AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4900A is Pbfree (meets ROHS & Sony 259 specifications). AO4900AL is a Green Product ordering option. AO4900A and AO4900AL are electrically identical. VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D2 S2/A G2 S1 G1 8 7 6 5 1 2 3 4 D2/K D2/K D1 D1 K A G2 SOIC-8 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain CurrentA Pulsed Drain Current TA=70°C B TA=25°C A Continuous Forward Current TA=70°C B G1 S1 MOSFET TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Thermal Characteristics Schottky Steady-State Steady-State t ≤ 10s A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V ±12 6.9 V 5.8 A 40 IF PD Schottky 30 IFM TA=25°C Maximum Junction-to-Lead ID IDM VKA Schottky reverse voltage Pulsed Forward Current D1 30 3 V 2 A 2 40 2 1.44 1.44 -55 to 150 -55 to 150 °C Typ Max Units 55 62.5 90 40 110 48 47.5 62.5 71 32 110 40 W °C/W °C/W AO4900A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 30 VDS=24V, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 VGS=10V, ID=6.9A Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge nA 1.5 V A VGS=4.5V, ID=6A 23 32 mΩ VGS=2.5V, ID=5A 34 50 mΩ VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 100 40 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance 1 µA 27 Forward Transconductance Crss V 25 VSD Coss 1 20 TJ=125°C gFS IS 0.002 Units 5 VGS(th) Static Drain-Source On-Resistance Max TJ=55°C IGSS RDS(ON) Typ 10 26 0.71 900 VGS=0V, VDS=15V, f=1MHz mΩ S 1 V 4.5 A 1100 pF 88 pF 65 pF VGS=0V, VDS=0V, f=1MHz 0.95 1.5 Ω 10 12 nC VGS=4.5V, VDS=15V, ID=8.5A 1.8 nC Qgd Gate Drain Charge 3.75 nC tD(on) Turn-On DelayTime 3.2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr VGS=10V, VDS=15V, RL=1.8Ω, RGEN=6Ω 3.5 ns 21.5 ns IF=5A, dI/dt=100A/µs 16.8 20 8 12 ns nC 0.45 0.5 V VR=30V VR=30V, TJ=125°C 0.007 0.05 3.2 10 VR=30V, TJ=150°C 12 37 20 2.7 Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A Irm CT Maximum reverse leakage current Junction Capacitance VR=15V ns mA pF A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0 : Feb 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4900A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 20 10V 50 40 3V 12 ID(A) ID (A) VDS=5V 16 4.5V 30 2.5V 125°C 8 20 25°C 4 VGS=2V 10 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 60 RDS(ON) (mΩ) Normalized On-Resistance 1.7 50 VGS=2.5V 40 30 VGS=4.5V 20 VGS=10V 10 VGS=4.5V 1.5 VGS=10V 1.3 VGS=2.5V 1.1 VGS=2.5V 0.9 0.7 VGS=4.5 0.5 0 5 10 15 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 1.0E+01 90 1.0E+00 80 70 -25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 ID=6.9A 1.0E-01 125°C 60 IS (A) RDS(ON) (mΩ) VGS=10V 50 125°C 1.0E-02 1.0E-03 40 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 1.0E-04 MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN 25°C LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 30 1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 20 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. VSD (Volts) Figure 6: Body-Diode Characteristics AO4900A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=15V ID=6.9A 1200 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1000 800 600 400 Crss 1 Coss 200 0 0 0 2 4 6 8 10 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Power (W) 1ms 10s 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 30 30 20 0 1s 0.1 25 10 10ms DC 20 T J(Max)=150°C T A=25°C 40 10µs 1.0 15 50 T J(Max)=150°C T A=25°C RDS(ON) limited 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 5 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT OR USES AS CRITICAL D 0.1 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.PAPPLICATIONS COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING T onIMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4900A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 250 10 f = 1MHz Capacitance (pF) 125°C IF (Amps) 1 0.1 200 150 100 0.01 25°C 0 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 5 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics VF (Volts) Figure 12: Schottky Forward Characteristics 0.7 100 0.6 IF=3A Leakage Current (mA) VF (Volts) 50 0.5 0.4 IF=1A 0.3 0.2 10 1 VR=30V 0.1 0.01 0.001 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature ZθJA Normalized Transient Thermal Resistance 10 1 D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 T on Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000