -40 - 125 °C Tstg -40 - 125 °C RthJC Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λΠαστε = 1 W/m * K / λgrease = 1 W/m * K Diode/Diode, DC Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance distance 11 mm CTI comperative tracking index 275 Anzugsdrehmoment f. mech. Befestigung mounting torque Schraube / screw M6 M 3,0 - 6,0 Nm Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Anschlüsse / terminals M5 M 2,5 - 5,0 Nm Gewicht weight G 250 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) DB_BSM75GB120DLC_3.0 2003-01-10 Technische Information / Technical Information BSM75GB120DLC IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 150 125 Tvj = 25°C Tvj = 125°C IC [A] 100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) T vj = 125°C 150 125 VGE = 17V VGE = 15V VGE = 13V IC [A] 100 VGE = 11V VGE = 9V VGE = 7V 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) DB_BSM75GB120DLC_3.0 2003-01-10 Technische Information / Technical Information BSM75GB120DLC IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 150 125 Tvj = 25°C Tvj = 125°C IC [A] 100 75 50 25 0 5 6 7 8 9 10 11 12 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 150 125 Tvj = 25°C Tvj = 125°C IF [A] 100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) DB_BSM75GB120DLC_3.0 2003-01-10 Technische Information / Technical Information BSM75GB120DLC IGBT-Module IGBT-Modules Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=±15V, RG=10 Ω, VCE = 600V, T vj = 125°C 24 Eoff 20 Eon Erec E [mJ] 16 12 8 4 0 0 25 50 75 100 125 150 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=±15V , I C = 75A , VCE = 600V , T vj = 125°C 30 Eoff 25 Eon Erec E [mJ] 20 15 10 5 0 0 10 20 30 40 50 60 RG [Ω] 6(8) DB_BSM75GB120DLC_3.0 2003-01-10 Technische Information / Technical Information BSM75GB120DLC IGBT-Module IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) 1 Zth:Diode Zth:IGBT 0,01 0,001 0,001 0,01 0,1 1 10 t [s] i ri [K/kW] : IGBT τi [s] : IGBT ri [K/kW] : Diode τi [s] : Diode 1 2 3 4 20,13 60,93 79,4 19,54 0,002 0,03 0,066 1,655 65,43 173,31 189,08 72,18 0,002 0,03 0,072 0,682 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = ±15V, R G = 10 Ω, T vj= 125°C 175 150 125 IC [A] ZthJC [K / W] 0,1 IC,Modul 100 IC,Chip 75 50 25 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) DB_BSM75GB120DLC_3.0 2003-01-10 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC 8(8) DB_BSM75GB120DLC_3.0 2003-01-10