SEMICONDUCTOR KMB7D1DP30QA TECHNICAL DATA Dual P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. H T P D L G FEATURES VDSS=-30V, ID=-7.1A A Drain-Source ON Resistance RDS(ON)=25m (Max.) @ VGS=-10V 8 RDS(ON)=41m (Max.) @ VGS=-4.5V 5 Super Hige Dense Cell Design B1 B2 1 MAXIMUM RATING (Ta=25 SYMBOL N-Ch UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS FLP-8 V 22 -7.1 DC@TA=25 ID -5.7 DC@TA=70 Pulsed Drain-Source-Diode Forward Current IDP -40 IS -1.7 A A 1.1 TA=25 Drain Power Dissipation MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 ) CHARACTERISTIC Drain Current 4 DIM A B1 B2 D G H L P T PD W 0.7 TA=70 705 Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient RthJA 110 Maximum Junction Temperature KMB7D1DP 30QA /W Note : Surface Mounted on FR4 Board, t 10sec. PIN CONNECTION (TOP VIEW) S1 1 8 D1 1 8 G1 2 7 D1 2 7 S2 3 6 D2 3 6 G2 4 5 D2 4 5 2007. 4. 17 Revision No : 0 1/5 KMB7D1DP30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IDS=-10 A, VGS=0V, -30 - - V VGS=0V, VDS=-30V - - -1 VGS=0V, VDS=-30V, Tj=55 - - -25 Static Drain-Source Breakdown Voltage BVDSS IDSS Drain Cut-off Current A Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -1 - -3 V VGS=-10V, ID=-7.1A - 20 25 VGS=-4.5V, ID=-5.5A - 33 41 VDS=-10V, ID=-7.1A - 20 - - 1550 - - 420 - RDS(ON)* Drain-Source ON Resistance gfs* Forward Transconductance m S Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 380 - Total Gate Charge Qg* - 33 50 Gate-Source Charge Qgs* - 5.4 - Gate-Drain Charge Qgd* - 8.9 - Turn-On Delat Time td(on)* - 9 15 Turn-On Rise Time tr* VDD=-15V, VGS=-10V - 12 20 ID=-1A, RG=6 - 60 90 - 34 50 - -0.8 -1.2 VDS=15V, f=1MHz, VGS=OV VDS=-15V, VGS=-10V, ID=-7.1A pF nC ns td(off)* Turn-On Deley Time tr* Turn-On Fall Time Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage * : Pulse Test : Pulse width <300 2007. 4. 17 VGS=0V, IDR=-1.7A V , Duty cycle < 2% Revision No : 0 2/5 KMB7D1DP30QA Fig2. RDS(ON) - ID 10V 4.5V Drain Current ID (A) 4.0V 3.5V 3.0V 4 2.5V VGS=2.0V 0.4 Drain Source On Resistance RDS(ON) (Ω) Fig1. ID - VDS 200 Common Source Tc=25 C Pulse Test 100 VGS=4.5V VGS=10V 0 0 4 8 Fig3. ID - VGS 50 Normalized Drain-Source On-Resistance RDS(ON) (mΩ) Drain Current ID (A) VDS=5V Pulse Test 30 20 25 C 125 C -55 C 0 Common Source VDS=10V, ID=7A Pulse Test 40 30 20 10 0 0 1 2 3 4 -75 5 Gate-Source Volatage VGS (V) -50 -25 VGS=VDS I =250µA Drain Current ID (A) 3 2 1 -25 50 75 100 125 150 10 D 4 Pulse Test -50 25 Fig6. IS-VSDF 5 Common Source 0 -75 0 Junction Temperature Tj ( C ) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) 20 Fig4. RDS(on) - Tj 40 Common Source 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) 2007. 4. 17 16 Drain - Current ID (A) Drain - Source Voltage VDS (V) 10 12 Revision No : 0 8 6 4 2 0 0 0.2 0.6 1.0 1.4 1.8 Source - Drain Forward Voltage VSDF (V) 3/5 KMB7D1DP30QA Fig7. Transient Thermal Response Curve NORMALIZED EFFECTIVE TRANSIENT THER MAC RESISTANCE 1 0.5 0.2 0.1 0.05 0.02 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM SINGLE 0.005 t1 t2 0.002 - Duty = t/T 0.001 10-3 10-2 10-1 100 10 102 300 TIME t (sec) Fig8. Safe Operation Area 100 RDS(ON)LIMIT Drain Current ID (A) 100us 10 1ms 10ms 100ms 1s 10s DC 1 0.1 VGS= 10V SINGLE PULSE TA= 25 C 0.01 0.1 1 10 100 Drain - Source Voltage VDS (V) 2007. 4. 17 Revision No : 0 4/5 KMB7D1DP30QA Fig9. Gate Charge Circuit and Wave Form VGS -4.5V Schottky Diode ID ID 0.5 VDSS 1.0 mA VDS Q Qgs VGS Qgd Qg Fig10. Resistive Load Switching RL td(on) 0.5 VDSS VGS ton tr td(off) toff tf 10% 6Ω VDS -10 V VGS VDS 2007. 4. 17 Revision No : 0 90% 5/5