TRIQUINT TGA2520

Advance Product Information
12-16 GHz High Linearity Amplifier
TGA2520
Key Features and Performance
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Primary Applications
Preliminary Measured Data
Bias Conditions: Vd=6 V Id=850 mA
•
•
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40
35
S-Parameters (dB)
30
Gain
IRL
ORL
25
20
15
The TriQuint TGA2520 MMIC is an
extremely linear, high gain amplifier,
capable of 1 Watt output power at P1dB
for the frequency range of 12 – 16 GHz.
This performance makes this amplifier
ideally suited for Point to Point Radios
and current Ku-Band satellite ground
terminal applications. The TGA2520
utilizes TriQuint’s robust 0.5um power
pHEMT process coupled with 3 layer
Metal Inteconnect (3MI) technology. The
TGA2520 provides the high power
transmit function in an extremely compact
(< 3.5mm2) chip footprint.
5
0
-5
-10
-15
-20
13
14
15
16
Freq (GHz)
TOI @ 20dBm/tone output,
P1dB (dBm)
45
43
41
39
37
TOI
P1dB
35
33
31
29
27
25
12
13
14
Freq (GHz)
15
Point-to-Point Radio
VSAT
Ku Band Sat-Com
Product Description
10
12
31 dBm Midband Pout
33 dB Nominal Gain
TOI > 40 dBm
0.5 µm pHEMT 3MI Technology
Bias Conditions: 6 V, 850mA
Chip dimensions: 2.5 x 1.4 x 0.1 mm
(98 x 55 x 4 mils)
16
The combination of a high-yield process,
electrical performance, and compact die
size is exactly what is required to support
the aggressive pricing targets required for
low-cost transmit modules. Each device
is 100% DC and RF tested on–wafer to
ensure performance compliance. The
device is available in chip form.
Note: This device is early in the characterization process prior to finalizing all electrical test specifications. Specifications are subject to change
without notice.
1
TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 [email protected]
June
2006
TGA2520
TABLE I
MAXIMUM RATINGS
Symbol
V
Value
Notes
8V
2/
Positive Supply Voltage
-
Negative Supply Voltage Range
-5V to 0V
Positive Supply Current (under RF Drive)
1300 mA
V
I
Parameter 1/
+
+
IG
Gate Supply Current Range
PIN
Input Continuous Wave Power
PD
Power Dissipation
TCH
TM
TSTG
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
2/
-7 to 56 mA
23.2 dBm
2/
6W
2/ 3/
0
150 C
3/ 4/ 5/
0
320 C
-65 to 150 0C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power
shall not exceed PD.
3/
When operated at this bias condition with a base plate temperature of 70° C the
median life is reduced to 1.0 E+6.
4/
These ratings apply to each individual FET.
5/
Junction operating temperature will directly affect the device median time to failure
(TM). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
2
TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 [email protected]
June
2006
TGA2520
TABLE II
RF CHARACTERIZATION TABLE
(TA = 25°°C, Nominal)
(Vd =6 V, Id = 850mA ± 5%)
SYMBOL
PARAMETER
TEST
CONDITION
Gain
Small Signal Gain
IRL
Input Return Loss
ORL
Output Return Loss
PWR
Output Power @
Pin = +5 dBm
LIMITS
MIN TYP MAX
UNITS
33
dB
8
dB
12
dB
31
dBm
F = 12-16
F = 12-16
F = 12-16
F = 12-16
Note: Table II Lists the RF Characteristics of typical devices as determined by
fixtured measurements.
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITION
TCH (°°C)
Rθjc
(°°C/W)
MTTF
(HRS)
Rθjc Thermal Resistance
(Channel to Backside)
VD = 6 V
ID = 850 mA
PD = 5.1 W
138
13.33
2.9 E+6
Rθjc Thermal Resistance
(Channel to Backside)
Vd = 6V
Id = 1200 mA (under drive)
Pdiss = 6 W
Pout = 1.2 W (RF)
150
13.33
1.0 E+6
Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at
70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC
power is dissipated.
3
TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 [email protected]
June
2006
TGA2520
Typical Fixtured Performance
40
35
Gain (dB)
30
25
20
15
10
5
0
10
11
12
13
14
15
16
17
18
19
Freq (GHz)
0
Return Loss (dB)
IRL
ORL
-5
-10
-15
-20
10
11
12
13
14
15
16
17
18
19
Freq (GHz)
4
TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 [email protected]
June
2006
TGA2520
Typical Fixtured Performance
36
35
34
P1dB (dBm)
33
32
31
30
29
28
27
26
25
24
11
12
13
14
15
16
17
Freq (GHz)
TOI (dBm) @ 20dBm/tone output
45
43
41
39
37
35
33
31
29
27
25
11
12
13
14
15
16
17
18
Freq (GHz)
5
TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 [email protected]
June
2006
TGA2520
Typical Fixtured Performance
Average IMD3/tone (dBm)
20
14
8
2
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
-4
-10
-16
-22
-28
-34
-40
-46
10
12
14
16
18
20
22
24
26
28
30
32
Fundamental Pout/tone (dBm)
6
TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 [email protected]
June
2006
TGA2520
Mechanical Drawing
7
TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 [email protected]
June
2006
TGA2520
Chip Assembly & Bonding Diagram
Vd
0.01 pF
100pF
Off chip
R=10Ω
Ω
Off chip
C=0.1µ
µF
Input TFN
Output TFN
Vg
Off chip
R=10Ω
Ω
100pF
Off chip
C=0.1µ
µF
Typical Vg ≈ -0.5 V
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
8
TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 [email protected]
June
2006
TGA2520
Assembly Process Notes
Reflow process assembly notes:
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Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
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Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
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Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200°C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
9
TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 [email protected]
June
2006