UMS CHA4693-QGG

CHA4693-QGG
RoHS COMPLIANT
17-27GHz Variable Gain Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
UMS
A4693
YYWW
The CHA4693-QGG is a variable gain
broadband three-stage monolithic amplifier.
It is designed for a wide range of applications,
typically commercial communication systems.
The circuit is manufactured with a power
pHEMT process, 0.15µm gate length, via
holes through the substrate and air bridges.
Vd1, Vd2
RFin
RFout
It is available in lead-free SMD package.
Gc1 Vg12 Gc2
Main Features
Gc3
Vg3
On board measurements
24
■ Broadband performance 17-27GHz
20
Linear Gain (dB)
■ 20dB gain
■ 28dBm output IP3 @ gain max
■ 24dB gain control range
■ 28L-QFN5x5
■ ESD protected (see page 14)
16
12
8
4
0
-4
-8
14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29
Frequency (GHz)
Main Characteristics
Tamb. = 25°C, Vd = 4.5V
Symbol
Fop
Parameter
Min
Operating frequency range
Typ
17
Max
Unit
27
GHz
G
Small signal gain
20
dB
Gc
Gain control range
24
dB
Output Intercept Point order 3 @ gain max.
28
dBm
OIP3
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA4693-QGG8144 - 23 May 08
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Electrical Characteristics
Tamb. = 25°C, Vd 1,2 = 4.5V, GcX with X=1,2,3
Symbol
Parameter
Min
Typ
Unit
27
GHz
Fop
Operating frequency range
G
Nominal gain @ gain max.
20
dB
NF
Noise Figure @ gain max.
7.5
dB
Noise Figure @ gain min.
24
dB
Input Return Loss (Fop<21GHz) (any GcX)
-9
dB
Input Return Loss (Fop>21GHz) (any GcX)
-12
dB
Output Return Loss (Fop<21GHz) (any GcX)
-9
dB
Output Return Loss (Fop>21GHz) (any GcX)
-12
dB
Output 3rd order Intercept Point @ gain max.
28
dBm
Output 3rd order Intercept Point @ gain min.
19
dBm
Output Power at 1dB gain compression
@ gain max.
22
dBm
Gain control range (Fop<20GHz)
22
dB
Gain control range (Fop>20GHz)
24
dB
DC drain voltage
4.5
V
Id
Drain bias quiescent current (*)
250
mA
Idc
Drain current at 1dB gain compression
300
mA
Vg12,3
Gate bias voltage
-1.2
V
GcX
DC gain control voltage
RLin
RLout
OIP3
P1dB
Gc
Vd1,2
17
Max
-2
+0,6
V
(*) Id not affected by GcX.
These values are representative of on board measurements as defined on the drawing
97365 (see page 16).
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Specifications subject to change without notice
17-27GHz Variable Gain Amplifier
CHA4693-QGG
Absolute Maximum Ratings (*)
Tamb = +25°C
Symbol
Vd1,2
Parameter
Drain bias voltage
Id
Power supply quiescent current
Vg
Gate bias voltage
Values
Unit
5
V
300
mA
-2 to 0
V
-2.5 to +1
V
GcX
DC gain control voltage
Pin
RF input power @ gain max.
8
dBm
Top
Operating temperature range
-40 to +85
°C
175
°C
-55 to +125
°C
Tj
Tstg
Junction temperature
Storage temperature range
(*) Operation of this device above anyone of these parameters may cause permanent damage.
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Specifications subject to change without notice
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Device thermal performances:
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode
considered).
The temperature is monitored at the package back side side interface (Tcase) as shown
below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below than the maximum value specified in the next table. So, the system PCB must
be designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintened below than the maximum temperature specified in order to guarantee the nominal
device life time (MTTF) (see the curve Pdis. Max).
DEVICE THERMAL SPECIFICATION : CHA4693-QGG
Max. junction temperature (Tj max)
:
169 °C
Max. continuous dissipated power @ Tcase=
85 °C :
1,1 W
=> Pdiss derating above Tcase=
85 °C :
13 mW /°C
Junction-Case thermal resistance (Rth J-C)*
:
<74 °C/W
Min. package back side operating temperature**
:
-40 °C
Max. package back side operating temperature**
:
85 °C
Min. storage temperature
:
-55 °C
Max. storage temperature
:
125 °C
*Rth J-C is calculated is a worst case where the hotter junction of the MMIC is considered.
