TRIQUINT TGA4043

Advance Product Information
April 25, 2005
Q-band Power Amplifier
TGA4043
Key Features
•
•
•
•
•
•
Frequency Range: 40-45 GHz
29 dBm Nominal Pout @ P1dB
10 dB Nominal Gain
0.25 um pHEMT Technology
Bias 7V @ 500 mA
Chip Dimensions 3.08 mm x 3.14 x 0.10 mm
(0.121 x 0.124 x 0.004 in)
Primary Applications
•
•
•
Point to Point Radio
Point to Multipoint Radio
Military Communications
Product Description
15
25
12
9
15
6
10
3
5
0
0
Input
-3
-10
-9
-15
-20
Output
-15
-25
30
32
34
36
38
40
42
44
46
48
50
Frequency (GHz)
32
31
P1dB (dBm)
The TGA4043 is 100% DC and RF tested
on-wafer to ensure performance
compliance.
-5
-6
-12
The part is ideally suited for low cost
emerging markets such as Point-to-Point
Radio and Point-to-Multi Point
Communications.
20
Gain
30
29
28
27
26
25
40
40.5
41
41.5
42
42.5
43
43.5
44
44.5
45
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Return Loss (dB)
The TGA4043 provides a nominal 28
dBm of output power at 1 dB gain
compression from 40-45 GHz with a small
signal gain of 10 dB.
Bias Conditions: Vd = 7V, Id = 500mA
Gain (dB)
The TriQuint TGA4043 is a compact High
Power Amplifier MMIC for Q-band
applications. The part is designed using
TriQuint’s proven standard 0.25 um gate
power pHEMT production process.
Measured Fixtured Data
Advance Product Information
April 25, 2005
TGA4043
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
+
PARAMETER
V
Positive Supply Voltage
V-
Negative Supply Voltage Range
I+
Positive Supply Current
VALUE
NOTES
8V
2/
-5V TO 0V
960 mA
| IG |
Gate Supply Current
PIN
Input Continuous Wave Power
PD
2/
56 mA
27 dBm
2/
Power Dissipation
4.6 W
2/, 3/
TCH
Operating Channel Temperature
150 °C
4/, 5/
TM
Mounting Temperature (30 Seconds)
320 °C
TSTG
-65 to 150 °C
Storage Temperature
1/
These ratings represent the maximum operable values for this device.
2/
Current is defined under no RF drive conditions. Combinations of supply voltage, supply
current, input power, and output power shall not exceed PD.
3/
When operated at this power dissipation with a base plate temperature of 70 °C, the median
life is 1 E+6 hours.
4/
Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
5/
These ratings apply to each individual FET.
TABLE II
DC PROBE TEST
(TA = 25 °C, Nominal)
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
Idss, Q1
Saturated Drain Current
40
188
mA
G m, Q1
Transconductance
88
212
mS
Pinch-off Voltage
-1.5
-0.5
V
Breakdown Voltage GateDrain
Breakdown Voltage GateSource
-30
-8
V
-30
-8
V
Vp, Q1,2, 3-6, 7, 8, 9-12
VBVGD, Q1,2
VBVGS, Q1
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
April 25, 2005
TGA4043
TABLE III
RF CHARACTERIZATION TABLE
(TA = 25 °C, Nominal)
Vd = 7V, Id = 500 mA
SYMBOL
PARAMETER
TEST
CONDITION
TYPICAL
LIMITS
UNITS
Gain
Small Signal Gain
F = 40-45 GHz
10
dB
IRL
Input Return Loss
F = 40-45 GHz
14.5
dB
ORL
Output Return Loss
F = 40-45 GHz
12.5
dB
Output Power @
1dB Gain
Compression
F = 40-45 GHz
29
P1dB
dBm
TABLE IV
THERMAL INFORMATION*
Parameter
RθJC Thermal
Resistance
(channel to backside of
carrier)
Test Conditions
Vd = 7 V
ID = 500 mA
Pdiss = 3.5 W
TCH
(oC)
130
RTJC
(qC/W)
TM
(HRS)
17.3
5.9 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier at 70°C baseplate temperature. Worst case condition with no RF
applied, 100% of DC power is dissipated.
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
April 25, 2005
TGA4043
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 500mA
15
25
20
Gain
9
15
6
10
3
5
0
0
Input
-3
-5
-6
-10
-9
-15
-12
Return Loss (dB)
Gain (dB)
12
-20
Output
-15
-25
30
32
34
36
38
40
42
44
46
48
50
Frequency (GHz)
31
32
29
Output power (dBm)
P1dB (dBm)
31
30
29
28
27
26
27
40 GHz
41 GHz
42 GHz
43 GHz
44 GHz
45 GHz
25
23
21
19
17
25
40
40.5
41
41.5
42
42.5
43
43.5
44
44.5
15
45
6
8
10
Frequency (GHz)
12
14
16
18
20
22
Input power (dBm)
16
40 GHz
41 GHz
14
42 GHz
43 GHz
44 GHz
PAE (%)
12
10
45 GHz
8
6
4
2
0
6
8
10
12
14
16
18
20
22
24
Input power (dBm)
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
24
Advance Product Information
April 25, 2005
TGA4043
Mechanical Characteristics
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
April 25, 2005
TGA4043
Recommended Assembly Diagram
Vg
10
:
P
1 F
P
1 F
10
:
Vd = 7V
0.01PF
100pF
100pF
100pF
100pF
0.01PF
Vg
Vd = 7V
Note:
We recommend 1µF caps on the bias lines to suppress possible low frequency oscillations.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
April 25, 2005
TGA4043
Assembly Process Notes
Reflow process assembly notes:
•
•
•
•
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Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
•
•
•
•
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
•
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 °C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com