TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) TPC8403 Motor Drive Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Low drain-source ON resistance: • P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.) • Low leakage current: • Enhancement mode : P Channel Vth = −1.0~−2.2 V (VDS = −10 V, ID = −1 mA) : N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) N Channel |Yfs| = 7.8 S (typ.) P Channel IDSS = −10 μA (VDS = −30 V) N Channel IDSS = 10 μA (VDS = 30 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating P Channel N Channel Unit Drain-source voltage VDSS −30 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 30 V Gate-source voltage VGSS ±20 ±20 V Drain current DC (Note 1) ID −4.5 6 Pulse (Note 1) IDP −18 24 PD(1) 1.5 1.5 PD(2) 1.1 1.1 Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2a) dual operation (Note 3b) PD(1) 0.75 0.75 PD(2) 0.45 0.45 Single pulse avalanche energy EAS Avalanche current IAR Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) EAR 0.11 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C −4.5 6 JEITA ― 2-6J1E Weight: 0.080 g (typ.) Circuit Configuration Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2b) dual operation (Note 3b) 46.8 (Note 4b) ― TOSHIBA A W 26.3 (Note 4a) JEDEC 8 7 6 5 mJ A 1 2 N-ch 3 4 P-ch Note: Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-13 TPC8403 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 2a) Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 2b) Symbol Max Rth (ch-a) (1) 83.3 Rth (ch-a) (2) 114 Rth (ch-a) (1) 167 Rth (ch-a) (2) 278 Unit °C/W Marking TPC8403 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: a) VDD = −24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = −4.5 A b) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 6.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2006-11-13 TPC8403 P-channel Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯ Vth VDS = −10 V, ID = −1 mA −1.0 ⎯ −2.2 VGS = −4.5 V, ID = −2.2 A ⎯ 66 90 VGS = −10 V, ID = −2.2 A ⎯ 45 55 VDS = −10 V, ID = −2.2 A 3.1 6.2 ⎯ ⎯ 940 ⎯ ⎯ 270 ⎯ ⎯ 390 ⎯ ⎯ 13 ⎯ ⎯ 21 ⎯ ⎯ 25 ⎯ ⎯ 73 ⎯ ⎯ 18 ⎯ ⎯ 4 ⎯ ⎯ 4 ⎯ Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-ON time ton −10 V Turn-OFF time Total gate charge (gate-source plus gate-drain) tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd RL = 6.8 Ω 4.7 Ω Switching time Fall time ID = −2.2 A VOUT 0V V V mΩ S pF ns VDD ∼ − −15 V Duty < = 1%, tw = 10 μs VDD ∼ − −24 V, VGS = −10 V, ID = −4.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −18 A ⎯ ⎯ 1.2 V VDSF IDR = −4.5 A, VGS = 0 V 3 2006-11-13 TPC8403 N-channel Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 VGS = 4.5 V, ID = 3 A ⎯ 38 46 VGS = 10 V, ID = 3 A ⎯ 25 33 VDS = 10 V, ID = 3 A 3.9 7.8 ⎯ ⎯ 850 ⎯ ⎯ 180 ⎯ ⎯ 270 ⎯ ⎯ 11 ⎯ ⎯ 18 ⎯ ⎯ 6.5 ⎯ ⎯ 27 ⎯ ⎯ 17 ⎯ ⎯ 3 ⎯ ⎯ 4 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-ON time ton 0V Turn-OFF time Total gate charge (gate-source plus gate-drain) tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd