AO6701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO6701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6701 is Pb-free (meets ROHS & Sony 259 specifications). AO6701L is a Green Product ordering option. AO6701 and AO6701L are electrically identical. VDS (V) = -30V ID = -2.3A (VGS = -10V) RDS(ON) < 135mΩ (VGS = -10V) RDS(ON) < 185mΩ (VGS = -4.5V) RDS(ON) < 265mΩ (VGS = -2.5V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<[email protected] A S G 1 6 2 5 3 4 K N/C D D K S A G TSOP6 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C IDM B TA=25°C Continuous Forward Current A TA=70°C TA=25°C Power Dissipation TA=70°C ±12 -2.3 V -1.8 A -15 IF Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V IFM B Schottky -30 VKA Schottky reverse voltage Pulsed Forward Current ID MOSFET 20 2 V 1 A 1.15 10 0.92 0.7 0.59 -55 to 150 -55 to 150 °C Typ 78 106 64 Max 110 150 80 Units 109.4 136.5 58.5 135 175 80 W °C/W °C/W AO6701 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=-250µA -0.6 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 ±100 VGS=-10V, ID=-2.3A VGS=-4.5V, ID=-2A 135 185 mΩ VGS=-2.5V, ID=-1A 195 265 mΩ VDS=-5V, ID=-2.3A 8 VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V A 135 Forward Transconductance Rg -1.4 nA 190 gFS Crss -1 µA 107 Static Drain-Source On-Resistance Output Capacitance Units 154 TJ=125°C RDS(ON) Coss Max V VDS=-24V, VGS=0V VGS(th) IS Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-2.0A -0.85 mΩ S -1 V -1.35 A 409 pF 55 pF 42 pF 12 Ω 4.9 nC 0.6 nC Qgd Gate Drain Charge 1.6 nC tD(on) Turn-On DelayTime 6.9 ns tr Turn-On Rise Time 3.3 ns tD(off) Turn-Off DelayTime 38.5 ns tf trr Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=7.5Ω, RGEN=3Ω 13.2 ns IF=-2.0A, dI/dt=100A/µs 15 Qrr Body Diode Reverse Recovery Charge IF=-2.0A, dI/dt=100A/µs SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=0.5A 8 ns nC Body Diode Reverse Recovery Time Irm Maximum reverse leakage current CT Junction Capacitance trr Qrr SchottkyReverse Recovery Time Schottky Reverse Recovery Charge 0.39 VR=16V VR=16V, TJ=125°C VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs 0.5 0.1 20 34 5.2 0.8 V mA pF 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO6701 MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -5V -10V 15 8 25°C -4V VGS=-3.5V -ID(A) -ID (A) VDS=-5V -4.5V 10 -3V 6 125°C 4 -2.5V 5 2 -2V 0 0 0 1 2 3 4 5 0 0.5 250 1.5 2 2.5 3 3.5 4 1.6 Normalized On-Resistance 225 VGS=-2.5V 200 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 175 150 VGS=-4.5V 125 100 VGS=-10V 75 VGS=-4.5V, VGS=-10V 1.4 VGS=-2.5V 1.2 ID=-2A 1 50 0 1 2 3 4 5 0.8 6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 350 1.0E+01 300 1.0E+00 ID=-2A 200 125°C 150 100 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E-01 -IS (A) RDS(ON) (mΩ) 250 25 50 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 175 1.0E-05 50 1.0E-06 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6701 MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=-15V ID=-2.0A 500 Capacitance (pF) -VGS (Volts) 4 3 2 400 Ciss 300 200 1 Coss 100 0 0 1 2 3 4 5 Crss 0 6 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 20 10µs 10.0 1ms 0.1s 10ms 1.0 T J(Max)=150°C T A=25°C 15 100µs RDS(ON) limited Power (W) -ID (Amps) T J(Max)=150°C T A=25°C 10 5 1s 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=110°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO6701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 100 1.0E+01 125°C f = 1MHz 80 Capacitance (pF) IF (Amps) 1.0E+00 1.0E-01 1.0E-02 60 40 20 25°C 1.0E-03 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.5 Leakage Current (A) 1.0E-02 0.4 VF (Volts) 5 IF=0.5A 0.3 0.2 1.0E-03 VR=16V 1.0E-04 1.0E-05 1.0E-06 0.1 0 25 50 75 100 Temperature (°C) 125 0 150 25 50 75 100 125 150 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=135°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000