THN5702F Semiconductor SiGe NPN Transistor Unit in mm SOT-89 □ Applications - VHF and UHF wide band amplifier 3 □ Features 4 - Medium power(800mW, 1W) application - Power gain 2 1 GP = 14 dB at VCE = 3.6 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 4.5 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 6.0 V, f = 460 MHz, PIN = 0 dBm GP = 16 dB at VCE = 3.0 V, f = 434 MHz, PIN = 0 dBm - Output power POUT = 29 dBm at VCE = 3.6 V, ICQ = 30 mA, f = 460 MHz POUT = 30 dBm at VCE = 4.5 V, ICQ = 50 mA, f = 460 MHz POUT = 31 dBm at VCE = 6.0 V, ICQ = 30 mA, f = 460 MHz Pin Configuration POUT = 25 dBm at VCE = 3.0 V, ICQ = 50 mA, f = 434 MHz 1. Base 2. Emitter 3. Collector 4. Emitter □ Absolute Maximum Ratings (TA = 25 ℃) Symbol Ratings Unit Collector to Base Breakdown Voltage BVCBO 15 V Collector to Emitter Breakdown Voltage BVCEO 10 V Emitter to Base Breakdown Voltage BVEBO 1.5 V Collector Current IC 800 mA Total Power Dissipation Ptot 1.5 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -65 ~ 150 ℃ Parameter 1 THN5702F □ Thermal Characteristics Symbol Parameter Rth j-a Thermal Resistance from Junction to Ambient Value Unit 80 K/W □ Electrical Characteristics (TA = 25 ℃) Parameter Symbol Test Conditions Min. Typ. Max. Unit ICBO VCB = 13 V, IE = 0 mA - - 2.5 ㎂ ICEO VCE = 7 V, IB = 0 mA - - 1.5 ㎂ Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA - - 1.5 ㎂ DC Current Gain hFE VCE = 4.5 V, IC = 150 mA 40 Power Gain GP VCE = 3.6 V, IC = 30 mA(RF off), f = 460 MHz, PIN=0dBm 12 14 - dB VCE = 4.5 V, IC = 50 mA(RF off), f = 460 MHz, PIN=0dBm 13 15 - dB VCE = 6.0 V, IC = 30 mA(RF off), f = 460 MHz, PIN=0dBm 13 15 - dB VCE = 3.0 V, IC = 50 mA(RF off), f = 434 MHz, PIN=0dBm 14 16 - dB VCE = 3.6 V, IC = 30 mA(RF off), f = 460 MHz, PIN=15dBm 27 29 - dBm VCE = 4.5 V, IC = 50 mA(RF off), f = 460 MHz, PIN=15dBm 28 30 - dBm VCE = 6.0 V, IC = 30 mA(RF off), f = 460 MHz, PIN=15dBm 29 31 - dBm VCE = 3.0 V, IC = 50 mA(RF off), f = 434 MHz, PIN=10dBm 23 25 - dBm VCB = 4.5 V, IE = 0 mA, f = 1 MHz - 6.5 8.0 Collector Cut-off Current Output Power POUT Reverse Transfer Capacitance Cre 300 pF □ hFE Classification Marking PC1 PC2 hFE Value 40 - 200 170 - 300 2 THN5702F □ Typical Characteristics ( TA = 25℃, unless otherwise specified) Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance, Cre (pF) Collector Current vs. Base to Emitter Voltage Collector Current, IC [mA] 100 VCE = 4.5 V 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 12 f = 1 MHz 11 10 9 8 7 6 5 4 0 Base to Emitter Voltage, VBE [V] 2 3 4 5 7 8 Collector Current vs. Collector to Emitter Voltage 0.9 150 VCE = 4.5 V 0.8 Collector