SAMHOP STU25N03L

S T U/D25N03L
S amHop Microelectronics C orp.
J uly 11 , 2005
N-C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m W ) Max
R ugged and reliable.
21 @ V G S = 10V
30V
TO251 and TO 252 P ackage.
25A
32 @ V G S = 4.5V
D
D
G
D
G
S
S TU S E R IE S
TO-252AA(D-P AK)
S
G
S TD S E R IE S
TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
30
V
Gate-S ource Voltage
V GS
20
V
P arameter
Drain C urrent-C ontinuous a @ T C =25 C
b
-P ulsed
ID
25
A
IDM
75
A
Drain-S ource Diode Forward C urrent a
IS
20
A
Maximum P ower Dissipation a
PD
50
W
Operating Junction and S torage
Temperature R ange
T J , T S TG
-55 to 175
C
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient a
R JA
50
C /W
THE R MAL C HAR AC TE R IS TIC S
1
S T U/D25N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 24V, V GS = 0V
1
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100 nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
Drain-S ource On-S tate R esistance
R DS (ON)
On-S tate Drain Current
ID(ON)
gFS
OFF CHAR ACTE R IS TICS
30
V
uA
ON CHAR ACTE R IS TICS b
Forward Transconductance
1.7
3
V GS =10V, ID =10A
17
21 m ohm
V GS =4.5V, ID= 6A
25
32
V DS = 10V, V GS = 10V
1
20
V
m ohm
A
16
S
940
PF
148
PF
85
PF
13
ns
10
ns
30
ns
6
ns
V DS =15V, ID =10A,V GS =10V
15.9
nC
V DS =15V, ID =10A,V GS =4.5V
7.4
nC
V DS =15V, ID =10A
V GS =10V
2.0
nC
4.1
nC
V DS = 10V, ID = 10A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =15V, V GS = 0V
f =1.0MH Z
c
V DD = 15V
R L=15 ohm
ID = 1A
V GS = 10V
R GE N = 6 ohm
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
2
S T U/D25N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Diode Forward Voltage
1
V GS = 0V, Is = 20A
VSD
1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
20
20
V G S =10,~4.5V
25 C
V G S =4V
V G S =3.5V
12
8
V G S =3V
4
0
0
15
I D , Drain C urrent (A)
ID , Drain C urrent(A)
16
10
5
T j=125 C
0
0.5
1
1.5
2
2.5
3
0
V DS , Drain-to-S ource Voltage (V )
4
3
5
6
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
F igure 2. Trans fer C haracteris tics
1200
1.6
R DS (ON) , On-R es is tance
Normalized
C is s
1000
C , C apacitance (pF )
2
1
-55 C
800
600
400
C os s
200
1.4
V G S =10V
I D =10A
1.2
1.0
0.8
0.6
C rs s
0
0
5
10
15
20
25
0.4
-55
30
-25
0
25
50
75
100 125
T j( C )
V DS , Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
100 125 150
75
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
24
Is , S ource-drain current (A)
20
16
12
8
4
10.0
1.0
0
0
5
10
15
0.4
20
0.6
0.8
1.0
1.2
1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
80
10
V DS =15V
I D =10A
4
2
0
0
2
4
6
8
10
12
Qg, T otal G ate C harge (nC )
it
L im
N)
(O
1s
10
1
0.5
0.1
14 16
10
S
6
1m
RD
8
60
I D , Drain C urrent (A)
gF S , T rans conductance (S )
V DS =10V
V G S , G ate to S ource V oltage (V )
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T U/D25N03L
s
10
m
0m s
s
DC
V G S =10V
S ingle P ulse
T c=25 C
1
10
30
60
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T U/D25N03L
V DD
ton
RL
V IN
D
td(off)
V OUT
V OUT
10%
5
tf
90%
90%
VG S
R GE N
toff
tr
td(on)
INVE R TE D
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
Duty C ycle=0.5
0.2
P DM
0.1
0.1
t1
0.05
1.
2.
3.
4.
0.02
S ingle P uls e
0.01
10
-4
10
-3
10
-2
10
-1
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
t2
R θJ A (t)=r (t) * R θJ A
R θJ A =S ee Datas heet
T J M-T A = P DM* R θJ A (t)
Duty C ycle, D=t1/t2
10
100
S T U/D25N03L
6
S T U/D25N03L
5
95
7
84
L2
9
6.00
35
05
85
0.94
4
3
0
9
36
2.29
9.70
1.425
0.650
0.600
BSC
1
1.625
0.850
REF.
0.090
82
56
6
0.024
7
9
7
30
3
3
41
3
3
5
1
4
BSC
398
0.064
33
REF.
S T U/D25N03L
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT:㎜
PACKAGE
TO-252
(16 ㎜)
A0
6.80
±0.1
B0
K0
10.3
±0.1
2.50
±0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ψ2
ψ1.5
+ 0.1
- 0
16.0
0.3±
1.75
0.1±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
TO-252 Reel
S
UNIT:㎜
TAPE SIZE
16 ㎜
REEL SIZE
M
N
W
T
H
ψ 330
ψ330
± 0.5
ψ97
± 1.0
17.0
+ 1.5
- 0
2.2
ψ13.0
+ 0.5
- 0.2
8
K
S
10.6
2.0
±0.5
G
R
V