TPC6201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6201 HDD Motor Drive Applications Notebook PC Applications Portable Equipment Applications Unit: mm · Low drain-source ON resistance: RDS (ON) = 80 mΩ (typ.) · High forward transfer admittance: |Yfs| = 3.8 S (typ.) · Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) · Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kW) VDGR 30 V Gate-source voltage VGSS ±20 V Drain current DC (Note 1) ID 2.5 Pulse (Note 1) IDP 10 PD (1) 0.9 Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single device value at (Note 2a) dual operation (Note 3b) A W PD (2) 0.76 JEITA ― 2-3T1B Weight: 0.011 g (typ.) PD (1) 0.4 PD (2) 0.31 Single pulse avalanche energy (Note 4) EAS 1.0 mJ Avalanche current IAR 1.25 A EAR 0.16 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C (Note 5) ― TOSHIBA Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single device value at (Note 2b) dual operation (Note 3b) Repetitive avalanche energy JEDEC W Circuit Configuration 6 5 4 1 2 3 Thermal Characteristics Marking (Note 6) Characteristics Symbol Max Single-device operation Rth (ch-a) (2) Thermal Resistance (Note 3a) (channel-to-ambient) (t = 5 s) (Note 2a) Single device value at R (2) dual operation (Note 3b) th (ch-a) Unit 139 °C/W S4A 165 Single-device operation Rth (ch-a) (2) Thermal Resistance (Note 3a) (channel-to-ambient) (t = 5 s) (Note 2b) Single device value at Rth (ch-a) (2) dual operation (Note 3b) 310 °C/W 400 Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) Please see next page. This transistor is an electrostatically sensitive device. Please handle it with caution. 1 2002-01-17 TPC6201 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ¾ ¾ 10 mA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ¾ ¾ V (BR) DSX ID = 10 mA, VGS = -20 V 15 ¾ ¾ Vth VDS = 10 V, ID = 1 mA 1.3 ¾ 2.5 RDS (ON) VGS = 4.5 V, ID = 1.3 A ¾ 128 145 RDS (ON) VGS = 10 V, ID = 1.3 A ¾ 80 95 Forward transfer admittance |Yfs| VDS = 10 V, ID = 1.3 A 1.25 3.8 ¾ Input capacitance Ciss ¾ 170 ¾ ¾ 25 ¾ ¾ 40 ¾ ¾ 2.4 ¾ ¾ 8 ¾ ¾ 2 ¾ ¾ 11 ¾ ¾ 4.7 ¾ ¾ 3.4 ¾ ¾ 1.3 ¾ Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Reverse transfer capacitance Crss Output capacitance Coss tr Turn-ON time ton 4.7 W Switching time Fall time tf Turn-OFF time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ID = 1.3 A VOUT 10 V VGS 0V RL = 11.5 W Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V V mW S pF ns VDD ~ - 15 V Duty < = 1%, tw = 10 ms VDD ~ - 24 V, VGS = 10 V, ID = 2.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Pulse drain reverse current Forward voltage (diode) (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ¾ ¾ ¾ 10 A ¾ ¾ -1.2 V VDSF IDR = 2.5 A, VGS = 0 V Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 ´ 25.4 ´ 0.8 Unit: (mm) FR-4 25.4 ´ 25.4 ´ 0.8 Unit: (mm) (a) (b) Note 3: (a) Single-device operation; values of PD (1) and Rth (ch-a) (1) for a single device during single-device operation (b) Dual operation; values of PD (2) and Rth (ch-a) (2) for a single device during dual operation Note 4: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 W, IAR = 1.25 A Note 5: Repetitive rating; pulse width limited by maximum channel temperature Note 6: Black round marking “·” locates on the left lower side of parts number marking “S4A” indicates terminal No.1. 