Current, IC (A) 125 100 75 50 0.7 8 mA 0.6 6 mA 0.5 0.4 4 mA 0.3 IB = 2 mA 0.2 25 0 0.01 6 Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current DC Current Gain, hFE 1 0.1 0.0 0.1 Collector Current, IC (A) 1 0 1 2 3 4 5 6 7 Collector to Emitter Voltage, VCE (V) 3 THN5702F □ Application Information ( at f = 460 MHz ) Operation Mode f (MHz) VCE (V) POUT (dBm) GP (dB) ηC (%) CW, class-AB 460 3.6 29.0 14.0 54.9 Output Power or Power Gain vs. Input Power Collector Current or Power Added Efficiency vs. Input Power 0.8 28 35 GP 20 16 12 15 8 10 0 2 4 6 8 10 12 14 70 0.6 60 0.5 0.4 40 0.3 30 IC 0.2 20 10 0.0 0 2 4 6 8 10 12 14 0 16 Input Power, PIN (dBm) Input Power, PIN (dBm) Operation Mode f (MHz) VCE (V) POUT (dBm) GP (dB) ηC (%) CW, class-AB 460 6.0 31.4 16.4 43.2 Output Power or Power Gain vs. Input Power Collector Current or Power Added Efficiency vs. Input Power 30 20 GP 25 16 20 12 15 8 10 0 2 4 6 8 10 12 14 Input Power, PIN (dBm) 16 4 18 Collector Current, IC (A) 24 Power Gain, GP (dB) 35 0.7 70 0.6 60 50 0.5 IC 0.4 40 ηC 0.3 30 0.2 20 0.1 10 0.0 0 2 4 6 8 10 12 14 16 Power Added Efficiency, ηC (%) f = 460 MHz, VCE = 6.0 V, ICQ = 50 mA f = 460 MHz, VCE = 6.0 V, ICQ = 50 mA POUT 80 0.8 28 40 Output Power, POUT (dBm) 50 ηC 0.1 4 16 5 0.7 Power Added Efficiency, ηC (%) 20 Collector Current, IC (A) POUT Power Gain, GP (dB) Output Power, POUT (dBm) 24 30 25 80 f = 460 MHz, VCE = 3.6 V, ICQ = 30 mA f = 460 MHz, VCE = 3.6 V, ICQ = 30 mA 0 18 Input Power, PIN (dBm) 4 THN5702F □ Application Information ( at f = 460 MHz ) Operation Mode f (MHz) VCE (V) POUT (dBm) GP (dB) ηC (%) CW, class-AB 460 4.5 30.0 15.0 50.8 Output Power or Power Gain vs. Input Power Collector Current or Power Added Efficiency vs. Input Power 40 0.8 28 GP 16 20 12 15 8 10 0 2 4 6 8 10 12 14 16 70 0.6 60 0.5 50 ηC 0.4 0.3 30 0.2 20 0.1 10 0.0 4 18 0 2 Output Power or Power Gain vs. Input Power 40 28 20 POUT GP 16 20 12 15 8 10 8 10 12 14 Input Power, PIN (dBm) 16 4 18 Collector Current, IC (A) 30 6 10 12 14 16 0.8 Power Gain, GP (dB) Output Power, POUT (dBm) 24 4 8 0 18 80 f = 460 MHz, VCE = 4.5 V, ICQ = 50 mA 35 2 6 Collector Current or Power Added Efficiency vs. Input Power f = 460 MHz, VCE = 4.5 V, ICQ = 50 mA 0 4 Input Power, PIN (dBm) Input Power, PIN (dBm) 25 40 IC 0.7 70 0.6 60 0.5 50 ηC 0.4 40 IC 0.3 30 0.2 20 0.1 10 0.0 0 2 4 6 8 10 12 14 16 Power Added Efficiency, ηC (%) 25 0.7 Power Added Efficiency, ηC (%) 20 POUT Collector Current, IC (A) 24 Power Gain, GP (dB) Output Power, POUT (dBm) 35 30 80 f = 460 MHz, VCE = 4.5 V, ICQ = 5 mA f = 460 MHz, VCE = 4.5 V, ICQ = 5 mA 0 18 Input Power, PIN (dBm) 