**Tcase=Package back side temperature measured under the die-attach-pad.
Tcase
1,2
1
0,6
0,4
0,2
Pdiss. Max. (W)
Pdiss. Max. (W)
0,8
Example of QFN 16L 3x3
back-side view, temperature
reference point (Tcase) location.
0
-50
-25
0
25
50
75
100
125
Tcase (°C)
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Specifications subject to change without notice
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Typical Measured Performance
Tamb. = +25°C, Vd 1,2 = +4.5V, Vg12,3 tuned for Id = 250mA
Measurements in the package access planes, using the proposed land pattern & board
97365, as defined page 16.
Linear Gain versus Frequency
24
20
GcX=-2.0V
Linear Gain (dB)
16
GcX=-1.0V
12
GcX=-0.9V
8
4
GcX=-0.8V
0
GcX=-0.7V
GcX=-0.6V
GcX=-0.4V
-4
GcX=+0.6V
-8
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Frequency (GHz)
Linear Gain versus Gain Control Voltage
24
20
Linear Gain (dB)
16
12
8
4
0
Freq=17GHz
Freq=27GHz
Freq=22GHz
-4
-8
-2,0 -1,8 -1,6 -1,4 -1,2 -1,0 -0,8 -0,6 -0,4 -0,2
0,0
0,2
0,4
0,6
Gain Control Voltage (V)
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Specifications subject to change without notice
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Gain Control Range (dB)
Gain Control Range versus Frequency
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
28
29
Frequency (GHz)
Return Losses (dB)
Return Losses versus Frequency and Gain Control Voltage
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
S22
S11
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Frequency (GHz)
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Specifications subject to change without notice
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Typical Package Sij parameters for Gc1, Gc2, Gc3 = -2.0V
Tamb. = +25°C, Vd 1,2 = +4.5V, Id = 250mA
Freq (GHz)
2,0
3,0
4,0
5,0
6,0
7,0
8,0
9,0
10,0
11,0
12,0
13,0
14,0
15,0
16,0
17,0
17,5
18,0
18,5
19,0
19,5
20,0
20,5
21,0
21,5
22,0
22,5
23,0
23,5
24,0
24,5
25,0
25,5
26,0
26,5
27,0
28,0
29,0
30,0
31,0
32,0
33,0
34,0
35,0
36,0
37,0
38,0
39,0
40,0
dB(S11)
-1,6
-3,2
-6,8
-11,6
-11,1
-9,6
-8,0
-7,6
-8,0
-7,4
-7,8
-7,1
-7,8
-9,0
-13,1
-13,3
-11,2
-9,6
-8,8
-8,4
-8,9
-9,7
-9,6
-10,6
-11,8
-13,3
-14,9
-17,2
-18,3
-18,5
-19,7
-20,3
-18,4
-17,3
-18,1
-23,1
-25,6
-24,7
-15,8
-9,0
-6,3
-3,7
-2,6
-1,4
-1,7
0,4
-0,1
-0,1
-1,1
Ph(S11) (°)
105
55
-11
-104
173
125
93
58
23
-10
-47
-78
-109
-134
-152
-132
-128
-133
-146
-158
-169
179
174
161
150
137
134
139
134
130
132
119
102
81
52
32
23
36
15
-28
-90
-134
-169
164
138
127
109
95
82
dB(S12)
-62,6
-64,1
-84,6
-75,6
-69,7
-62,7
-62,1
-63,1
-64,2
-64,7
-64,2
-70,6
-57,9
-50,7
-51,1
-52,8
-52,4
-53,6
-53,7
-53,0
-55,7
-54,9
-58,8
-60,3
-56,0
-54,6
-54,3
-55,6
-54,2
-52,0
-48,1
-46,1
-45,0
-43,5
-43,4
-43,1
-39,4
-40,6
-40,1
-38,5
-36,1
-36,4
-40,1
-42,7
-46,8
-55,8
-46,0
-48,7
-50,9
Ph(S12) (°)
-93
-151
64
162
66
56
5
-28
-90
-128
176
-173
163
110
57
36
28
19
12
0
-2
-9
-29
16
32
3
1
18
17
33
23
15
-7
-7
-21
-35
-54
-72
-91
-111
-131
-167
157
139
119
-165
143
135
90
dB(S2 1)
-35,2
-26,3
-35,7
-29,5
-16,8
-11,8
-6,5
-3,1
-0,5
3,5
7,0
12,6
18,2
22,0
21,1
20,8
20,7
20,5
20,4
20,5
20,6
20,6
20,7
20,7
20,5
20,3
20,0
19,9
19,8
19,8
19,7
20,0
20,1
20,4
20,8
21,1
21,2
17,8
9,8
0,8
-10,4
-20,6
-29,4
-37,1
-43,1
-52,9
-43,0
-48,2
-50,0
Ph(S21) (°)
