SAMHOP SDM9435A

S DM9435A
S amHop Microelectronics C orp.
Augus t , 2002
P -C hannel E nhancement Mode MOS FE T
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
( m W ) TYP
R ugged and reliable.
40 @ V G S = -10V
-30V
5
S uper high dense cell design for low R DS (ON ).
S urface Mount P ackage.
-5.3A
67 @ V G S = -4.5V
D
D
D
D
8
7
6
5
S O-8
1
1
2
3
4
S
S
S
G
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
P arameter
Limit
Unit
Drain-S ource Voltage
V DS
30
V
Gate-S ource Voltage
V GS
20
V
Drain C urrent-C ontinuous a @ T J =125 C
b
-P ulsed
ID
5.3
A
IDM
20
A
Drain-S ource Diode Forward C urrent a
IS
1.9
A
Maximum P ower Dissipation a
PD
2.5
W
Operating Junction and S torage
Temperature R ange
T J , T S TG
-55 to 150
C
R JA
50
C /W
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S DM9435A
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -24V, V GS = 0V
-1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100
nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = -250uA
-1.5
-3
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS = -10V, ID =-5.3A
40
50
m-ohm
V GS = -4.5V, ID = -4.2A
67
90 m-ohm
On-S tate Drain Current
ID(ON)
gFS
-30
V
ON CHAR ACTE R IS TICS b
Forward Transconductance
DYNAMIC CHAR ACTE R IS TICS
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
R ise Time
Turn-Off Delay Time
V DS = -15V, ID = - 5.3A
A
-20
9
S
860
PF
470
PF
180
PF
c
Input Capacitance
Turn-On Delay Time
V DS = -5V, V GS = -10V
-1
V DS =-15V, V GS = 0V
f =1.0MH Z
c
tD(ON)
9
20
ns
10
40
ns
37
90
ns
23
110
ns
V DS =-15V,ID =-5.3A,V GS =-10V
15
20
nC
V DS =-15V,ID =-5.3A,V GS =-4.5V
8.7
10.5
nC
V DS =-15V, ID = -5.3A,
V GS =-10V
3
nC
4
nC
V D = -15V,
ID = -1A,
V GE N = - 10V,
R GE N = 6 -ohm
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
2
S DM9435A
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
5
V GS = 0V, Is =-5.3A
VSD
-0.84 -1.3
25
20
20
16
-I D , Drain C urrent (A)
-I D , Drain C urrent (A)
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
-V G S =10,9,8,7,6,5V
15
4V
10
5
0
3V
0.5
1.0
1.5
2.0
2.5
T j=125 C
12
8
4
0
0
-55 C
25 C
3.0
0
R DS (ON) , On-R es is tance(Ohms )
(Normalized)
3000
C , C apacitance (pF )
2500
2000
1500
C is s
C os s
C rs s
0
0
5
10
15
20
25
1.5
2
2.5
3
F igure 2. Trans fer C haracteris tics
F igure 1. Output C haracteris tics
500
1
-V G S , G ate-to-S ource Voltage (V )
-V DS , Drain-to-S ource Voltage (V )
1000
0.5
30
1.8
1.6
V G S =-10V
I D =-5.3A
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T j, J unction T emperature ( C )
-V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.09
V DS =V G S
I D =-250uA
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25
0
25
50
75
100 125 150
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
V G S =0V
12
-Is , S ource-drain current (A)
gF S , T rans conductance (S )
1.15
T j, J unction T emperature ( C )
15
9
6
3
V DS =-15V
5
10
15
10.0
1.0
0
0
20
0.4
-I DS , Drain-S ource C urrent (A)
0.6
0.7
0.9
1.1
1.3
-V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
50
V DS =-15V
I D =-5.3A
8
-I D , Drain C urrent (A)
V G S , G ate to S ource V oltage (V )
5
V th, Normalized
G ate-S ource T hres hold V oltage
S DM9435A
6
4
2
10
RD
0
2
4
6
8
10
12
14
Qg, T otal G ate C harge (nC )
im
it
10
10
0.1
0m
ms
s
1s
DC
V G S =-10V
S ingle P ulse
T A =25 C
0.1
16
)L
1
0.03
0
ON
S(
1
10
30 50
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S DM9435A
-V DD
ton
V IN
D
td(off)
V OUT
V OUT
5
tf
90%
90%
VG S
R GE N
toff
tr
td(on)
RL
10%
10%
G
90%
S
V IN
50%
10%
50%
INVE R TE D
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
Duty C ycle=0.5
0.2
P DM
0.1
0.1
t1
0.05
1.
2.
3.
4.
0.02
S ingle P uls e
0.01
10
-4
10
-3
10
-2
10
-1
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
t2
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
10
100