AUK TMF8901F

TMF8901F
Semiconductor
Si RF LDMOS Transistor
Unit in mm
SOT-89
□ Applications
- VHF and UHF wide band amplifier
4
□ Features
- Power gain
GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Output power
POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Drain efficiency
ηD = 60 % (typ.)
Pin Configuration
□ Marking
1. Gate
4
2. Source
8901
3. Drain
4. Source
1
2
3
□ Absolute Maximum Ratings (TA = 25 ℃)
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
13.0
V
Gate to Source Voltage
VGS
4.0
V
Drain Current
ID
1.2
A
Total Power Dissipation
Ptot
3
W
Channel Temperature
Tch
150
℃
Storage Temperature
Tstg
-65 ~ 150
℃
Parameter
TMF8901F
□ Electrical Characteristics (TA = 25 ℃)
Parameter
Symbol
Gate to Source Leakage Current
IGSS
Drain to Source Leakage Current
Test Conditions
Min.
Max.
Unit
VGSS = 3.0 V
1
㎂
IDSS
VDSS = 8.5 V, VGS = 0 V
10
㎂
Threshold Voltage
Vth
VDS = 4.8 V, ID = 1 ㎃
1.4
V
Transconductance
Gm
VDS = 4.8 V, ID = 400 ㎃
0.8
Typ.
1.0
700
mS
Drain to Source Breakdown
Voltage
BVDSS
IDSS = 10 ㎂
Drain to Source On-Voltage
VDSon
VGS = 4 V, ID = 600 ㎃
0.4
V
GP
f = 470 MHz, PIN = 20 dBm
VDS = 4.5 V, IDset = 200 ㎃
12.5
dB
POUT
f = 470 MHz, PIN = 20 dBm
VDS = 4.5 V, IDset = 200 ㎃
32
dBm
670
mA
60
%
Power Gain
Output Power
13
V
Operating Current
Iop
Drain Efficiency
ηD
Power Gain
GP
f = 470 MHz, PIN = 15 dBm
VDS = 4.5 V, IDset = 50 ㎃
14
dB
POUT
f = 470 MHz, PIN = 15 dBm
VDS = 4.5 V, IDset = 50 ㎃
29
dBm
400
mA
44
%
Output Power
Operating Current
Iop
Drain Efficiency
ηD
TMF8901F
□ Typical Characteristics ( TA = 25℃, unless otherwise specified)
Output Power, Power Gain, Drain Efficiency
vs. Input Power
80
f = 470 MHz
Iidle = 200 mA
VDS = 4.5 V
70
60
POUT
25
50
ηD
20
40
GP
15
30
10
20
5
10
0
0
5
10
15
20
Output Power, POUT (dBm)
Power Gain, GP (dB)
30
f = 470 MHz
Iidle = 50 mA
VDS = 4.5 V
35
Drain Efficiency, ηD (%)
Output Power, POUT (dBm)
Power Gain, GP (dB)
35
80
40
0
25
60
30
POUT
50
25
ηD
40
20
GP
15
30
10
20
5
10
0
0
5
Input Power, PIN (dBm)
10
15
20
0
25
Input Power, PIN (dBm)
Output Power vs. Input Power
Drain Current vs. Input Power
900
40
f = 470 MHz
VDS = 4.5 V
30
Iidle = 200 mA
25
20
Iidle = 50 mA
15
f = 470 MHz
VDS = 4.5 V
800
Drain Current, IDS (mA)
35
Output Power, POUT (dBm)
70
10
700
600
500
Iidle = 200 mA
400
300
Iidle = 50 mA
200
5
100
0
0
0
5
10
15
20
Input Power, PIN (dBm)
25
0
5
10
15
20
Input Power, PIN (dBm)
25
Drain Efficiency, ηD (%)
40
TMF8901F
Power Gain, Drain Efficiency
vs. Drain Current
70
18
f = 470 MHz
Iidle = 200 mA
PIN = 20 dBm
ηD
14
60
13
GP
55
12
16
Power Gain, GP (dB)
65
16
15
11
50
10
2
3
4
5
6
7
68
66
64
15
ηD
14
62
GP
13
60
12
58
11
56
10
54
9
52
8
8
0
50
100
150
200
250
Drain Voltage, VDS (V)
Drain Idle Current, Iidle (mA)
Output Power vs. Input Power
Drain Current vs. Input Power
40
50
300
1100
VDS = 6 V
f = 470 MHz
Iidle = 200 mA
1000
f = 470 MHz
Iidle = 200 mA
900
30
Drain Current, IDS (mA)
35
Output Power, POUT (dBm)
f = 470 MHz
PIN = 20 dBm
VDS = 4.5 V
17
Drain Efficiency, ηD (%)
Power Gain, GP (dB)
17
70
18
VDS = 3.6 V
VDS = 4.5 V
25
20
15
VDS = 6.0 V
800
VDS = 4.5 V
700
600
500
VDS = 3.6 V
400
300
200
10
100
5
0
5
10
15
20
Input Power, PIN (dBm)
25
0
0
5
10
15
20
Input Power, PIN (dBm)
25
Drain Efficiency, ηD (%)
Power Gain, Drain Efficiency
vs. Drain Voltage
TMF8901F
Output Power, Power Gain, Drain Efficiency
vs. Input Power
60
25
50
ηD
POUT
20
40
GP
15
30
10
20
5
10
0
0
5
10
15
20
Output Power, POUT (dBm)
Power Gain, GP (dB)
30
80
f = 470 MHz
Iidle = 50 mA
VDS = 6.0 V
35
70
Drain Efficiency, ηD (%)
35
Output Power, POUT (dBm)
Power Gain, GP (dB)
40
80
f = 470 MHz
Iidle = 200 mA
VDS = 3.6 V
70
30
60
POUT
25
50
ηD
20
GP
15
30
10
20
5
10
0
0
25
40
0
5
10
15
20
0
25
Input Power, PIN (dBm)
Input Power, PIN (dBm)
□ Test Circuit Schematic Diagram
VGG
R1
R=6.8 kOhm
C6
C=100 nF
C7
C=10 nF
C5
C=10 nF
C8
C=100 nF
VDD
L2
L=100 nH
R=
C1
C=2.2 nF
L1
M odel=0.4x2.0x6T
T L1
Subst="M Sub1"
W=1.37 m m
L=22 m m
T M F8901F
P_IN
R2
R=56 Ohm
C2
C=24 pF
C9
C=2.2 nF
Test Board : 0.8mm FR4 glass epoxy
C4
C=2.2 nF
T L2
Subst="M Sub1"
W=1.37 m m
L=15 m m
P_OUT
C3
C=18 pF
Drain Efficiency, ηD (%)
40