SEMICONDUCTOR KMB3D5PS30QA TECHNICAL DATA SBD and P-Ch Trench MOSFET GENERAL DESCRIPTION It is particularly suited for switching such as DC/DC Converters. It is driven as low as 4.5V and fast switching, high efficiency. H T FEATURES P D L G VDSS=-30V, ID=-3.5A. Drain-Source ON Resistance. A RDS(ON)=85m (Max.) @ VGS=-10V RDS(ON)=180m (Max.) @ VGS=-4.5V 8 5 B1 B2 1 MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Unless otherwise noted) SYMBOL PATING UNIT Drain Source Voltage VDSS -30 V Gate Source Voltage VGSS 20 V DC ID * -3.5 A Pulsed IDP -20 A 1.4 W 1 W 25 PD * Drain Power Dissipation 100 Tj 150 Tstg -55~150 RthJA* 90 Maximum Junction Temperature Storage Temperature Range CHARACTERISTIC Repetitive Peak Reverse Voltage Marking Type Name /W Note : *Sorface Mounted on FR4 Board KMB3D5PS 30QA 702 Schottky Diode Maximum Ratings (Ta=25 Lot No. Unless otherwise noted) SYMBOL PATING UNIT VRRM 30 V IF 1.4 A Average Forward Current MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 FLP-8 Drain Current Thermal Resistance, Junction to Ambient 4 DIM A B1 B2 D G H L P T PIN CONNECTION (TOP VIEW) A 1 8 C 1 8 A 2 7 C 2 7 S 3 6 D 3 6 G 4 5 D 4 5 2007. 8. 13 Revision No : 2 1/5 KMB3D5PS30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) UNLESS OTHERWISE NOTED SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS ID=-250 A, VGS=0V -30 - - V Drain Cut-off Current IDSS VDS=-30V, VGS=0V - - -1 A Gate Leakage Current IGSS VGS= - - 100 Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -1.0 - -3.0 VGS=-10.0V, ID=-2.5A - 66 85.0 VGS=-4.5V, ID=-1.8A - 125 180.0 VDS=-10V, ID=-2.5A - 5.0 - - 550 - - 210 - Drain-Source Breakdown Voltage 20V, VDS=0V RDS(ON) Drain-Source ON Resistance Gfs Forward Transconductance nA V m S Dynamic (Note 3) Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 50 - Total Gate Charge Qg - 8.7 - Gate-Source Charge Qgs - 1.9 - Gate-Drain Charge Qgd - 1.3 - Turn-On Delat Time td(on) - 7 - Turn-On Rise Time tr VDD=-10V, VGS=-10V - 9 - ID=10 , RG=50 - 14 - - 8 - - - -1.2 V MIN. TYP. MAX. UNIT VDS=-10V, f=1MHz VDS=-10V, VGS=-10V, ID=-2.5A pF nC ns td(off) Turn-On Deley Time (Note 1) tr Turn-On Fall Time Source-Drain Diode Ratings VSDF Source-Drain Forward Voltage IDR=-1.7A, VGS=0V Note 1. Pulse Test : Pulse width 10 , Duty cycle 1% SHOTTKY DIODE ELECTRICAL CHARACTERISTICS CHARACTERISTIC SYMBOL TEST CONDITION Forward Voltage Drop VF IF=1.0A - 0.45 0.5 V Reverse Leakage Current IR VR=30V - 0.004 0.1 mA Junction Capactitance CT VR=10V - 62 - PF 2007. 8. 13 Revision No : 2 2/5 KMB3D5PS30QA Fig2. RDS(on) - ID 20 Drain Current ID (A) 10.0V Common Source Tc=25 C Pulse Test 3.5V 5.0V 4.5V 16 4.0V 12 8 VGS=3.0V 4 0 0 2 4 6 8 10 Drain Source On Resistance RDS(ON) (Ω) Fig1. ID - VGS 0.4 Common Source Tc=25 C Pulse Test 0.32 0.24 0.16 VGS=4.5V 0.08 VGS=10V 0 0 3 Drain - Source Voltage VGS (V) 25 C Drain Source On Resistance RDS(ON) (mΩ) Drain Current ID (A) 200 125 C Tc=-55 C 12 8 4 0 Common Source VDS=10V Pulse Test 160 ID=2.5A 120 80 40 0 1 2 3 4 -80 5 Gate-Source Volatage VGS (V) -40 0 3 2 1 0 40 80 120 Junction Temperature Tj ( C ) Revision No : 2 160 Reverse Source-Drain Current IDR (A) Gate Threshold Voltage Vth (V) VGS=VDS ID=250µA 4 Pulse Test -40 80 120 160 Fig6. IDR - VSDF 5 Common Source 0 -80 40 Junction Temperature Tj ( C ) Fig5. Vth - Tj 2007. 8. 13 12 Fig4. RDS(on) - Tj Common Source VDS=10V Pulse Test 16 9 Drain - Current ID (A) Fig3. ID - VGS 20 6 10 Common Source Tc= 25 C Pulse Test 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Source - Drain Forward Voltage VSDF (V) 3/5 KMB3D5PS30QA Fig7. Forward Voltage Drop Fig8. Safe Operation Area 102 10 8 Drain Current ID (A) Forward Current IF (A) Operation in this area is limited by RDS(ON) 6 4 2 Tj=25 C 0.4 1ms 0.8 1.2 10ms 100 100ms 1s 10s DC 10-1 Tj=-50 C VGS= 10V SINGLE PULSE 10-2 10-1 0 0 101 1.6 2.0 100 101 102 103 Drain - Source Voltage VDS (V) Forward Voltage Drop VF (V) Normalized Effective Transient Thermal Resistance Fig9. Transient Thermal Response Curve 100 Duty Cycle = 0.5 0.2 10-1 PDM 0.1 t1 t2 0.05 Duty Cycle D = t1/t2 0.02 Single Pluse 10-2 10-4 10-3 10-2 10-1 100 101 102 103 Square Wave Pulse Duration (sec) 2007. 8. 13 Revision No : 2 4/5 KMB3D5PS30QA Fig10. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig11. Resistive Load Switching RL VDS 90% 0.5 VDSS 50Ω VDS 10 V VGS VGS 10% td(on) tr ton 2007. 8. 13 Revision No : 2 td(off) tf toff 5/5