KEC KMB7D0DN40QA

SEMICONDUCTOR
KMB7D0DN40QA
TECHNICAL DATA
Dual N-Ch Trench MOSFET
GENERAL DESCRIPTION
This planer stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
H
T
P
D
L
G
FEATURES
A
VDSS=40V, ID=7A.
Drain-Source ON Resistance.
RDS(ON)=25m
(Max.) @VGS=10V
RDS(ON)=45m
(Max.) @VGS=4.5V
8
5
B1 B2
Super High Dense Cell Design
1
High Power and Current Handing Capability
Maximum Ratings (Ta=25
4
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
_ 0.2
4.85 +
_ 0.2
3.94 +
_ 0.3
6.02 +
_ 0.1
0.4 +
0.15+0.1/-0.05
_ 0.2
1.63 +
_ 0.2
0.65 +
1.27
0.20+0.1/-0.05
Unless otherwise noted)
CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
VDSS
40
V
Gate Source Voltage
VGSS
DC
25
V
ID *
7
A
IDP
22
A
IS
1.7
A
2
W
1.44
W
FLP-8
Drain Current
Pulsed
(note1)
Drain Source Diode Forward Current
25
PD *
Drain Power Dissipation
100
Tj
-55~150
Tstg
-55~150
RthJA*
62.5
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
/W
D1
PIN CONNECTION (TOP VIEW)
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
D1
G2
G1
S1
N-Channel MOSFET
2007. 4. 3
Revision No : 0
S2
D2
D2
P-Channel MOSFET
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KMB7D0DN40QA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
) UNLESS OTHERWISE NOTED
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
BVDSS
ID=250 A, VGS=0V
40
-
-
V
Drain Cut-off Current
IDSS
VDS=32V, VGS=0V
-
-
1
A
Gate Leakage Current
IGSS
VGS=
-
-
100
A
Gate Threshold Voltage
Vth
VDS=VGS, ID=250 A
1
1.8
2.5
VGS=10.0V, ID=6A
-
20
25
VGS=4.5V, ID=5A
-
35
45
VDS=5V, VGS=10A
15
-
-
A
-
8
-
S
-
947
1231
-
117
152
-
77
100
VDS=20V, VGS=10V, ID=6A
-
18.2
24
VDS=20V, VGS=4.5V, ID=6A
-
8.7
12
-
2.8
4
Drain-Source Breakdown Voltage
25V, VDS=0V
RDS(ON)
Drain-Source ON Resistance
ID(ON)
On-State Drain Current
Gfs
Forward Transconductance
VDS=5V, ID=6A
V
m
Dynamic (Note 3)
Input Capaclitance
Ciss
Ouput Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VDS=25V, f=1MHz, VGS=OV
pF
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
3.3
5
Turn-On Delat Time
td(on)
-
16.7
19
Turn-On Rise Time
tr
VDD=20V, VGS=10V
-
3.6
5
ID=1A, RG=3.3
-
28.7
38
-
10.1
14
-
0.78
1.2
VDS=20V, VGS=4.5V, ID=6A
ns
td(off)
Turn-On Deley Time
(Note 1)
tr
Turn-On Fall Time
Source-Drain Diode Ratings
VSDF
Source-Drain Forward Voltage
IDR=1.7A, VGS=0V
V
Noter
1. Pulse Test : Pulse width
10
, Duty cycle
1%
Upper electrical characteristics can be changed because these are tentative specifications.
Graphs are omitted because these are tentative specifications.
2007. 4. 3
Revision No : 0
2/4
KMB7D0DN40QA
Fig2. RDS(on) - ID
20
Common Source
Tc=25 C
Pulse Test
Drain Current ID (A)
VGS=10,5,4.5V
4.0V
16
12
8
3.5V
4
VGS=3.0V
0
0
2
4
6
8
10
Drain Source On Resistance RDS(ON) (Ω)
Fig1. ID - VDS
0.2
Common Source
Tc=25 C
Pulse Test
0.16
0.12
0.08
4.5V
0.04
VGS=10.0V
0
0
4
Drain - Source Voltage VDS (V)
8
200
Common Source
VDS=10V
Pulse Test
16
25 C
12
8
Tc=-55 C
125 C
4
0
Common Source
VDS=10V
Pulse Test
160
120
80
ID=6A
40
0
1
2
3
4
-80
5
Gate-Source Volatage VGS (V)
-40
0
Reverse Drain Current IDR (A)
Gate Threshold Voltage Vth (V)
10
VGS=VDS
ID=250µA
4 Pulse
Test
3
2
1
-40
80
0
40
80
120
Junction Temperature Tj ( C )
Revision No : 0
120
160
Fig6. IDR - VSDF
5 Common Source
0
-80
40
Junction Temperature Tj ( C )
Fig5. Vth - Tj
2007. 4. 3
20
Fig4. RDS(on) - Tj
Normalized Drain Source On
Resistance RDS(ON) (mΩ)
Drain Current ID (A)
20
16
Drain - Current ID (A)
Fig3. ID - VGS
24
12
160
Common Source
Tc= 25 C
Pulse Test
8
6
4
2
0
0
0.4
0.8
1.2
1.6
2.0
Source - Drain Forward Voltage VSDF (V)
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KMB7D0DN40QA
Fig.7 Gate Charge Circuit and Wave Form
VGS
10 V
Schottky
Diode
ID
0.5
VDSS
ID
1.0 mA
Q
VDS
Qgd
Qgs
Qg
VGS
Fig.8 Resistive Load Switching
RL
VDS
90%
0.5 VDSS
6Ω
VDS
10 V
VGS
VGS
10%
td(on)
tr
ton
2007. 4. 3
Revision No : 0
td(off)
tf
toff
4/4