-166
-30
-141
51
-70
-167
121
50
-16
-72
-133
167
92
-5
-99
-173
152
118
84
49
13
-24
-58
-94
-131
-167
157
122
86
47
13
-25
-64
-104
-148
167
60
-61
-178
86
-5
-85
-161
146
97
152
117
144
57
dB(S22)
-10,7
-6,2
-1,8
-1,9
-2,7
-4,0
-6,5
-10,3
-14,5
-14,9
-14,5
-13,2
-11,3
-9,2
-9,8
-9,4
-9,5
-9,5
-9,6
-9,8
-10,3
-11,0
-11,2
-11,3
-11,4
-12,0
-12,5
-12,7
-12,9
-13,5
-13,9
-14,6
-16,1
-17,4
-18,9
-19,8
-23,3
-20,5
-18,3
-15,5
-13,1
-10,5
-7,8
-5,5
-4,1
-2,3
-1,1
-0,5
-0,6
Ph(S22) (°)
74
152
109
74
40
7
-26
-50
-61
-57
-64
-71
-78
-100
-119
-132
-139
-144
-151
-159
-165
-172
-176
-179
174
168
162
154
145
132
121
102
86
75
53
23
-37
-44
-103
-122
-149
-167
178
160
142
128
112
99
87
Refer to the “definition of the Sij reference planes” section below.
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Specifications subject to change without notice
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Typical Measured Performance
Tamb. = +25°C, Vd 1,2 = +4.5V, Vg12,3 tuned for Id = 250mA
Measurements in the plan of the connectors (losses not deembeded), using the proposed
land pattern & board 97365, as defined page 16.
Linear Gain versus Frequency and Temperature
24
20
Linear Gain (dB)
16
GcX=-2.0V
12
-40°C
+25°C
8
4
GcX=-0.9V
0
+75°C
-4
-8
-12
GcX=+0.6V
-16
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Frequency (GHz)
Gain Control Range per stage versus Frequency (with GcX=+0.6V)
16
14
Gain Control Range (dB)
Stage 3
12
10
8
Stage 1
6
4
Stage 2
2
0
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Frequency (GHz)
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Specifications subject to change without notice
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Noise Figure versus Gain Control Voltage @ 25°C
28
26
Freq=22GHz
24
Freq=27GHz
Noise Figure (dB)
22
20
18
16
Freq=17GHz
14
12
10
8
6
4
2
0
-2,0 -1,8 -1,6 -1,4 -1,2 -1,0 -0,8 -0,6 -0,4 -0,2
0,0
0,2
0,4
0,6
Gain Control Voltage (V)
Noise Figure (dB)
Noise Figure versus Frequency and Temperature
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
GcX=+0.6V
+75°C
+25°C
GcX=-0.9V
-40°C
GcX=-2.0V
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Frequency (GHz)
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CHA4693-QGG
17-27GHz Variable Gain Amplifier
Output IP3 versus Dual Carrier Output Power and Temperature @ 17GHz
36
32
GcX=-2V
24
GcX=-0.9V
20
GcX=0V
16
-40°C
+25°C
+75°C
12
8
4
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
Dual Carrier Output Power (dBm)
Output IP3 versus Dual Carrier Output Power and Temperature @ 21GHz
36
32
GcX=-2V
28
Output IP3 (dBm)
24
GcX=-0.9V
20
GcX=0V
16
-40°C
+25°C
+75°C
12
8
4
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
Dual Carrier Output Power (dBm)
Output IP3 versus Dual Carrier Output Power and Temperature @ 27GHz
36
32
GcX=-2V
28
Output IP3 (dBm)
Output IP3 (dBm)
28
24
GcX=-0.9V
20
16
GcX=0V
-40°C
+25°C
+75°C
12
8
4
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
Dual Carrier Output Power (dBm)
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Specifications subject to change without notice
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Note:
To decrease Noise or OIP3 variation versus gain control, it is possible to bias
separately the 3 gain control voltages, Gc1, Gc2, Gc3.
