Advance Product Information April 25, 2005 Q-band Power Amplifier TGA4043 Key Features • • • • • • Frequency Range: 40-45 GHz 29 dBm Nominal Pout @ P1dB 10 dB Nominal Gain 0.25 um pHEMT Technology Bias 7V @ 500 mA Chip Dimensions 3.08 mm x 3.14 x 0.10 mm (0.121 x 0.124 x 0.004 in) Primary Applications • • • Point to Point Radio Point to Multipoint Radio Military Communications Product Description 15 25 12 9 15 6 10 3 5 0 0 Input -3 -10 -9 -15 -20 Output -15 -25 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) 32 31 P1dB (dBm) The TGA4043 is 100% DC and RF tested on-wafer to ensure performance compliance. -5 -6 -12 The part is ideally suited for low cost emerging markets such as Point-to-Point Radio and Point-to-Multi Point Communications. 20 Gain 30 29 28 27 26 25 40 40.5 41 41.5 42 42.5 43 43.5 44 44.5 45 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Return Loss (dB) The TGA4043 provides a nominal 28 dBm of output power at 1 dB gain compression from 40-45 GHz with a small signal gain of 10 dB. Bias Conditions: Vd = 7V, Id = 500mA Gain (dB) The TriQuint TGA4043 is a compact High Power Amplifier MMIC for Q-band applications. The part is designed using TriQuint’s proven standard 0.25 um gate power pHEMT production process. Measured Fixtured Data Advance Product Information April 25, 2005 TGA4043 TABLE I MAXIMUM RATINGS 1/ SYMBOL + PARAMETER V Positive Supply Voltage V- Negative Supply Voltage Range I+ Positive Supply Current VALUE NOTES 8V 2/ -5V TO 0V 960 mA | IG | Gate Supply Current PIN Input Continuous Wave Power PD 2/ 56 mA 27 dBm 2/ Power Dissipation 4.6 W 2/, 3/ TCH Operating Channel Temperature 150 °C 4/, 5/ TM Mounting Temperature (30 Seconds) 320 °C TSTG -65 to 150 °C Storage Temperature 1/ These ratings represent the maximum operable values for this device. 2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life is 1 E+6 hours. 4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ These ratings apply to each individual FET. TABLE II DC PROBE TEST (TA = 25 °C, Nominal) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT Idss, Q1 Saturated Drain Current 40 188 mA G m, Q1 Transconductance 88 212 mS Pinch-off Voltage -1.5 -0.5 V Breakdown Voltage GateDrain Breakdown Voltage GateSource -30 -8 V -30 -8 V Vp, Q1,2, 3-6, 7, 8, 9-12 VBVGD, Q1,2 VBVGS, Q1 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information April 25, 2005 TGA4043 TABLE III RF CHARACTERIZATION TABLE (TA = 25 °C, Nominal) Vd = 7V, Id = 500 mA SYMBOL PARAMETER TEST CONDITION TYPICAL LIMITS UNITS Gain Small Signal Gain F = 40-45 GHz 10 dB IRL Input Return Loss F = 40-45 GHz 14.5 dB ORL Output Return Loss F = 40-45 GHz 12.5 dB Output Power @ 1dB Gain Compression F = 40-45 GHz 29 P1dB dBm TABLE IV THERMAL INFORMATION* Parameter RθJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 7 V ID = 500 mA Pdiss = 3.5 W TCH (oC) 130 RTJC (qC/W) TM (HRS) 17.3 5.9 E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information April 25, 2005 TGA4043 Measured Fixtured Data Bias Conditions: Vd = 7V, Id = 500mA 15 25 20 Gain 9 15 6 10 3 5 0 0 Input -3 -5 -6 -10 -9 -15 -12 Return Loss (dB) Gain (dB) 12 -20 Output -15 -25 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) 31 32 29 Output power (dBm) P1dB (dBm) 31 30 29 28 27 26 27 40 GHz 41 GHz 42 GHz 43 GHz 44 GHz 45 GHz 25 23 21 19 17 25 40 40.5 41 41.5 42 42.5 43 43.5 44 44.5 15 45 6 8 10 Frequency (GHz) 12 14 16 18 20 22 Input power (dBm) 16 40 GHz 41 GHz 14 42 GHz 43 GHz 44 GHz PAE (%) 12 10 45 GHz 8 6 4 2 0 6 8 10 12 14 16 18 20 22 24 Input power (dBm) 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com 24 Advance Product Information April 25, 2005 TGA4043 Mechanical Characteristics 8QLWVPLOOLPHWHUVLQFKHV 7KLFNQHVVUHIHUHQFHRQO\ &KLSHGJHWRERQGSDGGLPHQVLRQVDUHVKRZQWRFHQWHURIERQGSDG &KLSVL]HWROHUDQFH *1',6%$&.6,'(2)00,& %RQG3DG5),QSXW [[ %RQG3DG9J [[ %RQG3DG9G [[ %RQG3DG9J [[ %RQG3DG9G [[ %RQG3DG%\SDVV [[ %RQG3DG5)2XWSXW [[ %RQG3DG%\SDVV [[ %RQG3DG9G [[ %RQG3DG9J [[ %RQG3DG9G [[ %RQG3DG9J [[ GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information April 25, 2005 TGA4043 Recommended Assembly Diagram Vg 10 : P 1 F P 1 F 10 : Vd = 7V 0.01PF 100pF 100pF 100pF 100pF 0.01PF Vg Vd = 7V Note: We recommend 1µF caps on the bias lines to suppress possible low frequency oscillations. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information April 25, 2005 TGA4043 Assembly Process Notes Reflow process assembly notes: • • • • • Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com