Advance Product Information November 9, 2004 Ku Band 6.5 W Power Amplifier TGA2514-EPU Key Features • • • • • • • • • • • Frequency Range: 13 - 18 GHz 38.5 dBm Nominal Psat from 13.75 - 14 GHz 38 dBm Nominal Psat from 13-16 GHz 37.5 dBm Nominal Psat from 16-18 GHz 33 dBc IMD3 @ 27 dBm Pout/tone @ 14 GHz 24 dB Nominal Gain 12 dB Nominal Return Loss 0.25-µm 3MI pHEMT Technology Bias Conditions: 8 V @ 2.6 A Idq Chip size: 2.87 x 3.90 x .10 mm (0.113 x 0.154 x 0.004) Primary Applications Measured Fixtured Data Bias Conditions: Vd = 8 V, Idq = 2.6A The TGA2514-EPU provides a nominal 38 dBm of saturated power with a small signal gain of 24 dB. Typical return loss is 14 dB. 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 8 The TGA2514-EPU is 100% DC and RF tested on-wafer to ensure performance compliance. 10 12 14 16 18 20 22 Frequency (GHz) 40 39 38 Psat (dBm) 37 36 35 34 33 32 31 30 29 28 12 13 14 15 16 17 18 19 20 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Return Loss (dB) The TriQuint TGA2514-EPU is a compact 6.5 W Ku-band Power Amplifier which operates from 13-18 GHz. The TGA2514-EPU is designed using TriQuint’s proven standard 0.25-µm gate pHEMT production process. Ku band VSAT Transmitter Point to Point Radio Gain (dB) Product Description • • Advance Product Information November 9, 2004 TGA2514-EPU TABLE I MAXIMUM RATINGS Symbol Parameter 1/ + Positive Supply Voltage - Negative Supply Voltage Range V V + I Positive Supply Current | IG | Gate Supply Current PIN Input Continuous Wave Power PD Power Dissipation TCH Operating Channel Temperature Value Notes 9 V 2/ -5V TO 0V 4A 2/ 113 mA 30.3 dBm 2/ 20.8 W 2/, 3/ 0 150 C 4/, 5/ 0 TM Mounting Temperature (30 Seconds) 320 C TSTG Storage Temperature -65 to 150 C 0 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ When operated at this bias condition with a base plate temperature of 70 C, the median life is 1E+6 hours. 4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ These ratings apply to each individual FET. 0 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 9, 2004 TABLE II RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (Vd = 8V, Id = 2.6 A) TGA2514-EPU SYMBOL PARAMETER TEST CONDITION TYPICAL UNITS Gain Small Signal Gain f = 13-18 GHz 24 dB IRL Input Return Loss f = 13-18 GHz 12 dB ORL Output Return Loss f = 13-18 GHz 12 dB Psat Saturated Power f = 13-16 GHz f = 16-18 GHz 38 37.5 dBm TOI Third Order Intercept @ Pout/tone = 27dBm f = 14 GHz 44 dBm IMD3 Output IMD3 @ Pout/tone = 27 dBm f = 14 GHz 33 dBc Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. TABLE III THERMAL INFORMATION Parameter RθJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 8 V ID = 2.6 A Pdiss = 20.8 W TCH (oC) RTJC (qC/W) TM (HRS) 150 3.9 1 E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 9, 2004 TGA2514-EPU Measured Fixture Data 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 8 10 12 14 16 18 20 Return Loss (dB) Gain (dB) Bias Conditions: Vd = 8 V, Idq = 2.6A 22 Frequency (GHz) 40 Output Power (dBm) 39 38 37 36 35 34 33 Psat 32 P1dB 31 30 29 28 12 13 14 15 16 17 18 19 20 Frequency (GHz) 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 9, 2004 TGA2514-EPU Measured Fixture Data Bias Conditions: Vd = 8 V, Idq = 2.6A 40 13 GHz 13.5 GHz 14 GHz 14.5 GHz 15 GHz 15.5 GHz 16 GHz 16.5 GHz 17 GHz 17.5 GHz 18 GHz Pout(dBm) 35 30 25 20 4 6 8 10 12 14 16 18 20 Pin (dBm) 4 Drain Current (A) 3.8 3.6 13GHz 13.5 GHz 14 GHz 14.5 GHz 15GHz 15.5GHz 16 GHz 16.5GHz 17 Ghz 17.5 GHz 18 GHz 3.4 3.2 3 2.8 2.6 2.4 2.2 2 4 6 8 10 12 14 16 18 20 Pin (dBm) 26 13GHz 13.5 GHz Power Gain (dB) 24 14 GHz 14.5 GHz 22 15GHz 15.5GHz 16 GHz 20 16.5GHz 17 Ghz 18 17.5 GHz 18 GHz 16 4 6 8 10 12 14 16 18 20 Pin (dBm) 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 9, 2004 TGA2514-EPU Measured Fixture Data Bias Conditions: Vd = 8 V, Idq = 2.6A 50 13 GHz TOI (dBm) 48 13.5 GHz 46 14 GHz 44 14.5GHz 42 15 GHz 15.5 GHz 40 16 GHz 38 16.5 GHz 36 17 GHz 34 17.5 GHz 32 18 GHz 30 12 14 16 18 20 22 24 26 28 30 32 Output Power/Tone (dBm) 60 13 GHz 13.5 GHz 14 GHz 14.5GHz 15 GHz 15.5 GHz 16 GHz 16.5 GHz 17 GHz 17.5 GHz 18 GHz IMD3 (dBc) 50 40 30 20 10 0 12 14 16 18 20 22 24 26 28 30 32 Output Power/Tone (dBm) 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 9, 2004 TGA2514-EPU Recommended Chip Assembly Diagram 10 : Vg Vd 1 PF 1 PF 20 mil ribbon 10 : 1 PF Vg Vd 1 PF Notes: 1. Vg can be connected from either side, but 100 pf, 0.01 uf , 1uf caps and 10 ohm resistor are needed for both sides. 2. Vd connection must be biased from both sides. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 9, 2004 TGA2514-EPU 2.732 (0.108) 2.358 (0.093) 3.903 (0.154) 1.113 (0.044) 0.722 (0.028) Mechanical Drawing 3.742 (0.147) 2 3.748 (0.148) 3 4 2.764 (0.109) 5 1.136 (0.045) 1 0.161 (0.006) 0.148 (0.006) 7 8 6 2.872 (0.113) 2.358 (0.093) 1.113 (0.044) 0.722 (0.028) 0.000 (0.000) 0.142 (0.006) 0.000 (0.000) Units: Millimeters (inches) Thickness: 0.100 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chip size +/- 0.05 (0.002) GND IS BACKSIDE OF MMIC Bond pad #1 Bond pads #2, 8 Bond pads #3, 7 Bond pads # 4, 6 Bond pad #5 RF Input Vg Vd Vd RF Output 0.096 x 0.200 (0.004 x 0.008) 0.098 x 0.098 (0.004 x 0.004) 0.198 x 0.100 (0.008 x 0.004) 0.296 x 0.178 (0.012 x 0.007) 0.096 x 0.200 (0.004 x 0.008) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 9, 2004 TGA2514-EPU Assembly Process Notes Reflow process assembly notes: • • • • • Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C (for 30 sec max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200°C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com