Advance Product Information October 28, 2005 32 - 45 GHz Wide Band Driver Amplifier TGA4521 Key Features • • • • • • • • Product Description The TriQuint TGA4521 is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint’s 0.15um power pHEMT production process. Frequency Range: 32 - 45 GHz 25 dBm Nominal Psat @ 38 GHz 24 dBm P1dB @ 38 GHz 16 dB Nominal Gain @ 38 GHz 33 dBm OTOI @ 16dBm/Tone Bias: 6 V @ 175 mA Idq 0.15 um 3MI pHEMT Technology Chip Dimensions 1.60 x 0.75 x 0.10 mm (0.063 x 0.030 x 0.004 in) Primary Applications • • • • Digital Radio Point-to-Point Radio Point-to-Multipoint Communications Military SAT-COM The TGA4521 nominally provides 25 dBm saturated output power, and 24 dBm output power at 1dB Gain compression @ 38 GHz. It also has typical gain of 16 dB. The TGA4521 is 100% DC and RF tested on-wafer to ensure performance compliance. 25 20 S-Parameters (dB) The part is ideally suited for low cost emerging markets such as Digital Radio, Point-to-Point Radio and Point-to-Multi Point Communications. Measured Fixtured Data Bias Conditions: Vd = 6 V, Idq = 175 mA Gain 15 10 5 0 IRL -5 -10 Lead-Free & RoHS compliant. ORL -15 32 34 36 38 40 42 44 46 48 46 48 Frequency (GHz) 27 Output Power (dBm) 26 Psat 25 24 P1dB 23 22 21 20 19 32 34 36 38 40 42 44 Frequency (GHz) Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 28, 2005 TGA4521 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 6.5 V 2/ Vd Drain Voltage Vg Gate Voltage Range Id Drain Current 350 mA 2/ 3/ Ig Gate Current 9 mA 3/ PIN Input Continuous Wave Power PD Power Dissipation -2 TO 0 V 20 dBm See note 4/ 0 TCH Operating Channel Temperature 150 C TM Mounting Temperature (30 Seconds) 320 0C TSTG Storage Temperature 2/ 5/ 6/ -65 to 150 0C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 0C – TBASE 0C) / 70 (0C/W) Where TBASE is the base plate temperature. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 28, 2005 TGA4521 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER TYPICAL UNITS Frequency Range 32 - 45 GHz Drain Voltage, Vd 6.0 V Drain Current, Id 175 mA Gate Voltage, Vg -0.7 V Small Signal Gain, S21 16 dB Input Return Loss, S11 6 dB Output Return Loss, S22 10 dB Output Power @ 1dB Gain Compression, P1dB 24 dBm Saturated Power, Psat 25 dBm OTOI @ 16dBm/tone 33 dBm TABLE III THERMAL INFORMATION PARAMETER RθJC Thermal Resistance (channel to Case) TEST CONDITIONS Vd = 6 V Id = 175 mA Pdiss = 1.05 W TCH O ( C) RTJC (qC/W) TM (HRS) 144 70 1.7E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 28, 2005 TGA4521 Measured Data Bias Conditions: Vd = 6 V, Idq = 175 mA 24 22 20 18 Gain (dB) 16 14 12 10 8 6 4 2 0 28 30 32 34 36 38 40 42 44 46 48 50 42 44 46 48 50 Frequency (GHz) 0 -2 IRL -4 Return Loss (dB) -6 -8 -10 -12 ORL -14 -16 -18 -20 -22 -24 28 30 32 34 36 38 40 Frequency (GHz) 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 28, 2005 TGA4521 Measured Data Bias Conditions: Vd = 6 V, Idq = 175 mA 28 P1dB Psat 27 Output Power (dBm) 26 25 24 23 22 21 20 19 18 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 Frequency (GHz) 26 400 Freq = 38 GHz 375 22 350 20 325 18 300 16 275 14 250 12 225 10 200 POUT GAIN IDS 8 6 IDS (mA) Pout (dBm) 24 175 150 4 125 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 Pin (dBm) 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 28, 2005 TGA4521 Measured Data Bias Conditions: Vd = 6 V, Idq = 175 mA, f=10MHz 38 36 OTOI (dBm) 34 32 30 28 37 GHz 26 38 GHz 39 GHz 24 40 GHz 22 6 8 10 12 14 16 18 20 22 24 Output Power / tone -10 -15 IMD3 (dBc) -20 -25 -30 -35 37 GHz -40 38 GHz 39 GHz -45 40 GHz -50 6 8 10 12 14 16 18 20 22 24 Output Power / tone 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 28, 2005 TGA4521 Mechanical Drawing 0.086 0.267 (0.003) (0.011) 1.167 (0.046) 0.346 (0.014) 1.316 (0.052) 1.490 (0.059) 0.750 (0.030) 0.651 (0.026) 0.651 (0.026) 0.353 (0.014) B A RC 0.217 (0.009) 0 0 0.113 (0.004) 0.793 (0.031) 1.485 1.600 (0.058) (0.063) Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND is back side of MMIC Bond pad #1 Bond pad #2 Bond pad #3, 9 Bond pad #4, 5, 7 Bond pad #6 Bond pad #8 (RF In) (N/C) (Vg) (Vd) (N/C) (RF Out) 0.100 x 0.200 0.081 x 0.100 0.108 x 0.108 0.108 x 0.108 0.091 x 0.084 0.100 x 0.200 (0.004 x 0.008) (0.003 x 0.004) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.003) (0.004 x 0.008) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 28, 2005 TGA4521 Recommended Chip Assembly Diagram Vd Vg 0.01 F 0.01 F 1.0 F 1.0 F 100pF 100pF TFN B A RC 100pF TFN (Alternative Vg) Vg 1.0 F 0.01 F Bias Conditions: Vd = 6 V Vg = ~ -0.7 V to get 175mA Id GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 28, 2005 TGA4521 Assembly Process Notes Reflow process assembly notes: • • • • • 0 Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com