TOSHIBA TPCS8214

TPCS8214
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCS8214
Lithium Ion Battery Applications
Unit: mm
•
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 10S (typ.)
•
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
•
Enhancement mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200μA)
•
Common drain
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
V
Drain current
VGSS
±12
DC
(Note 1)
ID
6
Pulse
(Note 1)
IDP
24
PD (1)
1.1
Single-device
Drain power
operation (Note 3a)
dissipation
Single-device value
(t = 10 s)
(Note 2a) at dual operation
(Note 3b)
Single-device
operation (Note 3a)
Drain power
dissipation
Single-device value
(t = 10 s)
(Note 2b) at dual operation
(Note 3b)
A
W
PD (2)
0.75
PD (1)
0.6
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
W
PD (2)
0.35
Single pulse avalanche energy
(Note 4)
EAS
9.4
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.075
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Circuit Configuration
8
7
6
5
1
2
3
4
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
WARNING
【Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pack】
Flame-retardant resins of UL94-V0 flammability class are used in packages, however, they are not
noncombustible．Use a unit example PTC Thermistor, which can shut off the power supply if a short-circuit
occurs. If the power supply is not shut off on the occurring short-circuit,a large short-circuit current will flow
continuously, which may cause the device to catch fire or smoke.
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TPCS8214
Thermal Characteristics
Characteristics
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(Note 2a) Single-device value at
(t = 10 s)
dual operation
(Note 3b)
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(Note 2b) Single-device value at
(t = 10 s)
dual operation
(Note 3b)
Symbol
Max
Rth (ch-a) (1)
114
Rth (ch-a) (2)
167
Rth (ch-a) (1)
208
Rth (ch-a) (2)
357
Unit
°C/W
°C/W
Marking (Note 6)
Part No. (or abbreviation code)
S8214
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.Note 2:
a)
Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3:
a)
The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b)
The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4: VDD = 24 V, Tch = 25°C (initial), L = 0.2mH, RG = 25 Ω, IAR = 6 A
Note 5: Repetitive rating: pulse width limited by max channel temperature
Note 6: ○ on lower right of the marking indicates Pin 1.
※ Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year:
sequential number up to 52 or 53)
Year of manufacture
(The last digits of a year)
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TPCS8214
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −12 V
15
⎯
⎯
Vth
VDS = 10 V, ID = 200 μA
0.5
⎯
1.4
VGS = 2.5 V, ID = 4.2 A
⎯
12.5
18.5
VGS = 4.0 V, ID = 4.8 A
⎯
11
13.5
VGS = 4.5 V, ID = 4.8 A
⎯
10.5
13
VDS = 10 V, ID = 3.0 A
5
10
⎯
⎯
3240
⎯
⎯
285
⎯
⎯
315
⎯
⎯
21
⎯
⎯
33
⎯
⎯
15
⎯
⎯
66
⎯
⎯
42
⎯
⎯
7
⎯
⎯
14
⎯
Gate threshold voltage
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-ON time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ton
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
4.7 Ω
Switching time
Fall time
tf
toff
ID = 3 A
5V
VGS
0V
VDD ∼
− 15 V
VOUT
RL = 4.7Ω
Drain-source breakdown voltage
Duty <
= 1%, tw = 10 μs
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
VDD ∼
− 24 V, VGS = 5 V, ID = 6 A
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
24
A
⎯
⎯
−1.2
V
VDSF
IDR = 6 A, VGS = 0 V
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TPCS8214
ID – VDS
ID – VDS
10
20
4.5
2
1.9
Common source
1.8
Ta = 25°C, Pulse test
(A)
8 3.1
ID
4
6
1.7
Drain current
Drain current
ID
(A)
2.5
4
1.6
2
16
2.5
Common source
2
Ta = 25°C
3.1
4
4.5
Pulse test
1.9
12
1.8
8
1.7
4
VGS = 1.5 V
1.6
VGS = 1.5 V
0
0
0.2
0.4
0.6
0.8
Drain-source voltage VDS
0
0
1.0
(V)
1
2
ID – VGS
(V)
VDS – VGS
Common source
VDS (V)
VDS = 10 V
Pulse test
(A)
8
Drain−source voltage
ID
Drain current
5
0.5
Common source
6
25
4
2
100
0
0
1
Ta = −55°C
Ta = 25°C
Pulse test
0.4
0.3
0.2
ID = 1.5 A
3
12
0.1
6
0
0
3
2
Gate-source voltage VGS
(V)
2
4
8
6
Gate-source voltage VGS
|Yfs| – ID
10
12
(V)
RDS (ON) – ID
100
100
Common source
Ta = −55°C
25
100
Ta = 25°C
50
Drain-source ON resistance
RDS (ON) (mΩ)
50
Forward transfer admittance
|Yfs| (S)
4
Drain-source voltage VDS
12
10
3
30
10
5
3
Common source
Pulse test
30
3.1
VGS = 2.5 V
10
4
4.5
5
3
VDS = 10 V
Pulse test
1
0.1
0.3 0.5
1
3
5
10
30 50
1
0.1
100
Drain current ID (A)
0.3 0.5
1
3
5
10
30 50
100
Drain current ID (A)
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TPCS8214
RDS (ON) – Ta
IDR – VDS
30
100
(A)
Pulse test
20
IDR
ID = 6 A
3
Drain reverse current
1.5
VGS = 2.5 V
10
0
−80
4.5
30
10
3
10
5
5
3
1
0.5
Common source
0.3
Ta = 25°C
Pulse test
−40
0
40
80
120
0.1
0
160
−0.2
−0.4
C – VDS
2.0
Vth (V)
Coss
Crss
100
Common source
Ta = 25°C
VGS = 0 V
f = 1 MHz
1
0.1
10
ID = 200 μA
Pulse test
1.2
0.8
0.4
−40
0.4
(3)
VDS (V)
(4)
50
100
120
160
30
0.2
0
0
80
Dynamic input/output
characteristics
Drain−source voltage
Drain power dissipation PD (W)
0.6
40
(V)
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t = 10 s
(2)
0
Ambient temperature Ta (°C)
PD – Ta
1
(V)
VDS = 10 V
1.6
100
Drain−source voltage VDS
(1)
−1.2
Common source
0
−80
1
−1.0
150
VDD = 24 V
20
6
10
2
VDD = 12, 24 V
6
Common source
ID = 6 A
Ta = 25°C, Pulse test
10
20
30
40
Total gate charge
Ambient temperature Ta (°C)
5
4
VGS
VDS
12
0
0
200
6
(V)
Capacitance
Gate threshold voltage
1000
C
(pF)
Ciss
0.8
−0.8
Vth – Ta
10000
1.2
−0.6
Drain-source voltage VDS
Ambient temperature Ta (°C)
10
VGS = −1 V
0
1
50
Qg
60
VGS
3.1
4
50
Gate-source voltage
Drain-source ON resistance
RDS (ON) (mΩ)
Common source
0
70
(nC)
2007-01-16
TPCS8214
rth − tw
(4)
Device mounted on a glass-epoxy board (a) (Note 2a)
500 (1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
300
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
(3)
(2)
(1)
100
50
Transient thermal impedance
rth (°C/W)
1000
30
10
5
3
1
0.5
0.3
Single pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (s)
Safe operating area
100
Single-device value at dual
operation
(Note 3b)
1 ms *
10
Drain current
ID
(A)
ID max (Pulse) *
10 ms *
1
* Single pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
0.1
1
VDSS max
10
Drain−source voltage VDS
100
(V)
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2007-01-16
TPCS8214
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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