SEMICONDUCTOR KMB7D0DN40QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. H T P D L G FEATURES A VDSS=40V, ID=7A. Drain-Source ON Resistance. RDS(ON)=25m (Max.) @VGS=10V RDS(ON)=45m (Max.) @VGS=4.5V 8 5 B1 B2 Super High Dense Cell Design 1 High Power and Current Handing Capability Maximum Ratings (Ta=25 4 DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS 40 V Gate Source Voltage VGSS DC 25 V ID * 7 A IDP 22 A IS 1.7 A 2 W 1.44 W FLP-8 Drain Current Pulsed (note1) Drain Source Diode Forward Current 25 PD * Drain Power Dissipation 100 Tj -55~150 Tstg -55~150 RthJA* 62.5 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient /W D1 PIN CONNECTION (TOP VIEW) S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D1 G2 G1 S1 N-Channel MOSFET 2007. 4. 3 Revision No : 0 S2 D2 D2 P-Channel MOSFET 1/4 KMB7D0DN40QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) UNLESS OTHERWISE NOTED SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS ID=250 A, VGS=0V 40 - - V Drain Cut-off Current IDSS VDS=32V, VGS=0V - - 1 A Gate Leakage Current IGSS VGS= - - 100 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 1.8 2.5 VGS=10.0V, ID=6A - 20 25 VGS=4.5V, ID=5A - 35 45 VDS=5V, VGS=10A 15 - - A - 8 - S - 947 1231 - 117 152 - 77 100 VDS=20V, VGS=10V, ID=6A - 18.2 24 VDS=20V, VGS=4.5V, ID=6A - 8.7 12 - 2.8 4 Drain-Source Breakdown Voltage 25V, VDS=0V RDS(ON) Drain-Source ON Resistance ID(ON) On-State Drain Current Gfs Forward Transconductance VDS=5V, ID=6A V m Dynamic (Note 3) Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS=25V, f=1MHz, VGS=OV pF nC Gate-Source Charge Qgs Gate-Drain Charge Qgd - 3.3 5 Turn-On Delat Time td(on) - 16.7 19 Turn-On Rise Time tr VDD=20V, VGS=10V - 3.6 5 ID=1A, RG=3.3 - 28.7 38 - 10.1 14 - 0.78 1.2 VDS=20V, VGS=4.5V, ID=6A ns td(off) Turn-On Deley Time (Note 1) tr Turn-On Fall Time Source-Drain Diode Ratings VSDF Source-Drain Forward Voltage IDR=1.7A, VGS=0V V Noter 1. Pulse Test : Pulse width 10 , Duty cycle 1% Upper electrical characteristics can be changed because these are tentative specifications. Graphs are omitted because these are tentative specifications. 2007. 4. 3 Revision No : 0 2/4 KMB7D0DN40QA Fig2. RDS(on) - ID 20 Common Source Tc=25 C Pulse Test Drain Current ID (A) VGS=10,5,4.5V 4.0V 16 12 8 3.5V 4 VGS=3.0V 0 0 2 4 6 8 10 Drain Source On Resistance RDS(ON) (Ω) Fig1. ID - VDS 0.2 Common Source Tc=25 C Pulse Test 0.16 0.12 0.08 4.5V 0.04 VGS=10.0V 0 0 4 Drain - Source Voltage VDS (V) 8 200 Common Source VDS=10V Pulse Test 16 25 C 12 8 Tc=-55 C 125 C 4 0 Common Source VDS=10V Pulse Test 160 120 80 ID=6A 40 0 1 2 3 4 -80 5 Gate-Source Volatage VGS (V) -40 0 Reverse Drain Current IDR (A) Gate Threshold Voltage Vth (V) 10 VGS=VDS ID=250µA 4 Pulse Test 3 2 1 -40 80 0 40 80 120 Junction Temperature Tj ( C ) Revision No : 0 120 160 Fig6. IDR - VSDF 5 Common Source 0 -80 40 Junction Temperature Tj ( C ) Fig5. Vth - Tj 2007. 4. 3 20 Fig4. RDS(on) - Tj Normalized Drain Source On Resistance RDS(ON) (mΩ) Drain Current ID (A) 20 16 Drain - Current ID (A) Fig3. ID - VGS 24 12 160 Common Source Tc= 25 C Pulse Test 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Source - Drain Forward Voltage VSDF (V) 3/4 KMB7D0DN40QA Fig.7 Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig.8 Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS VGS 10% td(on) tr ton 2007. 4. 3 Revision No : 0 td(off) tf toff 4/4