TRIQUINT TGA4509-SM

Advance Product Information
November 11, 2005
Ka-Band Packaged 1W PA
TGA4509-SM
Key Features
•
•
•
•
•
•
Frequency Range: 28-31 GHz
30 dBm Nominal P1dB
19 dB Nominal Gain
Bias Conditions: Vd = 6 V, Idq_tot = 420 mA
(Id = 800mA under RF drive)
Compact 4 x 4 QFN with 20 leads
Package Dimensions: 4.0 x 4.0 x 0.9 mm
Primary Applications
•
•
•
Ka-Band VSAT Ground Terminal
Point-to-Point Radio
Point-to-Multipoint Communications
Product Description
Bias Conditions: Vd = 6V, Idq = 420mA
24
0
22
-2
Gain
20
-4
18
-6
16
-8
Output
14
-10
12
-12
10
-14
8
-16
Input
6
-18
4
-20
2
-22
0
Evaluation Boards are available upon
request.
Lead-free and RoHS compliant.
28.5
29
29.5
30
30.5
31
Frequency (GHz)
33
32
Output Power (dBm)
The TGA4509-SM is available in a lowcost, surface mount 4x4 QFN style
package and is ideally suited for Kaband VSAT Ground Terminal, Point-toPoint Radio and Point-to-Multipoint
applications.
-24
28
31
30
29
28
27
26
P1dB
25
Psat
24
23
28
28.5
29
29.5
30
30.5
31
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Return Loss (dB)
The TGA4509-SM typically provides 30
dBm of output power at 1 dB gain
compression with small signal gain of 19
dB.
Measured Performance
Gain (dB)
The TriQuint TGA4509-SM is a
Ka-Band Packaged 1W Power Amplifier.
The TGA4509-SM operates from 28-31
GHz and is designed using TriQuint’s
proven standard 0.25 um power pHEMT
production process.
Advance Product Information
November 11, 2005
TGA4509-SM
TABLE I
MAXIMUM RATINGS
Symbol
+
Parameter 1/
V
Positive Supply Voltage
V-
Negative Supply Voltage Range
I
+
Value
Notes
7V
2/
-5V to 0V
Positive Supply Current
984 mA
| IG |
Gate Supply Current
35 mA
PIN
Input Continuous Wave Power
22 dBm
2/
PD
Power Dissipation
See Note 3
2/ 3/
TCH
Operating Channel Temperature
150 °C
4/ 5/
TM
Mounting Temperature (30 Seconds)
260 °C
TSTG
Storage Temperature
2/
-65 to 150 °C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed PD.
3/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 °C – TBASE °C) / 22.4 (°C/W)
4/
These ratings apply to each individual FET.
5/
Junction operating temperature will directly affect the device median time to failure (TM).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
November 11, 2005
TGA4509-SM
TABLE II
RF CHARACTERIZATION TABLE
(TA = 25qC, Nominal)
Bias Conditions: Vd = 6V, Idq = 420mA
SYMBOL
PARAMETER
TEST CONDITION
NOMINAL
UNITS
Gain
Small Signal Gain
f = 28-31 GHz
19
dB
IRL
Input Return Loss
f = 28-31 GHz
16
dB
ORL
Output Return Loss
f = 28-31 GHz
10
dB
Psat
Saturated Output Power
f = 28-31 GHz
30.5
dBm
P1dB
Output Power @ 1dB
Compression
f = 28-31 GHz
30
dBm
TABLE III
THERMAL INFORMATION
PARAMETER
R θjc Thermal Resistance
(Channel to package)
TEST CONDITION
T CH
(qC)
R Tjc
MTTF
(qC/W) (HRS)
V D = 6V
IDq = 420mA
141
22.4
2.2 E+6
P Diss = 2.52 W
Note: Backside of package is at 85 °C baseplate temperature. Worst case is
at saturated output power when DC power consumption rises to 4.8 W with
1 W RF power delivered to load. Power dissipated is 3.8 W and the
temperature rise in the channel is 85 °C. Baseplate temperature must be
reduced to 65 °C to remain below the 150 °C maximum channel
temperature.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
November 11, 2005
TGA4509-SM
Measured Performance
Bias Conditions: Vd = 6 V, Idq = 420 mA
24
0
-2
Gain
20
-4
18
-6
16
-8
14
-10
Output
12
-12
10
-14
Input
8
-16
6
-18
4
-20
2
-22
0
-24
25
26
27
28
29
30
31
32
33
34
Return Loss (dB)
Gain (dB)
22
35
Frequency (GHz)
24
22
20
18
Gain (dB)
16
14
12
10
8
-40 deg C
6
4
+25 deg C
2
+80 deg C
0
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
* Note:
Temperature data is taken using connectorized evaluation boards.
