AOSMD AO6701

AO6701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO6701 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6701 is Pb-free (meets ROHS & Sony
259 specifications). AO6701L is a Green Product ordering
option. AO6701 and AO6701L are electrically identical.
VDS (V) = -30V
ID = -2.3A (VGS = -10V)
RDS(ON) < 135mΩ (VGS = -10V)
RDS(ON) < 185mΩ (VGS = -4.5V)
RDS(ON) < 265mΩ (VGS = -2.5V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<[email protected]
A
S
G
1 6
2 5
3 4
K
N/C
D
D
K
S
A
G
TSOP6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain Current A
Pulsed Drain Current
TA=70°C
IDM
B
TA=25°C
Continuous Forward Current A
TA=70°C
TA=25°C
Power Dissipation
TA=70°C
±12
-2.3
V
-1.8
A
-15
IF
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Thermal Characteristics Schottky
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C
PD
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
IFM
B
Schottky
-30
VKA
Schottky reverse voltage
Pulsed Forward Current
ID
MOSFET
20
2
V
1
A
1.15
10
0.92
0.7
0.59
-55 to 150
-55 to 150
°C
Typ
78
106
64
Max
110
150
80
Units
109.4
136.5
58.5
135
175
80
W
°C/W
°C/W
AO6701
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.6
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-15
±100
VGS=-10V, ID=-2.3A
VGS=-4.5V, ID=-2A
135
185
mΩ
VGS=-2.5V, ID=-1A
195
265
mΩ
VDS=-5V, ID=-2.3A
8
VSD
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
V
A
135
Forward Transconductance
Rg
-1.4
nA
190
gFS
Crss
-1
µA
107
Static Drain-Source On-Resistance
Output Capacitance
Units
154
TJ=125°C
RDS(ON)
Coss
Max
V
VDS=-24V, VGS=0V
VGS(th)
IS
Typ
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-15V, ID=-2.0A
-0.85
mΩ
S
-1
V
-1.35
A
409
pF
55
pF
42
pF
12
Ω
4.9
nC
0.6
nC
Qgd
Gate Drain Charge
1.6
nC
tD(on)
Turn-On DelayTime
6.9
ns
tr
Turn-On Rise Time
3.3
ns
tD(off)
Turn-Off DelayTime
38.5
ns
tf
trr
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=7.5Ω,
RGEN=3Ω
13.2
ns
IF=-2.0A, dI/dt=100A/µs
15
Qrr
Body Diode Reverse Recovery Charge IF=-2.0A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=0.5A
8
ns
nC
Body Diode Reverse Recovery Time
Irm
Maximum reverse leakage current
CT
Junction Capacitance
trr
Qrr
SchottkyReverse Recovery Time
Schottky Reverse Recovery Charge
0.39
VR=16V
VR=16V, TJ=125°C
VR=10V
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
0.5
0.1
20
34
5.2
0.8
V
mA
pF
10
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO6701
MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
20
-5V
-10V
15
8
25°C
-4V
VGS=-3.5V
-ID(A)
-ID (A)
VDS=-5V
-4.5V
10
-3V
6
125°C
4
-2.5V
5
2
-2V
0
0
0
1
2
3
4
5
0
0.5
250
1.5
2
2.5
3
3.5
4
1.6
Normalized On-Resistance
225
VGS=-2.5V
200
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
175
150
VGS=-4.5V
125
100
VGS=-10V
75
VGS=-4.5V, VGS=-10V
1.4
VGS=-2.5V
1.2
ID=-2A
1
50
0
1
2
3
4
5
0.8
6
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
350
1.0E+01
300
1.0E+00
ID=-2A
200
125°C
150
100
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E-01
-IS (A)
RDS(ON) (mΩ)
250
25
50
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
175
1.0E-05
50
1.0E-06
0
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO6701
MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
5
VDS=-15V
ID=-2.0A
500
Capacitance (pF)
-VGS (Volts)
4
3
2
400
Ciss
300
200
1
Coss
100
0
0
1
2
3
4
5
Crss
0
6
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
20
10µs
10.0
1ms
0.1s
10ms
1.0
T J(Max)=150°C
T A=25°C
15
100µs
RDS(ON)
limited
Power (W)
-ID (Amps)
T J(Max)=150°C
T A=25°C
10
5
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
-VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=110°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
T on
0.01
0.00001
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO6701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
100
1.0E+01
125°C
f = 1MHz
80
Capacitance (pF)
IF (Amps)
1.0E+00
1.0E-01
1.0E-02
60
40
20
25°C
1.0E-03
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
10
15
20
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.5
Leakage Current (A)
1.0E-02
0.4
VF (Volts)
5
IF=0.5A
0.3
0.2
1.0E-03
VR=16V
1.0E-04
1.0E-05
1.0E-06
0.1
0
25
50
75
100
Temperature (°C)
125
0
150
25
50
75
100
125
150
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=135°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000