AO3705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO3705/L uses advanced trench technology to provide excellent R DS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for buck convertor applications. AO3705 and AO3705L are electrically identical. -RoHs Complaint -AO3705L is Halogen Free VDS (V) = -20V ID = -3.2A (V GS = -4.5V) RDS(ON) < 70mΩ (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.45V@1A SOT-23-5 D K S A Top View G S A 1 2 3 5 D 4 K G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current A TA=70°C B IDM VKA Schottky reverse voltage TA=25°C Continuous Forward Current Pulsed Forward Current ID A TA=70°C B Schottky TA=70°C Power Dissipation V ±8 -3.2 V -2.5 A -25 IF Parameter: Thermal Characteristics MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Symbol t ≤ 10s Steady-State Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Steady-State Alpha Omega Semiconductor, Ltd. Steady-State RθJA RθJL RθJA RθJL 20 1 V 0.5 A 1.15 10 0.66 0.7 0.42 TJ, TSTG Junction and Storage Temperature Range A PD Units -20 IFM TA=25°C Maximum Junction-to-Ambient MOSFET -55 to 150 Typ W °C Max 80.3 110 117 43 150 80 153 190 173 103 220 140 Units °C/W °C/W www.aosmd.com AO3705 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 TJ=125°C Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V 56 70 80 100 A mΩ mΩ 90 VGS=-1.8V, ID=-2A mΩ 130 mΩ -1 V -1.2 A 745 pF VGS=-1.5V, ID=-0.5A 100 VDS=-5V, ID=-3.2A 15 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance nA -1 110 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Crss ±100 -0.65 85 VSD Output Capacitance µA 70 Forward Transconductance Coss -5 VGS=-2.5V, ID=-2.8A gFS IS Units V TJ=55°C VGS=-4.5V, ID=-3.2A Static Drain-Source On-Resistance Max -1 VDS=-20V, VGS=0V IDSS RDS(ON) Typ -0.7 560 VGS=0V, VDS=-10V, f=1MHz S 80 pF 70 VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-3.2A pF 15 23 Ω 8.5 11 nC 1.2 nC nC Qgd Gate Drain Charge 2.1 tD(on) Turn-On DelayTime 7.2 ns tr Turn-On Rise Time 36 ns tD(off) Turn-Off DelayTime 53 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time VGS=-4.5V, VDS=-10V, RL=3Ω, RGEN=6Ω 56 IF=-3.2A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/µs SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1A 27 Irm Maximum reverse leakage current CT Junction Capacitance trr Qrr Schottky Reverse Recovery Time Schottky Reverse Recovery Charge 0.4 VR=16V VR=16V, TJ=125°C VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs ns 49 nC 0.45 0.1 20 44 11 2.5 ns V mA pF 14 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev1: May 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. www.aosmd.com AO3435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 -4.5V -2.5V 20 15 15 -ID(A) -ID (A) VDS=-5V -3.0V -2.0V 10 10 5 VGS=-1.5V 5 125°C 0 0 1 2 3 4 5 0 1 1.5 2 2.5 3 1.6 150 Normalized On-Resistance VGS=-1.5V 130 RDS(ON) (mΩ) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics VGS=-1.8V 110 90 VGS=-2.5V 70 VGS=-4.5V 50 VGS=2.5V 1.4 VGS=-4.5V ID=-3.5A 1.2 VGS=-1.5V ID=-0.5A 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 180 ID=-3.2A 160 1E+01 12 140 1E+00 120 1E-01 100 -IS (A) RDS(ON) (mΩ) 25°C 0 125°C 80 125°C 1E-02 25°C 1E-03 60 1E-04 25°C 40 1E-05 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1200 Capacitance (pF) 4 -VGS (Volts) 1400 VDS=-10V ID=-3.2A 3 2 1000 800 Ciss 600 400 1 Coss 200 0 Crss 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100 100µ Power (W) -ID (Amps) 20 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 1ms 10ms 0.1s 0.10 DC TJ(Max)=150°C TA=25°C 0.1 1 10 0.1 0.00001 100 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=150°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 1 1s -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 15 1000 1.00 0.01 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 10.00 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 100 1000 AO3705 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 200 160 125°C Capacitance (pF) IF (Amps) 1 0.1 25°C 0.01 120 80 40 0.001 0 0 0.2 0.4 0.6 0.8 1 1.2 0 VF (V) Figure 12: Schottky Forward Characteristics 5 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 10 0.42 Leakage Current (mA) 0.39 IF=1A VF (Volts) 0.36 0.33 IF=0.5A 0.30 0.27 0.24 0 25 50 75 100 125 1 VKA=20V VKA=16V 0.1 0.01 150 0 Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature -15 25 50 75 100 125 Temperature (°C) Figure 15: Schottky Leakage Current vs. Junction Temperature 150 ZθJA Normalized Transient Thermal Resistance 10.000 1.000 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=220°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.100 PD 0.010 Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 1000 10000