TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) DC (Note 1) ID 6 Pulse (Note 1) IDP 24 PD (1) 1.5 Single-device operation (Note 3a) W Single-device value at dual operation (Note 3b) PD (2) 1.1 Single-device operation (Note 3a) PD (1) 0.75 Single-device value at dual operation (Note 3b) A W 0.45 Single pulse avalanche energy (Note 4) EAS 46.8 mJ Avalanche current IAR 6 A EAR 0.1 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Repetitive avalanche energy Single-device value at dual operation ― JEITA ― TOSHIBA 2-6J1E Weight: 0.08 g (typ.) PD (2) (Note 2b) JEDEC Circuit Configuration 8 7 6 5 1 2 3 4 (Note 2a, 3b, 5) Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2007-01-16 TPC8207 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (Note 2a) Single-device value at (t = 10 s) dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (Note 2b) Single-device value at (t = 10 s) dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 83.3 Rth (ch-a) (2) 114 Rth (ch-a) (1) 167 Rth (ch-a) (2) 278 Unit °C/W °C/W Marking (Note 6) TPC8207 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 6 A Note 5: Repetitive rating: pulse width limited by max channel temperature. Note 6: • on lower right of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year, : sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2007-01-16 TPC8207 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯ Vth VDS = 10 V, ID = 200 µA 0.5 ⎯ 1.2 VGS = 2.0 V, ID = 4.2 A ⎯ 22 45 VGS = 2.5 V, ID = 4.2 A ⎯ 19 30 VGS = 4.0 V, ID = 4.8 A ⎯ 16 20 VDS = 10 V, ID = 3.0 A 5.5 11 ⎯ ⎯ 2010 ⎯ ⎯ 210 ⎯ ⎯ 240 ⎯ ⎯ 6 ⎯ ⎯ 14 ⎯ ⎯ 22 ⎯ ⎯ 94 ⎯ ⎯ 22 ⎯ ⎯ 3.2 ⎯ ⎯ 4.7 ⎯ Min Typ. Max ⎯ ⎯ 24 A ⎯ ⎯ −1.2 V Gate threshold voltage Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time Turn-ON time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton Turn-OFF time Total gate charge (gate-source plus gate-drain) 4.7 Ω Switching time Fall time tf toff ID = 3 A VGS 5 V 0V RL = 3.3 Ω Drain-source breakdown voltage VOUT VDD ∼ − 10 V Duty < = 1%, tw = 10 µs Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd VDD ∼ − 16 V, VGS = 5 V, ID = 6 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition ⎯ IDRP VDSF IDR = 6 A, VGS = 0 V 3 Unit 2007-01-16 TPC8207 ID – VDS 6 2 1.7 ID 6 Drain current (A) 8 Common source, Ta = 25°C, Pulse test 4 1.6 12 8 1.55 1.5 2 10 16 1.65 (A) 8 4 ID 10 ID – VDS 20 Drain current 10 8 6 Common source 2 4 Ta = 25°C Pulse test 1.9 1.8 1.7 1.65 1.6 1.55 4 1.4 1.5 VGS = 1.3 V VGS = 1.3 V 0 0 0.2 0.4 0.8 0.6 Drain-source voltage 0 0 1 1 VDS (V) 2 (V) VDS = 10 V Pulse test VDS 8 Drain-source voltage Drain current (A) ID 12 100 25 4 1 2 3 Gate-source voltage 4 0.6 0.4 3 4 0.2 ID = 6 A VGS 0 0 5 (V) 2 4 6 8 Gate-source voltage Drain-source ON resistance RDS (ON) (mΩ) 25 −55 Ta = 100°C 10.0 Drain current (V) Common source Ta = 25°C Pulse test 100.0 1.0 12 RDS (ON) – ID VDS = 10 V Pulse test 1.0 0.1 10 VGS 1000 Common source (S) Forward transfer admittance ⎪Yfs⎪ VDS (V) Ta = 25°C Pulse test 0.8 |Yfs| – ID 1000.0 5 Common source Ta = −55°C 0 0 4 VDS – VGS 1.0 Common source 16 3 Drain-source voltage ID – VGS 20 1.4 10.0 100 4 VGS = 2 V 2.5 10 1 0.1 100.0 ID (A) 6 1 Drain current 4 10 100 ID (A) 2007-01-16 TPC8207 RDS (ON) – Ta IDR – VDS 100 50 Common source Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) (mΩ) Pulse test 40 VGS = 2.5 V VGS = 2 V 30 ID = 6 A 1.5A, 3A 20 VGS = 4 V ID = 1.5A, 3 A, 6A 10 ID = 1.5 A, 3A, 6A 5, 10 1 3 10 VGS = 0 V 1 Common source Ta = 25°C Pulse test 0 −80 −40 0 40 Ambient temperature 80 Ta 120 0.1 −0 160 −0.2 (°C) −0.4 Vth (V) Gate threshold voltage Coss Crss 100 Ta = 25°C VGS = 0 V f = 1 MHz 1 10 Drain-source voltage 0.8 0.6 0.4 0.2 0 −80 120 160 (°C) 100 150 Ta VDS 8 (V) 16 VDS (4) Ambient temperature 80 Ta Dynamic input/output characteristics (3) 50 40 VDS (V) Drain-source voltage (W) 1.0 0 Ambient temperature Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (2) −40 100 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) (1) ID = 200 µA Pulse test 1.0 PD – Ta 2.0 Common source VDS = 10 V 1.2 8V 12 (°C) VDD = 16 V 8 4 Common source ID = 6 A Ta = 25°C 4 VGS 0 0 200 6 4V 8 16 2 Pulse test 24 32 VGS (V) 10 0.1 PD VDS (V) Gate-source voltage Capacitance C (pF) 1000 Common source Drain power dissipation −1.2 1.4 Ciss 0 0 −1 Vth – Ta Capacitance – VDS 0.5 −0.8 Drain-source voltage 10000 1.5 −0.6 0 Total gate charge Qg (nC) 5 2007-01-16 TPC8207 rth − tw 1000 (4) Normalized transient thermal impedance rth (°C/W) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) 100 (4) Single-device value at dual operation (Note 3b) (3) (2) (1) 10 1 0 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (S) Safe operating area 100 Single-device value at dual operation (Note 3b) 50 30 ID max (pulse) * Drain current ID (A) 10 1 ms * 10 ms * 5 3 1 0.5 0.3 0.1 0.05 * Single pulse Ta = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.01 0.01 0.03 0.1 0.3 1 Drain-source voltage VDSS max 3 10 30 100 VDS (V) 6 2007-01-16 TPC8207 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2007-01-16