RL = 5.0 Ω 4.7 Ω Switching time Fall time ID = 3.0 A VOUT 10 V V V mΩ S pF ns VDD ∼ − 15 V Duty < = 1%, tw = 10 μs VDD ∼ − 24 V, VGS = 10 V, ID = 6 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 24 A ⎯ ⎯ −1.2 V VDSF IDR = 6 A, VGS = 0 V 4 2006-11-13 TPC8403 P-channel ID – VDS −5 −10 V −3.2 V −6 V −4 V −8 V −4 V −3.6 V −2.8 V −3 −2.6 V −2 −2.4 V −1 −3.4 V Common source Ta = 25°C Pulse test −10 V −8 −3 V Drain current ID (A) Drain current ID (A) −4 ID – VDS −10 Common source Ta = 25°C Pulse test −8 V −6 V −3.2 V −6 −3 V −2.8 V −4 −2.6 V −2 −2.4 V VGS = −2.2 V 0 0 −0.2 −0.4 −0.6 Drain-source voltage −0.8 VGS = −2.2 V 0 0 −1.0 VDS (V) −1 −2 −3 Drain-source voltage ID – VGS −4 −5 VDS (V) VDS – VGS −18 Common source Ta = 100ºC VDS (V) −55ºC 25ºC −10 Drain-source voltage Drain current ID (A) −14 −6 −2 0 0 −1 Common source −0.6 VDS = −10 V Pulse test −2 −3 −4 Gate-source voltage −5 Pulse test −0.5 −0.4 −0.3 ID = −4.5 A −0.2 −2.2 A −0.1 0 0 −6 Ta = 25°C VGS (V) −1.3A −2 −4 Gate-source voltage |Yfs| – ID Common source VDS = −10 V 50 −8 −10 −12 VGS (V) RDS (ON) – ID 100 VGS = −4.5 V 50 30 Ta = −55°C 10 Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) 100 −6 25°C Ta = 100°C 5 3 1 0.5 VGS = −10 V 30 10 5 3 0.3 0.1 −0.1 −0.3 −1 −3 −10 −30 1 −0.1 −100 Drain current ID (A) Common source Ta = 25°C Pulse test −0.3 −1 −3 −10 −30 −100 Drain current ID (A) 5 2006-11-13 TPC8403 P-channel RDS (ON) – Ta IDR – VDS 120 ID = −4.5 A (A) −1.3 A VGS = −4.5 V −2.2 A ID = −4.5 A −1.3 A −2.2 A 40 VGS = −10 V 20 0 −80 Common source Pulse test −40 0 40 80 120 −5 −3 −3 −5 −1 VGS = 0 V −1 −0.5 −0.3 Common source Ta = 25°C Pulse test −0.1 0 160 0.2 Ambient temperature Ta (°C) Capacitance – VDS Vth (V) Gate threshold voltage (pF) Capacitance C Coss Crss 10 Common source Ta = 25°C f = 1MHz VGS = 0 V 1 −0.1 −0.3 −1 −3 −10 Drain-source voltage −30 120 VDS (V) Drain-source voltage Drain power dissipation PD (W) 40 80 120 160 Dynamic input/output characteristics −40 0.4 80 0 VDS (V) (4) 40 −40 Ambient temperature Ta (°C) 0.8 (3) 0 0 VDS (V) −1 −100 (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 1.2 (2) 1.2 Common source VDS = −10 V ID = −1 mA Pulse test 0 −80 Device mounted on a glass-epoxy board (a) 1.6 (1) 1.0 −2 PD – Ta 2 0.8 Vth – Ta −3 Ciss 100 0.6 Drain-source voltage 10000 1000 0.4 160 −30 −20 12 VDD = −24 V 8 VGS −10 0 0 200 16 Common source ID = −4.5 A Ta = 25°C Pulse test 4 8 16 24 VGS (V) 60 −10 −10 Gate-source voltage 80 Drain reverse current IDR Drain-source ON resistance RDS (ON) (mΩ) 100 0 32 Total gate charge Qg (nC) Ambient temperature Ta (°C) 6 2006-11-13 TPC8403 P-channel rth − tw 1000 Normalized transient thermal impedance rth (°C/W) Device mounted on a glass-epoxy board (a) (Note 2a) 500 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) (4) (3) (2) (1) 100 50 30 10 5 3 1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (S) Safe operating area 100 Single-device value at dual operation (Note 3b) ID max (pulse) * 1 ms * Drain