AOSMD AON4705L

AON4705L
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AON4705L uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for buck converter applications.
VDS (V) = -20V
ID = -4A (VGS = -4.5V)
RDS(ON) < 65mΩ (VGS = -4.5V)
RDS(ON) < 85mΩ (VGS = -2.5V)
RDS(ON) < 110mΩ (VGS = -1.8V)
SCHOTTKY
VKA (V) = 20V, IF = 1A, VF<0.5V @ 1A
-RoHS Compliant
-Halogen Free
DFN 3x2
Top View
Bottom
Pin 1
A
A
S
G
1
2
3
4
8
7
6
5
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain Current A
Pulsed Drain Current
TA=70°C
B
IDM
TA=25°C
TA=70°C
Pulsed Forward Current B
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Thermal Characteristics Schottky
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
MOSFET
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
A
Schottky
Units
V
±8
-4
V
-3.2
A
-15
IF
PD
S
-20
IFM
TA=25°C
K
G
VKA
Schottky reverse voltage
Continuous Forward Current A
ID
K
K
D
D
D
20
1.9
V
1.2
A
1.7
7
0.96
1.1
0.62
-55 to 150
-55 to 150
°C
Typ
51
88
28
Max
75
110
35
Units
66
95
40
80
130
50
W
°C/W
°C/W
AON4705L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
-5
Gate-Body leakage current
VDS=0V, VGS=±8V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-15
VGS=-4.5V, ID=-4A
TJ=125°C
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
Maximum reverse leakage current
CT
Junction Capacitance
trr
Qrr
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
A
64
mΩ
110
mΩ
-1
V
-2
A
VDS=-5V, ID=-4A
12
-0.7
560
VGS=0V, VDS=-10V, f=1MHz
S
745
80
VGS=-4.5V, VDS=-10V, ID=-4A
VGS=-4.5V, VDS=-10V, RL=2.5Ω,
RGEN=3Ω
pF
15
23
Ω
8.5
11
nC
1.2
nC
2.1
nC
7.2
ns
36
ns
53
ns
56
ns
37
49
ns
nC
0.5
V
27
0.4
VR=16V
VR=16V, TJ=125°C
VR=10V
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
pF
pF
70
VGS=0V, VDS=0V, f=1MHz
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1A
Irm
65
83
IF=-4A, dI/dt=100A/µs
trr
51
VGS=-1.8V, ID=-3A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
V
mΩ
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Crss
nA
-1
85
Forward Transconductance
Output Capacitance
±100
-0.66
65
gFS
Coss
µA
VGS=-2.5V, ID=-3.5A
VSD
IS
Units
-1
TJ=55°C
VGS(th)
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IGSS
RDS(ON)
Typ
0.2
20
44
11
2.5
mA
pF
14
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C.
The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 0. Aug 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4705L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
25
-3.0V
-4.5V
15
16
12
-2.0V
-ID(A)
-ID (A)
VDS=-5V
-2.5V
20
8
10
125°C
VGS=-1.5V
5
4
25°C
0
0
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics
5
0
90
Normalized On-Resistance
RDS(ON) (mΩ)
0.5
1
1.5
2
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
3
1.4
80
VGS=-2.5V
70
VGS=-4.5V
60
50
40
1.3
VGS=-1.8V
ID=-3A
VGS=-2.5V
ID=-3.5A
1.2
VGS=-4.5V
ID=-4A
1.1
1
0.9
0
2
4
6
8
10
0
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
180
1E+02
ID=-4A
1E+01
140
1E+00
125°C
1E-01
100
-IS (A)
RDS(ON) (mΩ)
165
125°
25°C
1E-02
1E-03
60
1E-04
1E-05
25°C
20
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
www.aosmd.com
AON4705L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=-10V
ID=-4A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
800
Ciss
600
400
Crss
1
Coss
200
0
165
0
0
2
4
6
8
10
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
15
10µs
1ms
0.1s
10ms
1s
DC
0
0.001
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
10
10
5
0.1
0.1
20
TJ(Max)=150°C
TA=25°C
100µs
RDS(ON)
limited
1.0
15
20
TJ(Max)=150°C
TA=25°C
10.0
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
100.0
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4705L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
100
1.0E+01
125°C
f = 1MHz
80
Capacitance (pF)
IF (Amps)
1.0E+00
1.0E-01
1.0E-02
60
40
20
25°C
1.0E-03
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
10
15
20
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.5
Leakage Current (A)
1.0E-02
0.4
VF (Volts)
5
IF=0.5A
0.3
0.2
0.1
1.0E-03
VR=16V
1.0E-04
1.0E-05
1.0E-06
0
25
50
75
100
Temperature (°C)
125
0
150
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=80°C/W
50
75
100
125
150
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
25
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4705L
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
+
VDC
Qgs
Vds
Qgd
+
DUT
-
VDC
-10V
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vgs
DUT
Vgs
VDC
-
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
t off
t on
Vgs
10%
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt
-I RM
-Vds
Vdd
www.aosmd.com