To limit Noise figure variation, keep Gc1 at -2V
To limit OIP3 variation, keep Gc3 at -2V
Output Power at 1dB Gain Compression versus Frequency and Temperature for GcX=-2V
26
+25°C
Output Power at
1dB Gain Compression (dBm)
24
-40°C
22
+75°C
20
18
16
14
12
10
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Frequency (GHz)
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Specifications subject to change without notice
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Gain and Output Power versus Input Power and Temperature @ 17.5GHz
GcX=-2V
22
18
14
GcX=-0.9V
10
6
2
-2
-40°C
+25°C
+75°C
-6
-10
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
Input Power (dBm)
Gain and Output Power versus Input Power and Temperature @ 22GHz
26
Gain (dB) and Output Power (dBm)
GcX=-2V
22
18
14
GcX=-0.9V
10
6
2
-2
-40°C
+25°C
+75°C
-6
-10
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
Input Power (dBm)
Gain and Output Power versus Input Power and Temperature @ 26.5GHz
26
Gain (dB) and Output Power (dBm)
Gain (dB) and Output Power (dBm)
26
GcX=-2V
22
18
14
GcX=-0.9V
10
6
2
-2
-40°C
+25°C
+75°C
-6
-10
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
Input Power (dBm)
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Specifications subject to change without notice
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Package outline
It is recommended to ground the pin #22 through the PCB board.
Note
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Specifications subject to change without notice
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Due to ESD protection circuits on RF input and output, an external capacitance might be
requested to isolate the product from external voltage that could be present on the RF
accesses.
12
24
Vd1, Vd2
RFin
RFout
2
17
Gc1
Vg12
Gc2
Gc3
Vg3
8
27
9
14
26
ESD protections are implemented on each gate accesses.
The DC connections do not include any decoupling capacitor in package, therefore it is
mandatory to provide a good external DC decoupling on the PC board, as close as possible
to the package.
Definition of the Sij reference planes
The reference planes are defined from
the footprint of the recommended
characterization board 97365 shown
below.
The reference is the symmetrical axis of
the package. The input and output
reference planes are located at 3.66mm
offset (input wise and output wise
respectively) from this axis. Then, the
given Sij incorporates this land pattern.
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Specifications subject to change without notice
17-27GHz Variable Gain Amplifier
CHA4693-QGG
Recommended footprint for 28L-QFN5X5
Unit: mm
SMD mounting procedure
The SMD leadless package has been designed for high volume surface mount PCB
assembly process. The dimensions and footprint required for the PCB (motherboard) are
given in the drawing above.
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Ref. : DSCHA4693-QGG8144 - 23 May 08
15/16
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
CHA4693-QGG
17-27GHz Variable Gain Amplifier
Proposed Assembly board “97365” for the 28L-QFN5x5 products
characterization.
-
Compatible with the proposed footprint.
Based on typically Ro4003 / 8mils or equivalent.
Using a microstrip to coplanar transition to access the package.
Recommended for the implementation of this product on a module board.
Vg1,2 Vg3
Gc1 Gc2
Vd
Vd
Gc3
Decoupling capacitors of 10nF ±10% are recommended for all DC accesses.
Ordering Information
QFN 5x5 RoHS compliant package:
CHA4693-QGG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United Monolithic
Semiconductors S.A.S.
Ref. : DSCHA4693-QGG8144 - 23 May 08
16/16
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax: +33 (0)1 69 33 03 09
Specifications subject to change without notice