current ID (A) 10 10 ms * 1 0.1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.01 0.1 1 Drain-source voltage VDSS max 10 100 VDS (V) 7 2006-11-13 TPC8403 N-channel ID – VDS ID – VDS 10 20 10 V 6V 4 V 3.6 V 3.4 V 8V 3.3 V 16 3.2 V 6 Drain current ID (A) Drain current ID (A) 8 3.1 V 3V 4 2.9 V 2.8 V 2 0 0 Common source Ta = 25°C Pulse test 0.2 0.4 8V 3.6 V 12 3.4 V 8 3.2 V 3V 4 2.8 V 0.8 VGS = 2.6 V 0 0 1.0 1 VDS (V) 2 3 Drain-source voltage ID – VGS 20 Common source Ta = 25°C Pulse test 3.8 V VGS = 2.6 V 0.6 Drain-source voltage 10 V 6 V 4V 4 5 VDS (V) VDS – VGS Ta = −55ºC 25ºC Common source 0.6 100ºC 12 Drain-source voltage Drain current ID (A) VDS (V) Ta = 25°C 16 8 4 0 0 Common source VDS = 10 V Pulse test 1 2 4 3 Gate-source voltage 5 0.4 0.3 0.2 ID = 6 A 0.1 0 0 6 Pulse test 0.5 VGS (V) 3A 1.5 A 2 4 Gate-source voltage |Yfs| – ID 50 30 50 Ta = −55°C Ta = 25°C Ta = 100°C 10 10 8 12 VGS (V) RDS (ON) – ID 100 Common source VDS = 10 V Pulse test Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) 100 6 5 3 1 0.5 VGS = 4.5 V 30 Common source Ta = 25°C Pulse test VGS = 10 V 10 5 3 0.3 0.1 0.1 0.3 1 3 10 30 1 0.1 100 Drain current ID (A) 0.3 1 3 10 30 100 Drain current ID (A) 8 2006-11-13 TPC8403 N-channel RDS (ON) – Ta IDR – VDS 30 60 (A) 3A ID = 1.5 A 6A 3A 30 ID = 1.5 A 20 VGS = 10 V 10 3 5 1 3 VGS = 0 V 1 0.5 0.3 Common source Ta = 25°C Pulse test Common source 0 −80 Pulse test −40 0 40 80 120 0.1 0 160 −0.2 Ambient temperature Ta (°C) Capacitance – VDS Vth (V) Gate threshold voltage (pF) Capacitance C Coss Crss 10 1 0.1 Common source Ta = 25°C f = 1MHz VGS = 0 V 1 0.3 10 3 Drain-source voltage 30 120 160 Dynamic input/output characteristics VDS (V) Drain-source voltage Drain power dissipation PD (W) 120 80 160 16 40 (4) 80 40 0 VDS (V) 0.4 40 −40 Ambient temperature Ta (°C) 0.8 (3) 0 0 VDS (V) 1 100 (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 1.2 (2) −1.2 Common source VDS = 10 V ID = 1 mA Pulse test 0 −80 Device mounted on a glass-epoxy board (a) 1.6 (1) −1.0 2 PD – Ta 2 −0.8 Vth – Ta 3 Ciss 100 −0.6 Drain-source voltage 10000 1000 −0.4 Common source ID = 6 A Ta = 25°C Pulse test 30 VDD = 24 V 20 Ambient temperature Ta (°C) 8 VGS 4 10 0 0 200 12 8 16 24 VGS (V) 40 10 Gate-source voltage VGS = 4.5 V Drain reverse current IDR Drain-source ON resistance RDS (ON) (mΩ) 50 5 10 6A 0 32 Total gate charge Qg (nC) 9 2006-11-13 TPC8403 N-channel rth − tw 1000 Normalized transient thermal impedance rth (°C/W) Device mounted on a glass-epoxy board (a) (Note 2a) 500 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) (4) (3) (2) (1) 100 50 30 10 5 3 1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (S) Safe operating area 100 Single-device value at dual operation (Note 3b) ID max (pulse) * 1 ms * Drain current ID (A) 10 10 ms * 1 0.1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.01 0.1 1 Drain-source voltage VDSS max 10 100 VDS (V) 10 2006-11-13 TPC8403 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2006-11-13