AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AON2701 and AON2701L are electrically identical. -RoHS Compliant -Halogen Free* VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 2A, VF<0.45V@1A DFN 2x2 Package A NC K D D A S K D G K G Bottom Top S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage V Gate-Source Voltage GS TA=25°C TA=70°C Continuous Drain CurrentA B IDM VKA Pulsed Drain Current Schottky reverse voltage TA=25°C TA=70°C A Continuous Forward Current Pulsed Forward Current ID B MOSFET -20 ±8 -3 -2.3 Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA A Steady-State A t ≤ 10s A Steady-State Maximum Junction-to-Ambient Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Alpha & Omega Semiconductor, Ltd. TJ, TSTG Symbol RθJA RθJA A 20 2.5 1.5 IF PD Units V V -15 IFM TA=25°C TA=70°C Schottky V A 1.5 15 1.45 0.95 0.92 -55 to 150 -55 to 150 °C Typ Max Units 35 45 65 85 36 47 67 87 W °C/W °C/W www.aosmd.com AON2701 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C -5 ±100 IGSS Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 120 135 170 VGS=-2.5V, I D=-2.6A 128 160 mΩ VGS=-1.8V, I D=-1.5A 160 200 mΩ -1 V -1.1 A 700 pF TJ=125°C VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-3A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge -0.76 pF 63 pF VGS=0V, VDS=0V, f=1MHz 9.5 13 Ω 5 6.5 nC VGS=-4.5V, VDS=-10V, I D=-3A 1.2 nC 1 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/µs 21 Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 9.1 IF=1A 0.4 VGS=-4.5V, VDS=-10V, RL=1.5Ω, RGEN=3Ω Irm Maximum reverse leakage current VR=5V VR=5V, TJ=125°C Irm Maximum reverse leakage current VR=16V VR=16V, TJ=125°C CT Junction Capacitance Qrr S 90 Gate Drain Charge trr mΩ 6 540 VGS=0V, VDS=-10V, f=1MHz V A Qgd SCHOTTKY PARAMETERS VF Forward Voltage Drop nA 100 Forward Transconductance Coss µΑ -1 gFS IS Units -0.5 VGS=-4.5V, I D=-3A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V VGS(th) RDS(ON) Typ 5 ns 40 ns 28.5 ns 46 ns 28 ns nC 0.45 V 0.05 10 0.1 20 34 Schottky Reverse Recovery Time VR=10V IF=1A, dI/dt=100A/µs Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs 0.8 11 mA mA pF 14 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 7111 (Oct 15 2007). Rev5: March, 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON2701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: MOSFET 15 15 VDS=-5V -4.5V -3.0V 12 25°C -2.5V 9 -ID(A) -ID (A) 12 -2.0V 6 3 9 125°C 6 3 VGS=-1.5V 0 0 0 1 2 3 4 0 1 -VDS (Volts) Figure 1: On-Region Characteristics 280 3 4 Normalized On-Resistance 1.5 240 RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics VGS=-1.8V 200 VGS=-2.5V 160 120 VGS=-4.5V 80 VGS=-1.8V ID=-1.5A VGS=-2.5V ID=-2.6A 1.3 VGS=-4.5V ID=-3A 1.1 0.9 0.7 0 2 4 6 8 10 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 320 ID=-3A 280 1E+00 240 1E-01 -IS (A) RDS(ON) (mΩ) 12 200 125°C 160 120 125°C 1E-02 25°C 1E-03 1E-04 25°C 80 1E-05 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON2701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: MOSFET 5 700 3 2 Ciss 600 Capacitance (pF) 4 -VGS (Volts) 800 VDS=-10V ID=-3A 500 400 300 Crss Coss 200 1 100 0 0 0 1 2 3 4 5 0 6 ID (Amps) 10.00 100µ 1.00 1ms RDS(ON) limited DC 10ms 0.1s 10s 1 10 100 ZθJA Normalized Transient Thermal Resistance 1 100 0.01 1 100 10000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to -15 Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=85°C/W TJ(Max)=150°C TA=25°C 1 0.000001 0.0001 VDS (Volts) 10 20 10 0.01 0.1 15 1000 10µs 0.10 10 10000 TJ(Max)=150°C TA=25°C Power (W) 100.00 5 -VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON2701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 200 160 125°C Capacitance (pF) IF (Amps) 1 0.1 25°C 0.01 120 80 40 0 0.001 0 0.2 0.4 0.6 0.8 1 0 1.2 Leakage Current (mA) 0.39 IF=1A 0.36 VF (Volts) 10 15 20 10 0.42 0.33 IF=0.5A 0.30 0.27 0.24 1 VKA=20V VKA=16V 0.1 0.01 0 25 50 75 100 125 150 0 Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZθJA Normalized Transient Thermal Resistance 5 VKA (Volts) Figure 13: Schottky Capacitance Characteristics VF (V) Figure 12: Schottky Forward Characteristics 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=87°C/W -15 25 50 75 100 125 Temperature (°C) Figure 15: Schottky Leakage Current vs. Junction Temperature 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 0.01 PD Ton 0.001 T Single Pulse 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON2701 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge R esistive S witching Test C ircuit & W aveform s RL Vds t off t on td(on) Vgs - DU T V gs t d(off) tr 90% Vdd VDC tf + Rg Vgs 10% V ds D iod e R ecovery Test C ircuit & W aveform s Q rr = - Vds + Idt DU T Vgs V ds Isd L V gs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I R M V dd V DC - -I F -V ds www.aosmd.com