SEMICONDUCTOR KMB7D0N40QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in pc, portable equipment and battery powered systems. H T P D FEATURES L G A VDSS=40V, ID=7A. Drain-Source ON Resistance. RDS(ON)=25m (Max.) @VGS=10V RDS(ON)=45m (Max.) @VGS=4.5V 8 5 B1 B2 1 Super High Dense Cell Design 4 High Power and Current Handing Capability Maximum Ratings (Ta=25 SYMBOL PATING UNIT Drain Source Voltage VDSS 40 V Gate Source Voltage VGSS 7 A Pulsed IDP 22 A IS 1.7 A 2 W 1.44 W TA=25 PD * TA=100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note) *Surface Mounted on 1 V ID * Drain Source Diode Forward Current Drain Power Dissipation 25 DC Drain Current MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 FLP-8 Unless otherwise noted) CHARACTERISTIC DIM A B1 B2 D G H L P T Tj -55~150 Tstg -55~150 RthJA* 62.5 KMB7D0N 40QA /W 1 FR4 Board. PIN CONNECTION (TOP VIEW) S 1 8 D S 2 7 D S 3 6 D G 4 5 D 2008. 1. 25 1 8 2 7 3 6 4 5 Revision No : 0 1/4 KMB7D0N40QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) UNLESS OTHERWISE NOTED SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS ID=250 A, VGS=0V 40 - - V Drain Cut-off Current IDSS VDS=32V, VGS=0V - - 1 A Gate Leakage Current IGSS VGS= - - 100 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 1.8 2.5 VGS=10.0V, ID=6A - 20 25 VGS=4.5V, ID=5A - 35 45 VDS=5V, VGS=10V 15 - - A - 8 - S - 947 1231 - 117 152 - 77 100 VDS=20V, VGS=10V, ID=6A - 18.2 24 VDS=20V, VGS=4.5V, ID=6A - 8.7 12 - 2.8 4 - 3.3 5 - 16.7 19 VDD=20V, VGS=10V - 3.6 5 ID=1A, RG=3.3 - 28.7 38 - 10.1 14 - 0.78 1.2 Drain-Source Breakdown Voltage RDS(ON)* Drain-Source ON Resistance ID(ON)* On-State Drain Current gfs* Forward Transconductance 25V, VDS=0V VDS=5V, ID=6A V m Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg* Gate-Source Charge Qgs* Gate-Drain Charge Qgd* Turn-On Delat Time td(on)* Turn-On Rise Time tr* td(off)* Turn-On Deley Time VDS=25V, f=1MHz, VGS=OV nC VDS=20V, VGS=4.5V, ID=6A tf* Turn-On Fall Time pF ns Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage Note) *Pulse Test : Pulse width 2008. 1. 25 10 , Duty cycle Revision No : 0 IDR=1.7A, VGS=0V V 1% 2/4 KMB7D0N40QA Fig2. RDS(on) - ID 20 Common Source TA=25 C Pulse Test Drain Current ID (A) VGS=10,5,4.5V 4.0V 16 12 8 3.5V 4 VGS=3.0V 0 0 2 4 6 8 10 Drain Source On Resistance RDS(ON) (Ω) Fig1. ID - VDS 0.2 Common Source TA=25 C Pulse Test 0.16 0.12 0.08 4.5V 0.04 VGS=10.0V 0 0 4 Drain - Source Voltage VDS (V) 8 200 Common Source VDS=10V Pulse Test 16 25 C 12 8 Tc=-55 C 125 C 4 0 Common Source VDS=10V Pulse Test 160 120 80 ID=6A 40 0 1 2 3 4 -80 5 Gate-Source Volatage VGS (V) -40 0 Reverse Drain Current IDR (A) Gate Threshold Voltage Vth (V) 10 VGS=VDS ID=250µA 4 Pulse Test 3 2 1 -40 80 0 40 80 120 Junction Temperature Tj ( C) Revision No : 0 120 160 Fig6. IDR - VSDF 5 Common Source 0 -80 40 Junction Temperature Tj ( C ) Fig5. Vth - Tj 2008. 1. 25 20 Fig4. RDS(on) - Tj Normalized Drain Source On Resistance RDS(ON) (mΩ) Drain Current ID (A) 20 16 Drain - Current ID (A) Fig3. ID - VGS 24 12 160 Common Source TA= 25 C Pulse Test 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Source - Drain Forward Voltage VSDF (V) 3/4 KMB7D0N40QA Fig.7 Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig.8 Resistive Load Switching RL VDS 90% 0.5 VDSS 3.3Ω VDS 10 V VGS VGS 10% td(on) tr ton 2008. 1. 25 Revision No : 0 td(off) tf toff 4/4