Advance Product Information April 5, 2006 13 - 17 GHz 2.5 Watt, 25dB Power Amplifier TGA2505 Key Features and Performance • • • • • • • • Preliminary Measured Performance 10 25 5 S21 S11 S22 20 0 15 -5 10 -10 5 -15 0 -20 11 12 13 14 15 16 17 18 S11, S22 (dB) S21 (dB) Bias Conditions: Vd=7V Id=640mA 30 34 dBm Midband Pout 25 dB Nominal Gain 7 dB Typical Input Return Loss 12 dB Typical Output Return Loss Built-in Directional Power Detector with Reference 0.25µm pHEMT Technology Bias Conditions: 7V, 640mA Chip dimensions: 2.03 x 1.39 x 0.10 mm (0.080 x 0.055 x 0.004 inches) Primary Applications • • VSAT Point-to-Point 19 35 60 34 55 33 50 32 45 31 40 Psat PAE 30 35 29 30 28 25 27 20 26 15 25 PAE@Psat (%) Psat (dBm) Frequency (GHz) 10 11 12 13 14 15 16 17 18 19 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 1 Advance Product Information April 5, 2006 TGA2505 TABLE I MAXIMUM RATINGS Symbol V Value Notes 8V 2/ Positive Supply Voltage - Negative Supply Voltage Range -5V to 0V Positive Supply Current (Quiescent) 1300 mA V I Parameter 1/ + + 2/ | IG | Gate Supply Current 18 mA PIN Input Continuous Wave Power 24 dBm 2/ PD Power Dissipation 6.43 W 2/ 3/ TCH TM TSTG 0 Operating Channel Temperature 150 C 4/ 5/ 0 Mounting Temperature (30 Seconds) 320 C -65 to 150 0C Storage Temperature 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ When operated at this bias condition with a base plate temperature of 70°C, the median life is reduced from 8.9E+6 to 1E+6. 4/ These ratings apply to each individual FET. 5/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II DC PROBE TEST (TA = 25 °C, Nominal) NOTES LIMITS SYMBOL UNITS 1/ IDSS MIN 80 MAX 381 mA 1/ GM 175 425 mS 2/ |VP| 0.5 1.5 V 2/ |VBVGS| 8 30 V 2/ |VBVGD| 13 30 V 1/ Measurements are performed on a 800µm FET. 2/ VP, VBVGD, and VBVGS are negative. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 2 Advance Product Information April 5, 2006 TGA2505 TABLE III RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (Vd = 7V, Id = 640mA r5%) SYMBOL PARAMETER TEST CONDITION LIMITS TYP UNITS Gain Small Signal Gain F = 13 – 17 GHz 25 dB IRL Input Return Loss F = 13 – 17 GHz 7 dB ORL Output Return Loss F = 13 – 17 GHz 12 dB PWR Output Power @ Pin = +15 dBm F = 13 – 17 GHz 34 dBm Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. TABLE IV THERMAL INFORMATION PARAMETER Rθjc Thermal Resistance (Channel to Backside) TEST CONDITION VD = 7V ID = 640mA PD = 4.48W TCH (qC) RTjc (qC/W) MTTF (HRS) 125.74 12.44 8.9E+6 Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 3 Advance Product Information April 5, 2006 TGA2505 S21 (dB) Typical Fixtured Performance 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 11 12 13 14 15 16 17 18 19 18 19 Frequency (GHz) 0 S11 S22 S11,S22 (dB) -5 -10 -15 -20 -25 -30 11 12 13 14 15 16 17 Frequency (GHz) TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 4 Advance Product Information April 5, 2006 TGA2505 Typical Fixtured Performance 35 34.5 Psat P2dB 34 Pout (dBm) 33.5 33 32.5 32 31.5 31 30.5 30 11 12 13 14 15 16 17 18 19 Frequency (GHz) 40 PAE @ Psat PAE @ P2dB 35 PAE (%) 30 25 20 15 10 11 12 13 14 15 16 17 18 19 Frequency (GHz) TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 5 Advance Product Information April 5, 2006 TGA2505 Typical Fixtured Performance 37 2600 13.5 GHz 14.0 GHz 14.5 GHz 33 31 2400 2200 2000 29 1800 27 1600 25 1400 23 1200 21 1000 19 800 17 600 -5 -3 -1 1 3 5 7 9 11 13 15 17 Id (mA) Output Power (dBm) 35 19 Input power (dBm) TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 6 Advance Product Information April 5, 2006 TGA2505 Typical Fixtured Performance 18 12 IMD3 (dBm) 6 0 -6 13GHz 14GHz 15GHz -12 -18 -24 -30 -36 16 18 20 22 24 26 28 30 Output power/tone (dBm) 45 44 IP3 Avg (dBm) 43 42 41 40 39 38 37 36 35 11 12 13 14 15 16 17 18 19 Frequency (GHz) TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 7 Advance Product Information April 5, 2006 TGA2505 Mechanical Drawing 8QLWVPLOOLPHWHUVLQFKHV 7KLFNQHVV &KLSHGJHWRERQGSDGGLPHQVLRQVDUHVKRZQWRFHQWHURIERQGSDG &KLSVL]HWROHUDQFH *1',6%$&.6,'(2)00,& %RQGSDG5),QSXW[[ %RQGSDG9UHI[[ %RQGSDG9G[[ %RQGSDG9G[[ %RQGSDG5)2XWSXW[[ %RQGSDG9GHW[[ %RQGSDG9J[[ %RQGSDG9J[[ TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 8 Advance Product Information April 5, 2006 TGA2505 Power Detector +5V 40K: 40K: Vref Vdet External MMIC 5pF 50: RF out DUT TGA2505 Power Detector @ 14GHz 0.6 Vref-Vdet (V) 0.5 0.4 0.3 0.2 0.1 0 0 10 (20 dBm) 20 (26 dBm) 30 40 50 (29.5 dBm) (32 dBm) (34 dBm) 60 sqrt Pout (mW^0.5) TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 9 Advance Product Information April 5, 2006 TGA2505 Chip Assembly & Bonding Diagram Vd 100pF Off chip R=10: Off chip C=0.1PF Input TFN Output TFN Vg Off chip R=10: 100pF Off chip C=0.1PF GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 10 Advance Product Information April 5, 2006 TGA2505 Assembly Process Notes Reflow process assembly notes: • • • • • Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200°C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 11