TF218THC Ordering number : ENA0890 SANYO Semiconductors DATA SHEET N-channel Silicon Junction FET TF218THC Electret Condenser Microphone Applications Features • • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Symbol Conditions Ratings VGDO IG Gate Current Drain Current Unit --20 V 10 mA Junction Temperature ID PD Tj 150 °C Storage Temperature Tstg --55 to +150 °C Allowable Power Dissipation 1 mA 100 mW Marking: A Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82907GB TI IM TC-00000868 No. A0890-1/5 TF218THC Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage Ratings Conditions V(BR)GDO min typ Cutoff Voltage VGS(off) IG=--100µA VDS=5V, ID=1µA --0.2 Drain Current IDSS VDS=5V, VGS=0V 140* Forward Transfer Admittance Input Capacitance yfs Ciss VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1MHz Unit max --20 V --0.6 0.5 --1.0 V 350* µA 1.0 mS 3.5 pF 0.65 pF [Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.] Voltage Gain GV ∆GVV ∆Gvf Reduced Voltage Characteristic Frequency Characteristic Input Impedance VIN=10mV, f=1kHz --3.0 VIN=10mV, f=1kHz, VCC=4.5→1.5V --1.2 dB --3.5 f=1kHz to 110Hz f=1kHz Output Impedance ZIN ZO Total Harmonic Distortion THD VIN=30mV, f=1kHz Output Noise Voltage VNO VIN=0V, A curve --1.0 25 dB dB MΩ f=1kHz 1000 Ω 1.2 % --110 dB * : The TF218THC is classified by IDSS as follows : (unit : µA) Rank 4 5 IDSS 140 to 240 210 to 350 Package Dimensions Test Circuit unit : mm (typ) 7031-001 Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic Top View 0.2 1.4 1kΩ 0.25 VCC=4.5V VCC=1.5V 0.8 1.2 3 33µF + 15pF 2 1 0.1 0.2 0.2 0.45 VTVM V THD B A 0.34 OSC Output Impedance 0.07 Bottom View 0.07 1 : Drain 2 : Source 3 : Gate SANYO : VTFP ID -- VDS 450 450 400 400 350 300 VGS=0V 250 200 --0.1V 150 --0.2V 100 --0.3V --0.4V 50 0 0 1 2 3 4 5 6 ID -- VDS 500 Drain Current, ID -- µA Drain Current, ID -- µA 500 7 --0.5V 350 300 VGS=0V 250 200 --0.1V 150 100 --0.2V 50 --0.3V --0.4V 0 8 Drain-to-Source Voltage, VDS -- V 9 10 IT02310 0 1 2 3 --0.5V 4 Drain-to-Source Voltage, VDS -- V 5 IT03015 No. A0890-2/5 TF218THC 360 400 320 µA 50 3 = SS A ID 0µ 25 A 0µ 15 200 150 100 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 Gate-to-Source Voltage, VGS -- V 120 0 --1.0 0 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 Gate-to-Source Voltage, VGS -- V Cutoff Voltage, VGS(off) -- V 1.0 0.9 0.8 0.7 0.6 --0 IT02313 VDS=5V ID=1µA -0.65 1.1 --0.1 VGS(off) -- IDSS -0.70 VDS=5V VGS=0V f=1kHz 1.2 --0.9 IT02312 yfs -- IDSS 1.3 Forward Transfer Admittance, yfs -- mS 160 40 0 --0.7 -0.60 -0.55 -0.50 -0.45 -0.40 -0.35 0.5 -0.30 0 100 200 300 400 Drain Current, IDSS -- µA 500 IT02314 0 200 Allowable Power Dissipation, PD -- mW 250µA 150µA I DSS= 350µA 1.0 300 400 0.1 500 IT02315 PD -- Ta 120 THD : VCC=4.5V f=1kHz IDSS : VDS=5.0V 10 100 Drain Current, IDSS -- µA THD -- VIN 100 Total Harmonic Distortion, THD -- % 200 80 50 100 80 60 40 20 0 0 50 100 150 Input Voltage, VIN -- mV 200 0 20 40 7 5 3 2 Reverse Transfer Capacitance, Crss -- pF 10 80 100 120 140 160 IT02317 Crss -- VDS 5 VGS=0V f=1MHz 60 Ambient Temperature, Ta -- °C IT02316 Ciss -- VDS 2 Input Capacitance, Ciss -- pF 280 240 25 °C 350 300 VDS=5V Ta =7 5° C Drain Current, ID -- µA Drain Current, ID -- µA 450 250 ID -- VGS 400 VDS=5V --2 5° C ID -- VGS 500 VGS=0V f=1MHz 3 2 1.0 7 5 3 2 0.1 1.0 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT03814 7 1.0 2 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V 3 IT03815 No. A0890-3/5 TF218THC GV : VCC=4.5V VIN=10mV RL=1.0kΩ f=1kHz IDSS : VDS=5.0V --1 --2 --3 --4 --5 --6 --7 0 100 200 300 400 Drain Current, IDSS -- µA Total Harmonic Distortion, THD -- % THD : VCC=4.5V VIN=30mV f=1MHz IDSS : VDS=5.0V 2.0 1.5 1.0 0.5 --0.7 --0.9 --1.1 --1.3 --1.5 --1.7 100 200 300 400 Drain Current, IDSS -- µA 500 IT02321 ZIN -- IDSS 32 0 ZIN :VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 31 30 29 28 27 26 0 100 200 300 400 Drain Current, IDSS -- µA 500 IT02322 0 930 920 910 300 400 500 IT02323 VNO : VCC=4.5V VIN=0V, ACurve RL=1.0kΩ IDSS : VDS=5.0V --112 Output Noise Voltage, VNO -- dB 940 200 VNO -- IDSS --111 ZO : VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 950 100 Drain Current, IDSS -- µA ZO -- IDSS 960 Output Impedance, ZO -- Ω ∆GVV : VCC=4.5V→1.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 0 THD -- IDSS 2.5 ∆GVV -- IDSS --0.5 500 IT02320 Input Impedance, ZIN -- MΩ Voltage Gain, GV -- dB Reduced Voltage Characteristic, ∆GVV -- dB GV -- IDSS 0 --113 --114 --115 --116 --117 --118 --119 --120 900 0 100 200 300 Drain Current, IDSS -- µA 400 500 IT02324 0 100 200 300 Drain Current, IDSS -- µA 400 500 IT02325 No. A0890-4/5 TF218THC SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No. A0890-5/5