Advance Product Information November 11, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA (Id = 800mA under RF drive) Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications • • • Ka-Band VSAT Ground Terminal Point-to-Point Radio Point-to-Multipoint Communications Product Description Bias Conditions: Vd = 6V, Idq = 420mA 24 0 22 -2 Gain 20 -4 18 -6 16 -8 Output 14 -10 12 -12 10 -14 8 -16 Input 6 -18 4 -20 2 -22 0 Evaluation Boards are available upon request. Lead-free and RoHS compliant. 28.5 29 29.5 30 30.5 31 Frequency (GHz) 33 32 Output Power (dBm) The TGA4509-SM is available in a lowcost, surface mount 4x4 QFN style package and is ideally suited for Kaband VSAT Ground Terminal, Point-toPoint Radio and Point-to-Multipoint applications. -24 28 31 30 29 28 27 26 P1dB 25 Psat 24 23 28 28.5 29 29.5 30 30.5 31 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Return Loss (dB) The TGA4509-SM typically provides 30 dBm of output power at 1 dB gain compression with small signal gain of 19 dB. Measured Performance Gain (dB) The TriQuint TGA4509-SM is a Ka-Band Packaged 1W Power Amplifier. The TGA4509-SM operates from 28-31 GHz and is designed using TriQuint’s proven standard 0.25 um power pHEMT production process. Advance Product Information November 11, 2005 TGA4509-SM TABLE I MAXIMUM RATINGS Symbol + Parameter 1/ V Positive Supply Voltage V- Negative Supply Voltage Range I + Value Notes 7V 2/ -5V to 0V Positive Supply Current 984 mA | IG | Gate Supply Current 35 mA PIN Input Continuous Wave Power 22 dBm 2/ PD Power Dissipation See Note 3 2/ 3/ TCH Operating Channel Temperature 150 °C 4/ 5/ TM Mounting Temperature (30 Seconds) 260 °C TSTG Storage Temperature 2/ -65 to 150 °C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 °C – TBASE °C) / 22.4 (°C/W) 4/ These ratings apply to each individual FET. 5/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM TABLE II RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) Bias Conditions: Vd = 6V, Idq = 420mA SYMBOL PARAMETER TEST CONDITION NOMINAL UNITS Gain Small Signal Gain f = 28-31 GHz 19 dB IRL Input Return Loss f = 28-31 GHz 16 dB ORL Output Return Loss f = 28-31 GHz 10 dB Psat Saturated Output Power f = 28-31 GHz 30.5 dBm P1dB Output Power @ 1dB Compression f = 28-31 GHz 30 dBm TABLE III THERMAL INFORMATION PARAMETER R θjc Thermal Resistance (Channel to package) TEST CONDITION T CH (qC) R Tjc MTTF (qC/W) (HRS) V D = 6V IDq = 420mA 141 22.4 2.2 E+6 P Diss = 2.52 W Note: Backside of package is at 85 °C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 4.8 W with 1 W RF power delivered to load. Power dissipated is 3.8 W and the temperature rise in the channel is 85 °C. Baseplate temperature must be reduced to 65 °C to remain below the 150 °C maximum channel temperature. 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM Measured Performance Bias Conditions: Vd = 6 V, Idq = 420 mA 24 0 -2 Gain 20 -4 18 -6 16 -8 14 -10 Output 12 -12 10 -14 Input 8 -16 6 -18 4 -20 2 -22 0 -24 25 26 27 28 29 30 31 32 33 34 Return Loss (dB) Gain (dB) 22 35 Frequency (GHz) 24 22 20 18 Gain (dB) 16 14 12 10 8 -40 deg C 6 4 +25 deg C 2 +80 deg C 0 25 26 27 28 29 30 31 32 33 34 35 Frequency (GHz) * Note: Temperature data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been de-embedded. 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM Measured Performance Bias Conditions: Vd = 6 V, Idq = 420 mA 33 Output Power (dBm) 32 31 30 29 28 27 26 P1dB 25 Psat 24 23 28 28.5 29 29.5 30 30.5 31 31.5 32 33 1100 30 1000 27 900 24 800 21 700 18 600 15 500 12 400 Pout Gain Ids 9 6 300 200 3 100 0 0 -18 -14 -10 -6 -2 2 6 10 14 Ids (mA) Gain (dB) & Pout (dBm) Frequency (GHz) 18 Input Power @ 30 GHz (dBm) 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM Package Pinout Diagram 16 TGA 17 18 19 20 15 1 14 2 4509 21 3 13 Date Code Lot Code 12 4 11 5 10 9 Top View 8 7 6 Bottom View Dot indicates Pin 1 Pin Description 1, 5, 6, 10, 11, 15, 16, 20, 21 GND 2, 4, 8, 12, 14, 17, 18, 19 NC 3 RF Input 7 and/or 19 Vg 9 and/or 17 Vd 13 RF Output GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM 19X 0.40 Mechanical Drawing 20X 0.25 16X 0.65 (PITCH) 2.20±0.125 3.20 4.00±0.25 16 18 19 20 15 1 14 2 21 13 3 Ground Pad 12 4 11 5 10 4X R0.13 17 9 8 7 6 2.20±0.125 3.20 4.00±0.25 Units: millimeters. Tolerance is ± 0.076mm unless otherwise specified Bottom view GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM Recommended Board Layout Assembly * 7XQLQJ 6WXE 7XQLQJ 6WXE X) X) 9G 9 RKP 9Ja9 $GMXVW9JWRREWDLQ ,G P$ X) RKP X) Units: mils * The layout is a general purpose drawing that needs to be tuned for the specific application. PCB is RO4003 8 mil thickness, 0.5 oz standard copper cladding, with Er = 3.38. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 °C/sec 3 °C/sec Activation Time and Temperature 60 – 120 sec @ 140 – 160 °C 60 – 180 sec @ 150 – 200 °C Time above Melting Point 60 – 150 sec 60 – 150 sec Max Peak Temperature 240 °C 260 °C Time within 5 °C of Peak Temperature 10 – 20 sec 10 – 20 sec Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec Ordering Information Part TGA4509-SM Package Style QFN 4x4 Surface Mount GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com