APTGT100TA60PG Triple phase leg Trench + Field Stop IGBT® Power Module VBUS3 G1 G3 G5 E1 U G2 E2 0/VBUS1 E3 V G6 E4 E6 0/VBUS2 0/VBUS3 VBUS 2 G1 U W G4 VBUS 1 0/VBUS 1 E5 E1 VBUS 3 G3 0/VBUS 2 E3 G5 0/VBUS 3 E5 E2 E4 E6 G2 G4 G6 V W Absolute maximum ratings Symbol VCES Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 150 100 200 ±20 340 Tj = 150°C 200A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V June, 2006 VBUS2 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT100TA60PG – Rev 1 VBUS1 VCES = 600V IC = 100A @ Tc = 80°C APTGT100TA60PG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Test Conditions VR=600V IF = 100A VGE = 0V IF = 100A VR = 300V di/dt =2000A/µs Er 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A R G = 3.3Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A R G = 3.3Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 100A Tj = 25°C R G = 3.3Ω Tj = 150°C Fall Time Td(on) Tr Min Reverse Recovery Energy www.microsemi.com 1.5 1.7 5.8 Typ 6100 390 190 115 45 225 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V pF ns 55 130 50 ns 300 70 0.4 0.875 2.5 3.5 Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Typ Typ mJ mJ Max 250 500 100 1.6 1.5 125 220 4.7 9.9 1.1 2.4 Unit V µA A 2 V ns µC June, 2006 Symbol Characteristic mJ 2-5 APTGT100TA60PG – Rev 1 Electrical Characteristics APTGT100TA60PG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 2500 -40 -40 -40 3 Typ Max 0.44 0.77 Unit °C/W V 175 125 100 5 250 °C N.m g SP6-P Package outline (dimensions in mm) 5 places (3:1) www.microsemi.com 3-5 APTGT100TA60PG – Rev 1 June, 2006 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGT100TA60PG Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 200 200 TJ=25°C 175 150 T J=125°C 125 T J=150°C IC (A) IC (A) 150 100 75 50 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 7 175 1 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 6 TJ =25°C 150 5 E (mJ) 125 100 TJ=125°C 75 0.5 T J=150°C TJ =25°C 0 5 4 Er 3 6 7 Eon 8 9 10 0 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 250 VCE = 300V VGE =15V IC = 100A T J = 150°C 200 Eoff Eon 4 IF (A) E (mJ) 3.5 Eoff 1 25 6 3 2 50 8 2.5 Energy losses vs Collector Current Transfert Characteristics 200 IC (A) V GE=9V 25 T J=25°C 0 VGE =15V 100 50 0 VGE =13V 125 75 25 VGE =19V T J = 150°C 175 150 100 2 Er V GE=15V T J=150°C RG=3.3Ω 50 Eon 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 0 100 200 300 400 V CE (V) 500 600 700 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 IGBT 0.9 0.7 June, 2006 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT100TA60PG – Rev 1 Thermal Impedance (°C/W) 0.5 APTGT100TA60PG Forward Characteristic of diode 200 VCE=300V D=50% RG=3.3Ω TJ =150°C 100 ZCS 80 150 125 Tc=85°C ZVS 60 175 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 100 T J=125°C 75 40 50 Hard switching 20 TJ =150°C 25 TJ=25°C 0 0 0 25 50 75 100 125 0 150 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 Diode 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT100TA60PG – Rev 1 June, 2006 Rectangular Pulse Duration in Seconds