THN6702F Semiconductor SiGe NPN Transistor Unit in mm SOT-89 □ Applications - VHF and UHF wide band amplifier 3 □ Features 4 - Medium power application (2W) - Power gain 2 1 GP = 15 dB at VCE = 6.0 V, f = 460 MHz, PIN = 0 dBm Output power POUT = 33.5 dBm at VCE = 6.0 V, ICQ = 30 mA, f = 460 MHz Pin Configuration 1. Base 2. Emitter 3. Collector 4. Emitter □ Absolute Maximum Ratings (TA = 25 ℃) Symbol Ratings Unit Collector to Base Breakdown Voltage BVCBO 15 V Collector to Emitter Breakdown Voltage BVCEO 10 V Emitter to Base Breakdown Voltage BVEBO 1.5 V Collector Current IC 900 mA Total Power Dissipation Ptot 2 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -65 ~ 150 ℃ Parameter 1 THN6702F □ Thermal Characteristics Symbol Parameter Rth j-a Thermal Resistance from Junction to Ambient Value Unit 65 K/W □ Electrical Characteristics (TA = 25 ℃) Parameter Symbol Test Conditions Min. Typ. Max. Unit ICBO VCB = 10 V, IE = 0 mA - - 2.5 ㎂ ICEO VCE = 7 V, IB = 0 mA - - 1.5 ㎂ Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA - - 1.5 ㎂ DC Current Gain hFE VCE = 3 V, IC = 100 mA 60 Power Gain GP VCE = 6.0 V, IC = 30 mA (RF off), f = 460 MHz, PIN=0dBm 13 15 - dB POUT VCE = 6.0 V, IC = 30 mA (RF off), f = 460 MHz, PIN=20dBm 32 33.5 - dBm ηC VCE = 6.0 V, IC = 30 mA (RF off), f = 460 MHz, PIN=20dBm 55 - % Collector Cut-off Current Output Power Collector Efficiency 180 □ hFE Classification Marking PD1 hFE Value 60 -180 2 THN6702F □ Application Information ( at f = 460 MHz ) Operation Mode f (MHz) VCE (V) POUT (dBm) GP (dB) ηC (%) CW, class-AB 460 6.0 33.5 13.5 55 Output Power, Collector Current, Collector Efficiency vs. Input Power 30 800 POUT 25 600 IC 20 400 15 200 ηC 10 Collector Efficiency, ηC (%) 1000 VCE = 6V, f = 460 MHz IC(set) = 30mA Collector Current, IC (mA) , Output Power, POUT (dBm) 35 0 0 5 10 15 20 Input Power, PIN (dBm) 3 THN6702F □ Test Circuit Schematic Diagram ( f = 460 MHz ) VBE VCE 1 nF 100 pF 100 pF 1 nF 0.5 X 1.5 X 6T 100 nH RF IN 100 pF W=1.3 mm L=32 mm W=1.3 mm L=6.8 mm W=1.3 mm L=16 mm W=1.3 mm L=31 mm 100 pF RF OUT W=1.3 mm L=1.8 mm 15 pF 13 pF 27 pF □ Evaluation Board ( f = 460 MHz ) VBE VCE RF OUT RF IN Notes 1. FR4 glass epoxy: dielectric constant = 4.5, thickness = 0.8 mm 2. Evaluation board dimension = 119 ⅹ 50 mm2 4