MICROSEMI APTGT150TDU60PG

APTGT100TA60PG
Triple phase leg
Trench + Field Stop IGBT®
Power Module
VBUS3
G1
G3
G5
E1
U
G2
E2
0/VBUS1
E3
V
G6
E4
E6
0/VBUS2
0/VBUS3
VBUS 2
G1
U
W
G4
VBUS 1
0/VBUS 1
E5
E1
VBUS 3
G3
0/VBUS 2
E3
G5
0/VBUS 3
E5
E2
E4
E6
G2
G4
G6
V
W
Absolute maximum ratings
Symbol
VCES
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
• RoHS Compliant
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
150
100
200
±20
340
Tj = 150°C
200A @ 550V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
June, 2006
VBUS2
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APTGT100TA60PG – Rev 1
VBUS1
VCES = 600V
IC = 100A @ Tc = 80°C
APTGT100TA60PG
All ratings @ Tj = 25°C unless otherwise specified
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 100A
Tj = 150°C
VGE = VCE , IC = 1.5 mA
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
Test Conditions
VR=600V
IF = 100A
VGE = 0V
IF = 100A
VR = 300V
di/dt =2000A/µs
Er
5.0
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
R G = 3.3Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 100A
R G = 3.3Ω
VGE = ±15V Tj = 25°C
VBus = 300V Tj = 150°C
IC = 100A
Tj = 25°C
R G = 3.3Ω
Tj = 150°C
Fall Time
Td(on)
Tr
Min
Reverse Recovery Energy
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1.5
1.7
5.8
Typ
6100
390
190
115
45
225
Max
Unit
250
1.9
µA
6.5
400
V
nA
Max
Unit
V
pF
ns
55
130
50
ns
300
70
0.4
0.875
2.5
3.5
Min
600
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Typ
Typ
mJ
mJ
Max
250
500
100
1.6
1.5
125
220
4.7
9.9
1.1
2.4
Unit
V
µA
A
2
V
ns
µC
June, 2006
Symbol Characteristic
mJ
2-5
APTGT100TA60PG – Rev 1
Electrical Characteristics
APTGT100TA60PG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
2500
-40
-40
-40
3
Typ
Max
0.44
0.77
Unit
°C/W
V
175
125
100
5
250
°C
N.m
g
SP6-P Package outline (dimensions in mm)
5 places (3:1)
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3-5
APTGT100TA60PG – Rev 1
June, 2006
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
APTGT100TA60PG
Typical Performance Curve
Output Characteristics (V GE=15V)
Output Characteristics
200
200
TJ=25°C
175
150
T J=125°C
125
T J=150°C
IC (A)
IC (A)
150
100
75
50
0.5
1
1.5
VCE (V)
0
2
2.5
0
3
7
175
1
1.5
2
VCE (V)
VCE = 300V
VGE = 15V
RG = 3.3Ω
TJ = 150°C
6
TJ =25°C
150
5
E (mJ)
125
100
TJ=125°C
75
0.5
T J=150°C
TJ =25°C
0
5
4
Er
3
6
7
Eon
8
9
10
0
11
0
12
25
50
75
100 125 150 175 200
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
250
VCE = 300V
VGE =15V
IC = 100A
T J = 150°C
200
Eoff
Eon
4
IF (A)
E (mJ)
3.5
Eoff
1
25
6
3
2
50
8
2.5
Energy losses vs Collector Current
Transfert Characteristics
200
IC (A)
V GE=9V
25
T J=25°C
0
VGE =15V
100
50
0
VGE =13V
125
75
25
VGE =19V
T J = 150°C
175
150
100
2
Er
V GE=15V
T J=150°C
RG=3.3Ω
50
Eon
0
0
0
5
10
15
20
25
Gate Resistance (ohms)
30
0
100
200
300 400
V CE (V)
500
600
700
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
IGBT
0.9
0.7
June, 2006
0.3
0.5
0.2
0.1
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4-5
APTGT100TA60PG – Rev 1
Thermal Impedance (°C/W)
0.5
APTGT100TA60PG
Forward Characteristic of diode
200
VCE=300V
D=50%
RG=3.3Ω
TJ =150°C
100
ZCS
80
150
125
Tc=85°C
ZVS
60
175
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
100
T J=125°C
75
40
50
Hard
switching
20
TJ =150°C
25
TJ=25°C
0
0
0
25
50
75
100
125
0
150
0.4
IC (A)
0.8
1.2
1.6
VF (V)
2
2.4
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.9
Diode
0.7
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT100TA60PG – Rev 1
June, 2006
Rectangular Pulse Duration in Seconds