S DM9435A S amHop Microelectronics C orp. Augus t , 2002 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) TYP R ugged and reliable. 40 @ V G S = -10V -30V 5 S uper high dense cell design for low R DS (ON ). S urface Mount P ackage. -5.3A 67 @ V G S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter Limit Unit Drain-S ource Voltage V DS 30 V Gate-S ource Voltage V GS 20 V Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed ID 5.3 A IDM 20 A Drain-S ource Diode Forward C urrent a IS 1.9 A Maximum P ower Dissipation a PD 2.5 W Operating Junction and S torage Temperature R ange T J , T S TG -55 to 150 C R JA 50 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S DM9435A E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1.5 -3 V Drain-S ource On-S tate R esistance R DS (ON) V GS = -10V, ID =-5.3A 40 50 m-ohm V GS = -4.5V, ID = -4.2A 67 90 m-ohm On-S tate Drain Current ID(ON) gFS -30 V ON CHAR ACTE R IS TICS b Forward Transconductance DYNAMIC CHAR ACTE R IS TICS C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS R ise Time Turn-Off Delay Time V DS = -15V, ID = - 5.3A A -20 9 S 860 PF 470 PF 180 PF c Input Capacitance Turn-On Delay Time V DS = -5V, V GS = -10V -1 V DS =-15V, V GS = 0V f =1.0MH Z c tD(ON) 9 20 ns 10 40 ns 37 90 ns 23 110 ns V DS =-15V,ID =-5.3A,V GS =-10V 15 20 nC V DS =-15V,ID =-5.3A,V GS =-4.5V 8.7 10.5 nC V DS =-15V, ID = -5.3A, V GS =-10V 3 nC 4 nC V D = -15V, ID = -1A, V GE N = - 10V, R GE N = 6 -ohm tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 2 S DM9435A E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Min Typ C Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 5 V GS = 0V, Is =-5.3A VSD -0.84 -1.3 25 20 20 16 -I D , Drain C urrent (A) -I D , Drain C urrent (A) Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing. -V G S =10,9,8,7,6,5V 15 4V 10 5 0 3V 0.5 1.0 1.5 2.0 2.5 T j=125 C 12 8 4 0 0 -55 C 25 C 3.0 0 R DS (ON) , On-R es is tance(Ohms ) (Normalized) 3000 C , C apacitance (pF ) 2500 2000 1500 C is s C os s C rs s 0 0 5 10 15 20 25 1.5 2 2.5 3 F igure 2. Trans fer C haracteris tics F igure 1. Output C haracteris tics 500 1 -V G S , G ate-to-S ource Voltage (V ) -V DS , Drain-to-S ource Voltage (V ) 1000 0.5 30 1.8 1.6 V G S =-10V I D =-5.3A 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 T j, J unction T emperature ( C ) -V DS , Drain-to S ource Voltage (V ) F igure 4. On-R es is tance Variation with Temperature F igure 3. C apacitance 3 V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.09 V DS =V G S I D =-250uA 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 V G S =0V 12 -Is , S ource-drain current (A) gF S , T rans conductance (S ) 1.15 T j, J unction T emperature ( C ) 15 9 6 3 V DS =-15V 5 10 15 10.0 1.0 0 0 20 0.4 -I DS , Drain-S ource C urrent (A) 0.6 0.7 0.9 1.1 1.3 -V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 10 50 V DS =-15V I D =-5.3A 8 -I D , Drain C urrent (A) V G S , G ate to S ource V oltage (V ) 5 V th, Normalized G ate-S ource T hres hold V oltage S DM9435A 6 4 2 10 RD 0 2 4 6 8 10 12 14 Qg, T otal G ate C harge (nC ) im it 10 10 0.1 0m ms s 1s DC V G S =-10V S ingle P ulse T A =25 C 0.1 16 )L 1 0.03 0 ON S( 1 10 30 50 -V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S DM9435A -V DD ton V IN D td(off) V OUT V OUT 5 tf 90% 90% VG S R GE N toff tr td(on) RL 10% 10% G 90% S V IN 50% 10% 50% INVE R TE D P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 Duty C ycle=0.5 0.2 P DM 0.1 0.1 t1 0.05 1. 2. 3. 4. 0.02 S ingle P uls e 0.01 10 -4 10 -3 10 -2 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100