AON4705L P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON4705L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for buck converter applications. VDS (V) = -20V ID = -4A (VGS = -4.5V) RDS(ON) < 65mΩ (VGS = -4.5V) RDS(ON) < 85mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 1A, VF<0.5V @ 1A -RoHS Compliant -Halogen Free DFN 3x2 Top View Bottom Pin 1 A A S G 1 2 3 4 8 7 6 5 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B IDM TA=25°C TA=70°C Pulsed Forward Current B Power Dissipation TA=70°C Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. MOSFET TJ, TSTG Symbol RθJA RθJL RθJA RθJL A Schottky Units V ±8 -4 V -3.2 A -15 IF PD S -20 IFM TA=25°C K G VKA Schottky reverse voltage Continuous Forward Current A ID K K D D D 20 1.9 V 1.2 A 1.7 7 0.96 1.1 0.62 -55 to 150 -55 to 150 °C Typ 51 88 28 Max 75 110 35 Units 66 95 40 80 130 50 W °C/W °C/W AON4705L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -5 Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 VGS=-4.5V, ID=-4A TJ=125°C Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Maximum reverse leakage current CT Junction Capacitance trr Qrr Schottky Reverse Recovery Time Schottky Reverse Recovery Charge A 64 mΩ 110 mΩ -1 V -2 A VDS=-5V, ID=-4A 12 -0.7 560 VGS=0V, VDS=-10V, f=1MHz S 745 80 VGS=-4.5V, VDS=-10V, ID=-4A VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω pF 15 23 Ω 8.5 11 nC 1.2 nC 2.1 nC 7.2 ns 36 ns 53 ns 56 ns 37 49 ns nC 0.5 V 27 0.4 VR=16V VR=16V, TJ=125°C VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs pF pF 70 VGS=0V, VDS=0V, f=1MHz Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1A Irm 65 83 IF=-4A, dI/dt=100A/µs trr 51 VGS=-1.8V, ID=-3A DYNAMIC PARAMETERS Ciss Input Capacitance Rg V mΩ Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Crss nA -1 85 Forward Transconductance Output Capacitance ±100 -0.66 65 gFS Coss µA VGS=-2.5V, ID=-3.5A VSD IS Units -1 TJ=55°C VGS(th) Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ 0.2 20 44 11 2.5 mA pF 14 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 0. Aug 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4705L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 25 -3.0V -4.5V 15 16 12 -2.0V -ID(A) -ID (A) VDS=-5V -2.5V 20 8 10 125°C VGS=-1.5V 5 4 25°C 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 90 Normalized On-Resistance RDS(ON) (mΩ) 0.5 1 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 3 1.4 80 VGS=-2.5V 70 VGS=-4.5V 60 50 40 1.3 VGS=-1.8V ID=-3A VGS=-2.5V ID=-3.5A 1.2 VGS=-4.5V ID=-4A 1.1 1 0.9 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 180 1E+02 ID=-4A 1E+01 140 1E+00 125°C 1E-01 100 -IS (A) RDS(ON) (mΩ) 165 125° 25°C 1E-02 1E-03 60 1E-04 1E-05 25°C 20 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON4705L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-10V ID=-4A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 800 Ciss 600 400 Crss 1 Coss 200 0 165 0 0 2 4 6 8 10 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 15 10µs 1ms 0.1s 10ms 1s DC 0 0.001 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) 10 10 5 0.1 0.1 20 TJ(Max)=150°C TA=25°C 100µs RDS(ON) limited 1.0 15 20 TJ(Max)=150°C TA=25°C 10.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4705L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 100 1.0E+01 125°C f = 1MHz 80 Capacitance (pF) IF (Amps) 1.0E+00 1.0E-01 1.0E-02 60 40 20 25°C 1.0E-03 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.5 Leakage Current (A) 1.0E-02 0.4 VF (Volts) 5 IF=0.5A 0.3 0.2 0.1 1.0E-03 VR=16V 1.0E-04 1.0E-05 1.0E-06 0 25 50 75 100 Temperature (°C) 125 0 150 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=80°C/W 50 75 100 125 150 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature 10 25 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4705L Gate Charge Test Circuit & Waveform Vgs Qg - + VDC Qgs Vds Qgd + DUT - VDC -10V Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vgs DUT Vgs VDC - td(on) t d(off) tr tf 90% Vdd + Rg t off t on Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd VDC - -I F t rr dI/dt -I RM -Vds Vdd www.aosmd.com