The reference plane is at RF connectors, and hence connector and
board loss has not been de-embedded.
4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
November 11, 2005
TGA4509-SM
Measured Performance
Bias Conditions: Vd = 6 V, Idq = 420 mA
33
Output Power (dBm)
32
31
30
29
28
27
26
P1dB
25
Psat
24
23
28
28.5
29
29.5
30
30.5
31
31.5
32
33
1100
30
1000
27
900
24
800
21
700
18
600
15
500
12
400
Pout
Gain
Ids
9
6
300
200
3
100
0
0
-18
-14
-10
-6
-2
2
6
10
14
Ids (mA)
Gain (dB) & Pout (dBm)
Frequency (GHz)
18
Input Power @ 30 GHz (dBm)
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
November 11, 2005
TGA4509-SM
Package Pinout Diagram
16
TGA
17
18
19
20
15
1
14
2
4509
21
3
13
Date Code
Lot Code
12
4
11
5
10
9
Top View
8
7
6
Bottom View
Dot indicates Pin 1
Pin
Description
1, 5, 6, 10, 11, 15, 16, 20, 21
GND
2, 4, 8, 12, 14, 17, 18, 19
NC
3
RF Input
7 and/or 19
Vg
9 and/or 17
Vd
13
RF Output
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
6
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
November 11, 2005
TGA4509-SM
19X 0.40
Mechanical Drawing
20X 0.25
16X 0.65 (PITCH)
2.20±0.125
3.20
4.00±0.25
16
18
19
20
15
1
14
2
21
13
3
Ground Pad
12
4
11
5
10
4X R0.13
17
9
8
7
6
2.20±0.125
3.20
4.00±0.25
Units: millimeters. Tolerance is ± 0.076mm unless otherwise specified
Bottom view
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
7
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
November 11, 2005
TGA4509-SM
Recommended Board Layout Assembly *
7XQLQJ
6WXE
7XQLQJ
6WXE
X)
X)
9G 9
RKP
9Ja9
$GMXVW9JWRREWDLQ
,G P$
X)
RKP
X)
Units: mils
* The layout is a general purpose drawing that needs to be tuned for the specific application.
PCB is RO4003 8 mil thickness, 0.5 oz standard copper cladding, with Er = 3.38.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
November 11, 2005
TGA4509-SM
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages.
Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven
vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed
in the table below.
Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement.
The volume of solder paste depends on PCB and component layout and should be well controlled to
ensure consistent mechanical and electrical performance.
Clean the assembly with alcohol.
Typical Solder Reflow Profiles
Reflow Profile
SnPb
Pb Free
Ramp-up Rate
3 °C/sec
3 °C/sec
Activation Time and
Temperature
60 – 120 sec @ 140 – 160 °C
60 – 180 sec @ 150 – 200 °C
Time above Melting Point
60 – 150 sec
60 – 150 sec
Max Peak Temperature
240 °C
260 °C
Time within 5 °C of Peak
Temperature
10 – 20 sec
10 – 20 sec
Ramp-down Rate
4 – 6 °C/sec
4 – 6 °C/sec
Ordering Information
Part
TGA4509-SM
Package Style
QFN 4x4 Surface Mount
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
9
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com