TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200 μA) • Common drain Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage V Drain current VGSS ±12 DC (Note 1) ID 6 Pulse (Note 1) IDP 24 PD (1) 1.1 Single-device Drain power operation (Note 3a) dissipation (t = 10 s) Single-device value (Note 2a) at dual operation (Note 3b) Single-device operation (Note 3a) Drain power dissipation (t = 10 s) Single-device value (Note 2b) at dual operation (Note 3b) A W PD (2) 0.75 PD (1) 0.6 PD (2) 0.35 JEDEC ⎯ JEITA ⎯ TOSHIBA 2-3R1E Weight: 0.035 g (typ.) W Single-pulse avalanche energy (Note 4) EAS 9.4 mJ Avalanche current IAR 6 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.075 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Circuit Configuration Note: For Notes 1 to 5, see the next page. 8 7 6 5 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. WARNING 【Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pack】 Flame-retardant resins of UL94-V0 flammability class are used in packages, however, they are not noncombustible.Use a unit, for example PTC Thermistor, which can shut off the power supply if a short-circuit occurs. If the power supply is not shut off on the occurring short-circuit,a large short-circuit current will flow continuously, which may cause the device to catch fire or smoke. 1 2007-01-16 TPCS8213 Thermal Characteristics Characteristic Single-device operation (Note 3a) Thermal resistance, channel to ambient (Note 2a) Single-device value at (t = 10 s) dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (Note 2b) Single-device value at (t = 10 s) dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 114 Rth (ch-a) (2) 167 Rth (ch-a) (1) 208 Rth (ch-a) (2) 357 Unit °C/W °C/W Marking (Note 6) Type S8213 ※ Lot No. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is applied to one device only.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is applied to both devices evenly.) Note 4: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 6 A Note 5: Repetitive rating: pulse width limited by max channel temperature Note 6: The circle “○” on lower right of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2007-01-16 TPCS8213 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯ Vth VDS = 10 V, ID = 200 μA 0.5 ⎯ 1.4 VGS = 2.5 V, ID = 4.2 A ⎯ 11 18 VGS = 4.0 V, ID = 4.8 A ⎯ 8.7 13 VGS = 4.5 V, ID = 4.8 A ⎯ 8.4 12 VDS = 10 V, ID = 3.0 A 6.5 13 ⎯ ⎯ 3140 ⎯ ⎯ 385 ⎯ ⎯ 425 ⎯ ⎯ 20 ⎯ ⎯ 30 ⎯ ⎯ 23 ⎯ ⎯ 84 ⎯ ⎯ 49 ⎯ ⎯ 6 ⎯ ⎯ 13 ⎯ Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time Turn-on time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton Turn-off time Total gate charge (gate-source plus gate-drain) 4.7 Ω Switching time Fall time tf toff ID = 3 A 5V VGS 0V VDD ∼ − 10 V VOUT RL = 3.3Ω Drain-source breakdown voltage Duty < = 1%, tw = 10 μs Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd VDD ∼ − 16 V, VGS = 5 V, ID = 6 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 24 A ⎯ ⎯ −1.2 V VDSF IDR = 6 A, VGS = 0 V 3 2007-01-16 TPCS8213 ID – VDS 4.5 2.5 4 3.1 ID – VDS 20 2 3.1 4 4.5 COMMON SOURCE Ta = 25°C, PULSE TEST DRAIN CURRNET ID (A) DRAIN CURRENT ID (A) 10 8 1.9 6 1.8 4 1.7 2 16 12 COMMON SOURCE Ta = 25°C 2.1 PULSE TEST 2.2 2.5 2 1.9 8 1.8 4 1.7 1.6 VGS = 1.5 V VGS = 1.5 V 0 0 0.2 0.4 0.6 0.8 0 0 1.0 DRAIN−SOURCE VOLTAGE VDS (V) 1 2 ID – VGS 5 VDS – VGS 0.5 DRAIN−SOURCE VOLTAGE VDS (V) COMMON SOURCE DRAIN CURRENT ID (A) 4 DRAIN−SOURCE VOLTAGE VDS (V) 12 10 3 1.6 VDS = 10 V PULSE TEST 8 25 6 Ta = −55°C 100 4 2 0 0 1 2 Ta = 25°C PULSE TEST 0.4 0.3 0.2 ID = 1.5 A 0.1 12 6 3 0 0 3 GATE−SOURCE VOLTAGE VGS COMMON SOURCE (V) 2 4 6 8 GATE−SOURCE VOLTAGE VGS |Yfs| – ID 10 12 (V) RDS (ON) – ID 100 100 50 25 30 Ta = −55°C 100 10 5 3 COMMON SOURCE VDS = 10 V DRAIN−SOURCE ON-RESISTANCE RDS (ON) (mΩ) FORWARD TRANSFER ADMITTANCE |Yfs| (S) COMMON SOURCE Ta = 25°C 50 PULSE TEST 30 2.5 10 4 VGS = 4.5 V 5 3 PULSE TEST 1 0.1 0.3 0.5 1 3 5 10 30 50 1 0.1 100 DRAIN CURRENT ID (A) 0.3 0.5 1 3 5 10 30 50 100 DRAIN CURRENT ID (A) 4 2007-01-16 TPCS8213 RDS (ON) – Ta IDR – VDS 100 DRAIN REVERSE CURRENT IDR (A) DRAIN−SOURCE ON-RESISTANCE RDS (ON) (mΩ) 30 COMMON SOURCE PULSE TEST ID = 6 A 20 3 1.5 2.5 10 VGS = 4, 4.5 V 0 −80 −40 0 40 80 AMBIENT TEMPERATURE 120 50 30 10 5 10 3 5 3 1 0.5 COMMON SOURCE Ta = 25°C PULSE TEST 0.3 0.1 0 160 −0.2 −0.4 C – VDS −0.8 −1.0 −1.2 Vth – Ta Vth (V) 2.0 Ciss COMMON SOURCE VDS = 10 V ID = 200 μA 1.6 PULSE TEST GATE THRESHOLD VOLTAGE (pF) −0.6 DRAIN−SOURCE VOLTAGE VDS (V) Ta (°C) 10000 CAPACITANCE C VGS = −1 V 0 1 1000 Coss Crss 100 COMMON SOURCE Ta = 25°C VGS = 0 V f = 1 MHz 10 0.1 1.2 0.8 0.4 0 −80 1 10 −40 0 40 80 AMBIENT TEMPERATURE 100 120 160 Ta (°C) DRAIN−SOURCE VOLTAGE VDS (V) DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1 0.8 0.6 0.4 (2) (3) (4) 0.2 0 0 50 100 AMBIENT TEMPERATURE 150 16 4 Ta (°C) VDS 8 6 8 4 8 VDD = 16 V 4 4 10 2 VGS 0 0 200 VDD = 16 V 12 8 COMMON SOURCE ID = 6 A Ta = 25°C, PULSE TEST (V) 20 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (1) DRAIN−SOURCE VOLTAGE VDS (V) DRAIN POWER DISSIPATION PD (W) 1.2 10 20 30 40 50 GATE−SOURCE VOLTAGE VGS PD – Ta 0 60 TOTAL GATE CHARGE Qg (nC) 5 2007-01-16 TPCS8213 rth − tw TRANSIENT THERMAL IMPEDANCE rth (°C/W) 1000 (4) Device mounted on a glass-epoxy board (a) (Note 2a) 500 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) (3) (2) (1) 100 50 30 10 5 3 1 0.5 0.3 SINGLE PULSE 0.1 0.001 0.01 0.1 1 PULSE WIDTH tw 10 100 1000 (s) SAFE OPERATING AREA 100 Single-device value at dual operation (Note 3b) DRAIN CURRENT ID (A) ID max (PULSE) * 1 ms * 10 10 ms * 1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 100 DRAIN−SOURCE VOLTAGE VDS (V) 6 2007-01-16 TPCS8213 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-01-16