TRIQUINT TGA4905-CP

Advance Product Information
February 7, 2006
4 Watt Ka Band Packaged Amplifier
TGA4905-CP
Key Features and Performance
•
•
•
•
•
•
36 dBm VSAT band Psat
22 dB Nominal Gain
25 - 31 GHz Frequency Range
0.25µm pHEMT Technology
Bias Conditions: 6 V, 2.1 A (Quiescent)
up to 4 A under RF drive
Package Dimensions:
13.34 x 9.65 x 1.85 mm
(0.525 x 0.380 x 0.073 in)
Primary Applications
Product Description
•
•
The TriQuint TGA4905-CP is a compact
4 Watt High Power Amplifier Packaged
MMIC for Ka-band applications. The part
is designed using TriQuint’s proven
standard 0.25 um gate Power pHEMT
production process.
Measured Performance
Bias Conditions: Vd=6 V Idq=2.1 A
30
30
20
Gain
Input RL
Output RL
20
The part is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals,
point to point radio and LMDS.
10
15
0
10
-10
5
-20
0
Return Loss (dB)
25
Gain (dB)
The TGA4905 provides a nominal 36
dBm of output power at an input power
level of 18 dBm from 25-31 GHz with a
small signal gain of 22 dB.
Satellite Ground Terminals
Point to Point
-30
25
26
27
28
29
30
31
Frequency (GHz)
40
38
Pout @ Pin=18dBm (dBm)
The TGA4905-CP is 100% RF tested to
ensure performance compliance.
36
34
32
30
28
26
24
22
20
25
26
27
28
29
30
31
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: [email protected]
1
Advance Product Information
February 7, 2006
TGA4905-CP
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
8V
2/
VD
Drain Voltage
VG
Gate Voltage Range
ID
Drain Current (Quiescent)
3.0 A
| IG |
Gate Current
62 mA
PIN
Input Continuous Wave Power
24 dBm
2/
PD
Power Dissipation
16.8 W
2/ 3/
-5 V to 0 V
0
TCH
Operating Channel Temperature
150 C
TM
Mounting Temperature (30 Seconds)
320 C
TSTG
Storage Temperature
2/
4/ 5/
0
0
-65 to 150 C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/
PD is the power dissipation allowed in order to reach a channel temperature of 150°C with a package
base temperature of 70°C. When operated at this power dissipation with a baseplate temperature of
70°C, the MTTF is 1.0E+6 hours.
4/
These ratings apply to each individual FET.
5/
Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: [email protected]
2
Advance Product Information
February 7, 2006
TGA4905-CP
TABLE II
RF CHARACTERIZATION TABLE
(TA = 25qC, Nominal)
(Vd = 6 V, Idq = 2.1 A)
SYMBOL
PARAMETER
TEST CONDITION
TYPICAL
UNITS
Gain
Small Signal Gain
F = 25 – 31GHz
22
dB
IRL
Input Return Loss
F = 25 – 31GHz
10
dB
ORL
Output Return Loss
F = 25 – 31GHz
8
dB
PWR
Output Power @ Psat
F = 25 – 31GHz
36
dBm
TABLE III
THERMAL INFORMATION
Parameter
RΘJC Thermal Resistance
(Channel to Backside of
Package)
Test Conditions
VD = 6 V
ID = 2.1 A (Quiescent)
PDISS = 12.6 W
TCH (qC)
128.35
R4JC
(qC/W)
TM (hrs)
4.63
6.9 E+6
Note: Backside of package is at 70 °C baseplate temperature. Worst case is at saturated
output power when DC power consumption rises to 23 W with 4 W RF power delivered to
load. Power dissipated is 19 W and the temperature rise in the channel is 88 °C.
