TGS2302 4 - 20 GHz VPIN SPDT Switch Key Features • 4-20 GHz High Isolation SPDT • < 0.9 dB Typical Insertion Loss • 35 dB Nominal Isolation • 12 dB Typical Return Loss • On-Chip Bias Network • DC blocked at RF ports • Chip dimensions: 2.24 x 1.63 x 0.10 mm (0.087 x 0.063 x 0.004 in) Primary Applications Measured Fixtured Data Icontrol = ± 20mA EW Receivers • Radar • Communications Systems Product Description 0 Insertion Loss (dB ) • The TriQuint TGS2302 is a 4-20 GHz Single Pole Double Throw (SPDT) Switch. This part is designed using TriQuint’s proven standard VPIN production process. -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 4 6 8 10 12 14 16 18 20 The TGS2302 provides a nominal 0.9 dB insertion loss, 12 dB return loss, and 35 dB isolation. Frequency (GHz) The TGS2302 integrates DC blocking capacitors on all ports and includes decoupled DC bias pads to reduce the number of off-chip components. 0 Isolation (dB) -10 -20 -30 The part is ideally suited for EW receivers, radar, and communication systems. -40 -50 -60 Evaluation Boards are available upon request. -70 4 6 8 10 12 14 Frequency (GHz) 16 18 20 Lead-free and RoHS compliant. Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 [email protected] 1 May 2006 TGS2302 TABLE I MAXIMUM RATINGS Symbol V + - V I + Parameter 1/ Value Notes Positive Supply Voltage +3 V 2/, 3/ Negative Supply Voltage -3 V Positive Supply Current (Quiescent) 22 mA 2/ 3/ PIN Input Continuous Wave Power 24 dBm 3/ PD Power Dissipated 0.38 W 3/ 4/ TM 0 Mounting Temperature (30 Seconds) TSTG 320 C -65 to 150 0C Storage Temperature 1/ These ratings represent the maximum operable values for this device. 2/ V+max and I+max are both per bias pad. 3/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 4/ When operated at this bias condition with a base plate temperature of 70 C, the median life is reduced to TBD hours. 0 TABLE II FUNCTION TABLE STATE RF-A RF-B Icontrol-A* Icontrol-B* 1 Low-Loss Isolated +20 mA -20mA 2 Isolated Low-Loss -20mA +20 mA * Typical DC voltage to achieve ±20 mA at Icontrol node is 2.6-2.7 V TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 [email protected] 2 May 2006 TGS2302 TABLE III DC PROBE TABLE (TA = 25 °C, Nominal) SYMBOL PARAMETER TYPICAL UNITS RF @ IF = 10-20mA Forward On-Resistance 3 Ω BR @ IR = 10 µA Breakdown Voltage -40 V TABLE IV RF CHARACTERIZATION TABLE (TA = 25 °C, Nominal) Icontrol = ± 20mA PARAMETER THROUGH PATH IDENTIFICATION TEST CONDITION NOMINAL UNITS Insertion Loss RF Input to RF Output A f = 4 – 20 GHz 0.9 dB Isolation RF Input to RF Output B f = 4 – 20 GHz 35 dB Input Return Loss RF Input to RF Output A RF Input to RF Output B f = 4 – 20 GHz 12 dB Output Return Loss RF Input to RF Output A RF Input to RF Output B f = 4 – 20 GHz 12 dB TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 [email protected] 3 May 2006 TGS2302 Measured Fixtured Data Bias Conditions: Icontrol =± 20 mA 0 Insertion Loss (dB) -0.3 -0.6 -0.9 -1.2 -1.5 -1.8 -2.1 -2.4 -2.7 -3 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) 0 Isolation (dB) -10 -20 -30 -40 -50 -60 -70 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 [email protected] 4 May 2006 TGS2302 Measured Fixtured Data Bias Conditions: Icontrol =± 20 mA 0 Input Return Loss (dB) -5 Output -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) 0 Insertion Loss (dB) -0.2 4 GHz 8 GHz 12 GHz -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 8 10 12 14 16 18 20 22 24 Input Power (dBm) TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 [email protected] 5 May 2006 TGS2302 Equivalent Schematic Icontrol A Icontrol B RF output A RF Output B RF Input TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 [email protected] 6 May 2006 TGS2302 Mechanical Drawing 1.118 [0.044] 1.630 [0.064] 2.106 [0.082] TQS 2006 RC A RC A 1.447 [0.056] 3 2 1.478 [0.058] A VPIN TES T DIODE 4 5 1 0.676 [0.026] 0.975 [0.038] 0.676 [0.026] 0.000 [0.000] 0.000 [0.000] 0.173 [0.007] 2.062 [0.080] 2.240 [0.087] Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC Bond Bond Bond Bond Bond pad pad pad pad pad #1 #2 #3 #4 #5 (RF Output A) (RF Input) (Icontrol-A) (Icontrol-B) (RF Output B) 0.193 x 0.243 (0.008 x 0.010) 0.243 x 0.193 (0.010 x 0.008) 0.105 x 0.132 (0.004 x 0.005) 0.105 x 0.132 (0.004 x 0.005) 0.193 x 0.243 (0.008 x 0.010) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 [email protected] 7 May 2006 TGS2302 Assembly Drawing RF Input Icontrol-A Icontrol-B TQS 2006 RF Output A RF Output B Note: ± 20mA control lines (Icontrol-A, Icontrol-B) use on-chip resistors for diode current control. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 [email protected] 8 May 2006 TGS2302 Assembly Process Notes Reflow process assembly notes: • • • • • Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 [email protected] 9 May 2006