S T M4435 Green Product S amHop Microelectronics C orp. J AN.20 2006 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 20 @ V G S = -10V -30V S urface Mount P ackage. -8A 33 @ V G S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter Limit Unit Drain-S ource Voltage V DS 30 V Gate-S ource Voltage V GS 25 V Drain C urrent-C ontinuous a @ Tj=25 C b -P ulsed ID 8 A IDM 40 A Drain-S ource Diode Forward C urrent a IS 1.7 A Maximum P ower Dissipation a PD 2.5 W Operating Junction and S torage Temperature R ange T J , T S TG -55 to 150 C R JA 50 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T M4435 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1.8 -3 V Drain-S ource On-S tate R esistance R DS (ON) V GS = -10V, ID = -8.0A 16.5 20 m-ohm V GS = -4.5V, ID = -5.0A 26 33 m-ohm -30 V ON CHAR ACTE R IS TICS b V DS = -5V, V GS = -10V ID(ON) gFS On-S tate Drain Current Forward Transconductance -1 A -20 18 S 1470 PF 375 PF 250 PF 22 ns 40 ns 100 ns 50 ns V DS =-15V, ID=-8A,V GS =-10V 30 nC V DS =-15V, ID=-8A,V GS =-4.5V 15 nC V DS =-15V, ID = -8A, V GS =-10V 3.4 nC 9.2 nC V DS = -15V, ID = - 8.0A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =-15V, V GS = 0V f =1.0MH Z c tD(ON) V D = -15V, ID = -1A, V GE N = - 10V, R GE N = 6 -ohm tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 2 S T M4435 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Min Typ C Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage V GS = 0V, Is =-1.7A VSD -0.75 -1.2 Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing. 20 30 -V G S =4V 15 -V G S =4.5V -I D , Drain C urrent (A) -I D , Drain C urrent (A) 25 20 -V G S =10V 15 10 -V G S =3V 5 10 125 C 5 25 C 1 -55 C -V G S =2.5V 0 0 0 0.5 1.5 1.0 2.0 2.5 0 3.0 1.8 2.4 3.0 3.6 F igure 2. Trans fer C haracteris tics F igure 1. Output C haracteris tics 50 2.0 R DS (ON) , On-R es is tance Normalized R DS (on) (m Ω) 1.2 -V G S , G ate-to-S ource Voltage (V ) -V DS , Drain-to-S ource Voltage (V ) 40 V G S =-4.5V 30 20 V G S =-10V 10 0 0.6 1.8 1.6 V G S =-10V I D =-8A 1.4 1.2 V G S =-4.5V I D =-5A 1.0 0 6 12 18 24 30 0 -I D , Drain C urrent (A) 25 50 75 100 125 150 T j( C ) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.2 V DS =V G S I D =-250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 1.3 I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 60 I D =-8A -Is , S ource-drain current (A) 50 125 C R DS (on) (m Ω) 5 V th, Normalized G ate-S ource T hres hold V oltage S T M4435 40 75 C 30 25 C 20 10 0 10.0 125 C 25 C 75 C 1.0 0 2 4 6 8 0 10 -V G S , G ate- S ource Voltage (V ) 0.2 0.4 0.6 0.8 1.0 -V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M4435 -V G S , G ate to S ource V oltage (V ) 2000 C i ss 1200 800 C oss 400 C rss 0 5 0 10 15 20 25 V DS =-15 V I D =-8A 8 6 4 2 0 30 4 0 -V DS , Drain-to S ource Voltage (V ) 8 12 16 20 24 28 32 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 50 100 60 -I D , Drain C urrent (A) 600 S witching T ime (ns ) 6 C , C apacitance (pF ) 1600 10 T D(off) Tf Tr T D (o n) 10 V D S = -15V,I D=-1A 1 10 RD 6 10 60 100 300 600 R g, G ate R es is tance ( Ω) )L im it 10 10 0m ms s 1s DC 1 0.1 V G S = -10 V 1 ON S( 0.03 V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 30 50 -V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 5 F igure 12. Maximum S afe O perating Area S T M4435 -V DD ton V IN D td(off) V OUT V OUT 5 tf 90% 90% VG S R GE N toff tr td(on) RL 10% 10% G 90% S V IN 50% 50% 10% INVE R TE D P ULS E WIDTH F igure 14. S witching Waveforms F igure 13. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 Duty C ycle=0.5 0.2 P DM 0.1 0.1 t1 0.05 t2 1. 2. 3. 4. 0.02 S ingle P uls e 0.01 10 -4 10 -3 10 -2 10 -1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 15. Normalized T hermal T rans ient Impedance C urve 6 10 100 S T M4435 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45± e B 0.05 TYP. A1 0.008 TYP. 0.016 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± 7 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± S T M4435 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:р PACKAGE SOP 8N 150п A0 6.40 B0 5.20 K0 D0 D1 2.10 ӿ1.5 (MIN) ӿ1.5 + 0.1 - 0.0 M N W E1 E2 12.0 ²0.3 1.75 5.5 ²0.05 W1 H K E P0 P1 P2 T 8.0 4.0 2.0 ²0.05 0.3 ²0.05 S G R V SO-8 Reel UNIT:р TAPE SIZE 12 р REEL SIZE ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 8 ӿ12.75 + 0.15 2.0 ²0.15