Baseplate temperature must be reduced to 62 °C to remain below the 150 °C maximum
channel temperature.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: [email protected]
3
Advance Product Information
February 7, 2006
TGA4905-CP
Measured Fixtured Performance
VD = 6 V Idq = 2.1 A
30
Gain
Input RL
Output RL
Gain (dB)
25
20
20
10
15
0
10
-10
5
-20
0
-30
20
22
24
26
28
30
32
34
Return Loss (dB)
30
36
Frequency (GHz)
40
Pout @ Pin=18dBm (dBm)
38
36
34
32
30
28
26
24
22
20
25
26
27
28
29
30
31
Frequency (GHz)
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: [email protected]
4
Advance Product Information
February 7, 2006
TGA4905-CP
Measured Fixtured Performance
40
4.2
35
3.9
Pout
30
3.6
25
3.3
20
3
Gain
15
2.7
10
Ids (A)
Pout (dBm) & Power
Gain (dB)
VD = 6 V Idq = 2.1 A
2.4
5
2.1
Ids
0
1.8
-5
-3
-1
1
3
5
7
9
11
13
15
17
19
Pin (dBm)
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: [email protected]
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Advance Product Information
February 7, 2006
TGA4905-CP
Package Pinout Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: [email protected]
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Advance Product Information
February 7, 2006
TGA4905-CP
Mechanical Drawing
9.65 (0.380)
9.48 (0.373)
8.98 (0.353)
2
3
4
8.47 (0.334)
7.93 (0.312)
6.42 (0.253)
5.24 (0.206)
4.83 (0.190)
4.38 (0.172)
Hole Diameter = 1.98 (0.078), 4x
1
5
3.16 (0.124)
1.72 (0.068)
1.16 (0.046)
0.64 (0.025)
6
7
8
0.11 (0.004)
0 0
. 0 ( 0.0 0)
13.34 (0.525)
13.20 (0.520)
11.66 (0.459)
10.19 (0.401)
8.46 (0.333)
6.68 (0.263)
4.92 (0.193)
4.14 (0.163)
3.21 (0.126)
2.52 (0.099)
1.73 (0.068)
0.00 (0.000)
0.15 (0.006)
0.00 (0.000)
Units: millimeters (inches) Tolerance: +/-0.08 (0.003)
RF Ground through Backside
Bond Pad #1
Bond Pad #2
Bond Pad #3
Bond Pad #4
Bond Pad #5
Bond Pad #6
Bond Pad #7
Bond Pad #8
(RF Input)
(Vg)
(Vd1)
(Vd2)
(RF Output)
(N/C)
(N/C)
(N/C)
2.03 x 0.57
1.02 x 1.03
1.02 x 1.03
1.02 x 1.03
2.66 x 0.61
1.02 x 1.05
1.02 x 1.05
1.02 x 1.05
(0.080 x 0.022)
(0.044 x 0.040)
(0.044 x 0.040)
(0.044 x 0.040)
(0.105 x 0.240)
(0.044 x 0.041)
(0.044 x 0.041)
(0.044 x 0.041)
Top View
0.073 +/- 0.005
1.8542
±.005
LID
SUBSTRATE
STACK .
0.000
0. 8153
0.0028/ 0.0 024
0.032
+0.003/-0.002
0.0000
DIMENSIONS IN INCHES
Side View
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: [email protected]
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Advance Product Information
February 7, 2006
TGA4905-CP
Bias Schematic
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: [email protected]
8
Advance Product Information
February 7, 2006
TGA4905-CP
Assembly of a TGA4905-CP into a Module
Manual Assembly for Prototypes
1. Clean the module with Acetone. Rinse with alcohol and DI water. Allow the module to fully dry.
2. To improve the thermal and RF performance, TriQuint recommends attaching a heatsink to the bottom
of the package. If the TGA4905 is mounted to the heatsink with mounting screws, an indium shim or other
compliant material should be inserted between the TGA4905 and the heatsink to reduce thermal contact
resistance due to air gaps. The TGA4905 may also be mounted with DieMat DM6030HK conductive epoxy
or an equivalent high thermal conductivity epoxy.
3. The DC and RF interconnects may be gold bondwires or gold ribbons. The RF interconnects should be
as short as possible. A minimum of two 1 mil wires are recommended for the RF Input, RF Output, Vg, and
Vd1. Six bondwires are recommended for Vd2.
ORDERING INFORMATION
PART
PACKAGE STYLE
TGA4905-CP
CARRIER PLATE
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: [email protected]
9