TOSHIBA TPC8207

TPC8207
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC8207
Lithium Ion Battery Applications
Notebook PC Applications
Unit: mm
Portable Equipment Applications
•
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 11 S (typ.)
•
Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
•
Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
20
V
Gate-source voltage
VGSS
±12
V
Drain current
Drain power
dissipation
(t = 10 s)
(Note 2a)
Drain power
dissipation
(t = 10 s)
DC
(Note 1)
ID
6
Pulse
(Note 1)
IDP
24
PD (1)
1.5
Single-device
operation (Note 3a)
W
Single-device value
at dual operation
(Note 3b)
PD (2)
1.1
Single-device
operation (Note 3a)
PD (1)
0.75
Single-device value
at dual operation
(Note 3b)
A
W
0.45
Single pulse avalanche energy
(Note 4)
EAS
46.8
mJ
Avalanche current
IAR
6
A
EAR
0.1
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Repetitive avalanche energy
Single-device value at dual operation
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.08 g (typ.)
PD (2)
(Note 2b)
JEDEC
Circuit Configuration
8
7
6
5
1
2
3
4
(Note 2a, 3b, 5)
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
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TPC8207
Thermal Characteristics
Characteristics
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(Note 2a) Single-device value at
(t = 10 s)
dual operation
(Note 3b)
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(Note 2b) Single-device value at
(t = 10 s)
dual operation
(Note 3b)
Symbol
Max
Rth (ch-a) (1)
83.3
Rth (ch-a) (2)
114
Rth (ch-a) (1)
167
Rth (ch-a) (2)
278
Unit
°C/W
°C/W
Marking (Note 6)
TPC8207
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
a)
Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3:
a)
The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b)
The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: VDD = 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 6 A
Note 5: Repetitive rating: pulse width limited by max channel temperature.
Note 6: • on lower right of the marking indicates Pin 1.
※ Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year, : sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
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TPC8207
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±10
µA
Drain cut-OFF current
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
20
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −12 V
8
⎯
⎯
Vth
VDS = 10 V, ID = 200 µA
0.5
⎯
1.2
VGS = 2.0 V, ID = 4.2 A
⎯
22
45
VGS = 2.5 V, ID = 4.2 A
⎯
19
30
VGS = 4.0 V, ID = 4.8 A
⎯
16
20
VDS = 10 V, ID = 3.0 A
5.5
11
⎯
⎯
2010
⎯
⎯
210
⎯
⎯
240
⎯
⎯
6
⎯
⎯
14
⎯
⎯
22
⎯
⎯
94
⎯
⎯
22
⎯
⎯
3.2
⎯
⎯
4.7
⎯
Min
Typ.
Max
⎯
⎯
24
A
⎯
⎯
−1.2
V
Gate threshold voltage
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-ON time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ton
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
4.7 Ω
Switching time
Fall time
tf
toff
ID = 3 A
VGS 5 V
0V
RL = 3.3 Ω
Drain-source breakdown voltage
VOUT
VDD ∼
− 10 V
Duty <
= 1%, tw = 10 µs
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
VDD ∼
− 16 V, VGS = 5 V, ID = 6 A
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
⎯
IDRP
VDSF
IDR = 6 A, VGS = 0 V
3
Unit
2007-01-16
TPC8207
ID – VDS
6
2
1.7
ID
6
Drain current
(A)
8
Common source, Ta = 25°C, Pulse test
4
1.6
12
8
1.55
1.5
2
10
16
1.65
(A)
8
4
ID
10
ID – VDS
20
Drain current
10
8
6
Common source
2
4
Ta = 25°C
Pulse test
1.9
1.8
1.7
1.65
1.6
1.55
4
1.4
1.5
VGS = 1.3 V
VGS = 1.3 V
0
0
0.2
0.4
0.8
0.6
Drain-source voltage
0
0
1
1
VDS (V)
2
(V)
VDS = 10 V
Pulse test
VDS
8
Drain-source voltage
Drain current
(A)
ID
12
100
25
4
1
2
3
Gate-source voltage
4
0.6
0.4
3
4
0.2
ID = 6 A
VGS
0
0
5
(V)
2
4
6
8
Gate-source voltage
Drain-source ON resistance
RDS (ON) (mΩ)
25
−55
Ta = 100°C
10.0
Drain current
(V)
Common source
Ta = 25°C
Pulse test
100.0
1.0
12
RDS (ON) – ID
VDS = 10 V
Pulse test
1.0
0.1
10
VGS
1000
Common source
(S)
Forward transfer admittance ⎪Yfs⎪
VDS (V)
Ta = 25°C
Pulse test
0.8
|Yfs| – ID
1000.0
5
Common source
Ta = −55°C
0
0
4
VDS – VGS
1.0
Common source
16
3
Drain-source voltage
ID – VGS
20
1.4
10.0
100
4
VGS = 2 V
2.5
10
1
0.1
100.0
ID (A)
6
1
Drain current
4
10
100
ID (A)
2007-01-16
TPC8207
RDS (ON) – Ta
IDR – VDS
100
50
Common source
Drain reverse current IDR (A)
Drain-source ON resistance
RDS (ON) (mΩ)
Pulse test
40
VGS = 2.5 V
VGS = 2 V
30
ID = 6 A
1.5A, 3A
20
VGS = 4 V
ID = 1.5A, 3 A, 6A
10
ID = 1.5 A, 3A, 6A
5, 10
1
3
10
VGS = 0 V
1
Common source
Ta = 25°C
Pulse test
0
−80
−40
0
40
Ambient temperature
80
Ta
120
0.1
−0
160
−0.2
(°C)
−0.4
Vth (V)
Gate threshold voltage
Coss
Crss
100
Ta = 25°C
VGS = 0 V
f = 1 MHz
1
10
Drain-source voltage
0.8
0.6
0.4
0.2
0
−80
120
160
(°C)
100
150
Ta
VDS
8
(V)
16
VDS
(4)
Ambient temperature
80
Ta
Dynamic input/output characteristics
(3)
50
40
VDS (V)
Drain-source voltage
(W)
1.0
0
Ambient temperature
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
(2)
−40
100
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(1)
ID = 200 µA
Pulse test
1.0
PD – Ta
2.0
Common source
VDS = 10 V
1.2
8V
12
(°C)
VDD = 16 V
8
4
Common source
ID = 6 A
Ta = 25°C
4
VGS
0
0
200
6
4V
8
16
2
Pulse test
24
32
VGS (V)
10
0.1
PD
VDS (V)
Gate-source voltage
Capacitance
C
(pF)
1000
Common source
Drain power dissipation
−1.2
1.4
Ciss
0
0
−1
Vth – Ta
Capacitance – VDS
0.5
−0.8
Drain-source voltage
10000
1.5
−0.6
0
Total gate charge Qg (nC)
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TPC8207
rth − tw
1000
(4)
Normalized transient thermal impedance
rth (°C/W)
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
100 (4) Single-device value at dual operation (Note 3b)
(3)
(2)
(1)
10
1
0
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(S)
Safe operating area
100
Single-device value at dual
operation
(Note 3b)
50
30 ID max (pulse) *
Drain current
ID
(A)
10
1 ms *
10 ms *
5
3
1
0.5
0.3
0.1
0.05 * Single pulse Ta = 25°C
0.03 Curves must be derated linearly
with increase in temperature.
0.01
0.01
0.03
0.1
0.3
1
Drain-source voltage
VDSS max
3
10
30
100
VDS (V)
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2007-01-16
TPC8207
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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