PD - 96135
IRF7309QPbF
l
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
www.irf.com
HEXFET® Power MOSFET
S1
N-CHANNEL MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
VDSS
N-Ch
P-Ch
30V
-30V
RDS(on) 0.050Ω 0.10Ω
P-CHANNEL MOSFET
Top View
SO-8
1
10/24/07
IRF7309QPbF
nA
2
www.irf.com
IRF7309QPbF
www.irf.com
3
IRF7309QPbF
4
www.irf.com
IRF7309QPbF
www.irf.com
5
IRF7309QPbF
6
www.irf.com
IRF7309QPbF
www.irf.com
7
IRF7309QPbF
8
www.irf.com
IRF7309QPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 24. For N and P Channel HEXFETS
www.irf.com
9
IRF7309QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
'
',0
%
$
$
+
>@
(
;E
>@
$
$
0,//,0(7(56
0,1
0$;
$ E F
'
(
H
%$6,&
%$6,&
H
+
%$6,&
%$6,&
$
; H
H
,1&+(6
0,1
0$;
.
/
\
.[
&
\
>@
;/
;F
& $ %
127(6
',0(16,21,1*72/(5$1&,1*3(5$60(<0
&21752//,1*',0(16,210,//,0(7(5
',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@
287/,1(&21)250672-('(&287/,1(06$$
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@
',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72
$68%675$7(
)22735,17
;>@
>@
;>@
;>@
SO-8 Part Marking
(;$03/(7+,6,6$1,5)026)(7
,17(51$7,21$/
5(&7,),(5
/2*2
;;;;
)
'$7(&2'(<::
3 '(6,*1$7(6/($')5((
352'8&7237,21$/
< /$67',*,72)7+(<($5
:: :((.
$ $66(0%/<6,7(&2'(
/27&2'(
3$57180%(5
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
IRF7309QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2007
www.irf.com
11