5 THN5702F □ Application Information ( f = 434 MHz ) Operation Mode f (MHz) VCE (V) POUT (dBm) GP (dB) ηC (%) CW, class-AB 434 2.2 24 14 38 Output Power or Power Gain vs. Input Power Collector Current or Power Added Efficiency vs. Input Power 35 28 0.6 24 0.5 60 POUT 16 20 GP 12 0 2 4 6 8 40 ηC 0.3 30 0.2 20 IC 8 0.1 4 10 12 14 16 0.0 10 5 0.4 10 0 2 Output Power or Power Gain vs. Input Power 60 POUT 16 20 GP Collector Current, IC (A) 20 25 Power Gain, GP (dB) Output Power, POUT (dBm) f = 434 MHz, VCE = 2.2 V, ICQ = 50 mA 24 30 0.5 0.3 30 0.2 20 10 8 0.1 4 16 0.0 8 10 12 Input Power, PIN (dBm) 14 40 ηC 12 5 50 0.4 15 6 0 10 12 14 16 0.6 f = 434 MHz, VCE = 2.2 V, ICQ = 50 mA 4 8 Collector Current or Power Added Efficiency vs. Input Power 28 35 2 6 Input Power, PIN (dBm) Input Power, PIN (dBm) 0 4 IC 10 0 2 4 6 8 10 12 14 Power Added Efficiency, ηC (%) 15 50 Collector Efficiency, ηC (%) 20 25 Collector Current, IC (A) f = 434 MHz, VCC = 2.2 V, ICQ = 5 mA Power Gain, GP (dB) Output Power, POUT (dBm) f = 434 MHz, VCC = 2.2 V, ICQ = 5 mA 30 0 16 Input Power, PIN (dBm) 6 THN5702F □ Application Information ( f = 434 MHz ) Operation Mode f (MHz) VCE (V) POUT (dBm) GP (dB) ηC (%) CW, class-AB 434 3.0 25 15 47 Output Power or Power Gain vs. Input Power Collector Current or Power Added Efficiency vs. Input Power 25 20 POUT 16 GP 12 15 Collector Current, IC (A) 24 Power Gain, GP (dB) 8 10 5 0 2 4 6 8 10 12 14 0.7 70 0.6 60 0.5 40 0.4 30 0.3 IC 0.2 20 0.1 10 0.0 4 16 0 2 Input Power, PIN (dBm) 35 GP 16 15 12 10 8 5 6 8 10 12 Input Power, PIN (dBm) 14 4 16 Collector Current, IC (A) 20 Power Gain, GP (dB) Output Power, POUT (dBm) POUT 4 10 12 14 0 16 80 f = 434 MHz, VCE = 3.0 V, ICQ = 50 mA 24 2 8 0.8 f = 434 MHz, VCE = 3.0 V, ICQ = 50 mA 30 0 6 Collector Current or Power Added Efficiency vs. Input Power 28 20 4 Input Power, PIN (dBm) Output Power or Power Gain vs. Input Power 25 50 ηC 0.7 70 0.6 60 0.5 50 ηC 0.4 40 IC 0.3 30 0.2 20 0.1 10 0.0 0 2 4 6 8 10 12 14 Power Added Efficiency, ηC (%) Output Power, POUT (dBm) f = 434 MHz, VCC = 3.0 V, ICQ = 5 mA Power Added Efficiency, ηC (%) f = 434 MHz, VCC = 3.0 V, ICQ = 5 mA 30 20 80 0.8 28 35 0 16 Input Power, PIN (dBm) 7 THN5702F □ Test Circuit Schematic Diagram ( f = 460 MHz, 434MHz ) VBE VCE 1 nF 100 pF 100 pF 1 nF 0.5 X 1.5 X 6T 100 nH RF IN 100 pF W=1.3 mm L=32 mm W=1.3 mm L=6.8 mm W=1.3 mm L=16 mm W=1.3 mm L=31 mm 100 pF RF OUT W=1.3 mm L=1.8 mm 15 pF 13 pF 27 pF □ Evaluation Board ( f = 460 MHz, 434 MHz ) VBE VCE RF OUT RF IN Notes 1. FR4 glass epoxy: dielectric constant = 4.5, thickness = 0.8 mm 2. Evaluation board dimension = 119 ⅹ 50 mm2 8