2 2002-01-17 TPC6201 ID – VDS ID – VDS 5 10 Common source Ta = 25°C Pulse test 4 8 6 Common source Ta = 25°C Pulse test 5 4.5 8 8 ID (A) 4.5 (A) 3 Drain current ID Drain current 6 10 10 3.5 2 3 1 4 6 4 3.5 2 3 VGS = 2.5 V 0 0 0.1 0.2 0.3 Drain-source voltage 0.4 VDS VGS = 2.5 V 0 0 0.5 1 (V) 2 Drain-source voltage ID – VGS (V) Common source VDS = 10 V Pulse test (V) Common source Ta = 25°C Pulse test 0.8 VDS Ta = -55°C 1 Drain-source voltage Drain current 2 100°C 0.6 0.4 ID = 2.5 A 0.2 1.2 A 0.6 A 25°C 0 0 1 2 3 Gate-source voltage 4 VDS 0 0 5 2 (V) 4 VDS = 10 V Pulse test Ta = -55°C 5 Drain-source on resistance RDS (ON) (mW) (S) Common source 25°C 100°C 3 0.3 0.5 1 Drain current 3 ID 8 VGS 10 (V) RDS (ON) – ID 1000 1 0.1 6 Gate-source voltage |Yfs| – ID 10 ïYfsï VDS 5 1.0 (A) ID 3 Forward transfer admittance 4 VDS – VGS 5 4 3 5 Common source Ta = 25°C Pulse test 300 VGS = 4.5 V 100 30 10 0.1 10 (A) 10 V 0.3 1 3 Drain current 3 10 ID 30 100 (A) 2002-01-17 TPC6201 RDS (ON) – Ta IDR – VDS 100 250 Common source Ta = 25°C Pulse test Common source (A) Drain reverse current IDR Drain-source on resistance RDS (ON) (mW) Pulse test 200 ID = 2.5 A, 1.2 A, 0.6 A 150 VGS = 4.5 V 100 ID = 2.5 A, 1.2 A, 0.6 A 50 VGS = 10 V 0 -80 -40 0 40 120 80 Ambient temperature Ta 160 30 10 10 V 3 1 5V 1V 0.3 3V 0.1 0 -0.2 VGS = 0 V -0.4 -0.6 -0.8 Drain-source voltage (°C) -1 VDS -1.2 -1.4 (V) Vth – Ta Capacitance – VDS 1000 2.8 Gate threshold voltage Vth (V) Common source Ciss 100 Coss 30 Crss 10 10 Drain-source voltage VDS 30 1.6 1.2 0.8 -80 100 (V) Drain power dissipation 0.6 0.4 (3) VDS (V) 12 V t=5s (4) 0.2 0 0 25 50 75 100 120 80 160 Dynamic input/output characteristics Drain-source voltage (W) (2) PD 0.8 40 40 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Dual operation (per device) (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Dual operation (per device) (Note 3b) (1) 0 Ambient temperature Ta (°C) PD – Ta 1 -40 125 150 175 6V 30 Ambient temperature Ta (°C) 16 12 VDS = 24 V VDD = 24 V 20 8 12 V 10 4 VGS 6V 0 0 200 Common source ID = 2.5 A Ta = 25°C Pulse test (V) 3 2 2 4 6 8 VGS Common source 3 VGS = 0 V f = 1 MHz Ta = 25°C 1 0.1 0.3 1 VDS = 10 V ID = 1 mA Pulse test 2.4 Gate-source voltage Capacitance C (pF) 300 0 10 Total gate charge Qg (nC) 4 2002-01-17 TPC6201 rth - tw Transient thermal impedance rth (°C/W) 1000 (4) (3) 300 (2) (1) 100 30 Device mounted on a glass-epoxy board (a) (Note 2a) 10 (1) Single-device operation (Note 3a) (2) Single device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single device value at dual operation (Note 3b) 3 Single pulse 1 0.001 0.01 0.1 1 10 Pulse tw 100 1000 (S) Safe operating area 100 Single device value at dual operation (Note 3b) 30 Drain current ID (A) 10 ID max (pulse)* 1 ms* 3 1 0.3 0.1 0.03 0.01 0.003 *: Curves must be derated linearly with increase in temperature 0.001 0.01 0.03 0.1 0.3 VDSS max 1 Drain-source voltage 3 VDS 10 30 100 (V) 5 2002-01-17 TPC6201 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-01-17