TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V Drain current DC (Note 1) ID 6 Pulse (Note 1) IDP 24 PD (1) 1.1 Single-device Drain power operation (Note 3a) dissipation (t = 10 s) Single-device value (Note 2a) at dual operation (Note 3b) A 0.75 PD (1) 0.6 PD (2) 0.35 Single pulse avalanche energy (Note 4) EAS 46.8 mJ Avalanche current IAR 6 A EAR 0.075 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Repetitive avalanche energy Single-device value at dual operation ― JEITA ― TOSHIBA W PD (2) Single-device Drain power operation (Note 3a) dissipation (t = 10 s) Single-device value (Note 2b) at dual operation (Note 3b) JEDEC 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration W 8 7 6 5 1 2 3 4 (Note 2a, 3b, 5) Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPCS8204 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 114 Rth (ch-a) (2) 167 Rth (ch-a) (1) 208 Rth (ch-a) (2) 357 Unit °C/W °C/W Marking (Note 6) S8204 A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot No. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 6 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2004-07-06 TPCS8204 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯ Vth VDS = 10 V, ID = 200 µA 0.5 ⎯ 1.2 VGS = 2.0 V, ID = 4.2 A ⎯ 24 35 VGS = 2.5 V, ID = 4.2 A ⎯ 18 22 VGS = 4.0 V, ID = 4.8 A ⎯ 13 17 VDS = 10 V, ID = 3.0 A 7.5 15 ⎯ ⎯ 2160 ⎯ ⎯ 210 ⎯ ⎯ 230 ⎯ ⎯ 5 ⎯ ⎯ 13 ⎯ Gate threshold voltage Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time Turn-ON time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton VGS Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) 4.7 Ω Switching time tf toff ID = 3 A 5V 0V VOUT RL = 3.3 Ω Drain-source breakdown voltage VDD ∼ − 10 V Duty < = 1%, tw = 10 µs Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd VDD ∼ − 16 V, VGS = 5 V, ID = 6 A V V mΩ S pF ns ⎯ 10 ⎯ ⎯ 53 ⎯ ⎯ 22 ⎯ ⎯ 4 ⎯ ⎯ 5 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 24 A ⎯ ⎯ −1.2 V VDSF IDR = 6 A, VGS = 0 V 3 2004-07-06 TPCS8204 ID – VDS 5 4, 5 8 1.3 1 Ta = 25°C 1.7 6 4 1.5 1.4 2 0.4 0.8 1.2 Drain-source voltage 1.6 VGS = 1.2 V 1.3 VGS = 1.2 V 0 0 Pulse test 1.6 (A) 1.4 ID (A) ID Drain current Ta = 25°C, Pulse test 2 Common source 2 2 Common source 3 4, 5 1.5 Drain current 4 ID – VDS 10 0 0 2.0 VDS (V) 1 2 3 4 Drain-source voltage ID – VGS VDS (V) VDS – VGS 10 0.8 Common source Common source Ta = 25°C 25 2 100 0 0 Pulse test 0.6 VDS 4 Drain-source voltage ID Drain current (A) (V) VDS = 10 V Pulse test 8 6 5 Ta = −55°C 1 2 3 Gate-source voltage 4 VGS 0.4 ID = 1.5 A 0.2 12 6 0 0 5 3 (V) 2 4 6 Gate-source voltage |Yfs| – ID 8 VGS 10 (V) RDS (ON) – ID 100 Ta = −55°C 25 100 10 1 0.1 Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) 100 4 10 Common source Common source VDS = 10 V Pulse test Ta = 25°C 1 Drain current VGS = 2 V 2.5 Pulse test 1 0.1 10 ID (A) 1 Drain current 4 10 ID (A) 2004-07-06 TPCS8204 RDS (ON) – Ta IDR – VDS 10 40 Common source Pulse test Drain reverse current IDR (A) 30 25 VGS = 2 V 2.5 20 4 15 10 ID = 1.5, 3, 6 A 10, 5, 3 1 0 VGS = −1 V 3 Common source Ta = 25°C 5 Pulse test −40 0 40 Ambient temperature 80 120 Ta 1 0 160 −0.2 (°C) −0.4 Capacitance – VDS Vth (V) Gate threshold voltage (pF) C Capacitance Coss Crss 100 Common source Ta = 25°C VDS = 10 V 1.6 ID = 200 µA Pulse test 1.4 1.2 1.0 0.8 0.6 0.4 0 −80 1 50 100 Ambient temperature (°C) 150 Ta 10 VDS 8 4 12 6 VDD = 16 V 8 4 2 4 (V) 0 0 200 8 16 VDS (4) 0.2 0 0 Ta 160 Dynamic input/output characteristics Drain-source voltage (W) PD Drain power dissipation 0.4 120 80 20 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (3) 40 VDS (V) PD – Ta 0.6 0 Ambient temperature Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) (2) −40 100 10 Drain-source voltage 0.8 Common source 1.8 0.2 VGS = 0 V f = 1 MHz (1) −1.2 Vth – Ta Ciss 1.2 −1.0 VDS (V) 2.0 1000 1 −0.8 Drain-source voltage 10000 10 0.1 −0.6 8 16 24 VGS (V) 0 −80 Gate-source voltage Drain-source ON resistance RDS (ON) (mΩ) 35 0 32 Total gate charge Qg (nC) (°C) 5 2004-07-06 TPCS8204 rth − tw 1000 (4) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) Normalized transient thermal impedance rth (°C/W) 500 (3) (2) (1) 100 50 30 10 5 3 1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (S) Safe operating area 100 Single-device value at dual operation (Note 3b) 50 30 ID max (pulse) * Drain current ID (A) 10 1 ms * 10 ms * 5 3 1 0.5 0.3 0.1 0.05 * Single pulse Ta = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.01 0.01 0.03 0.1 0.3 1 Drain-source voltage VDSS max 3 10 30 100 VDS (V) 6 2004-07-06 TPCS8204 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-06