STMICROELECTRONICS STS4DNFS30L_07

STS4DNFS30L
N-channel 30V - 0.044Ω - 4A SO-8
STripFET™ MOSFET plus SCHOTTKY rectifier
General features
MOSFET
SCHOTTKY
VDSS
RDS(on)
ID
30V
<0.056Ω
4A
IF(AV)
VRRM
VF(MAX)
3A
30V
0.51V
S0-8
Description
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DCDC converters for printers, portable equipment,
and cellular phones.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STS4DNFS30L
S4DNFS30L
SO-8
Tape & reel
January 2007
Rev 4
1/12
www.st.com
12
Contents
STS4DNFS30L
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
................................................ 8
STS4DNFS30L
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source voltage (vgs = 0)
30
V
Drain-gate voltage (RGS = 20 kΩ)
30
V
Gate- source voltage
±16
V
ID
Drain current (continuous) at TC = 25°C
4
A
ID
Drain current (continuous) at TC = 100°C
2.5
A
Drain current (pulsed)
16
A
Total dissipation at TC = 25°C dual operation
2
W
IDM
(1)
PTOT
1. Pulse width limited by safe operating area
Table 2.
Symbol
VRRM
IF(RMS)
Schottky absolute maximum ratings
Parameter
Repetitive peak reverse
voltage
RMS forward current
IF(AV)
Average forward current
IFSM
Surge non repetitive forward
current
IRRM
IRSM
dv/dt
Table 3.
Rthj-a
TJ
Tstg
Value
Unit
30
V
20
A
3
A
75
A
1
A
1
A
10000
V/µs
TL=125°C
δ=0.5
tp = 10 ms
Sinusoidal
tp = 2 µs
Repetitive peak reverse current
F=1 kHz
Non repetitive peak reverse
tp = 100 µs
current
Critical rate of rise of reverse
voltage
Thermal data
62.5
°C/W
°C/W
Junction temperature
-55 to 150
°C
Storage temperature range
-55 to 150
°C
Thermal resistance junction-ambient
MOSFET(1)
1. Mounted on FR-4 board (steady state)
3/12
Electrical characteristics
2
STS4DNFS30L
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
Breakdown voltage
Test conditions
ID = 250 µA, VGS = 0
30
Unit
V
µA
VDS=Max rating,
TC=125°C
10
µA
±100
nA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±16V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 2A
VGS = 5V, ID = 2A
gfs (1)
Max.
1
Zero gate voltage
Drain current (VGS = 0)
Symbol
Typ.
VDS = Max rating
IDSS
Table 5.
Min.
1
V
0.044
0.051
0.055
0.065
Ω
Ω
Dynamic
Parameter
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
Min.
VDS= 15V, ID=2A
VDS = 25V, f = 1 MHz,
VGS = 0
Typ.
Unit
5
S
330
pF
90
pF
40
pF
6.5
VDD = 24V, ID = 4A,
VGS = 5V
Max.
9
nC
3.6
nC
2
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Table 6.
Symbol
4/12
Switching times
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=15 V, ID=2A,
RG=4.7Ω, VGS=5V
(see Figure 12)
11
100
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=15 V, ID=2A,
RG=4.7Ω, VGS=5V
(see Figure 12)
25
22
ns
ns
STS4DNFS30L
Electrical characteristics
Table 7.
Symbol
ISD
Source drain diode
Parameter
Test conditions
Min
Typ.
Max
Unit
Source-drain current
4
A
ISDM
(1)
Source-drain current (pulsed)
16
A
VSD
(2)
Forward on voltage
ISD = 4A, VGS = 0
1.2
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4A, VDD = 15V
di/dt = 100A/µs,
Tj = 150°C
(see Figure 14)
trr
Qrr
IRRM
35
25
1.4
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/12
Electrical characteristics
STS4DNFS30L
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/12
STS4DNFS30L
Electrical characteristics
Figure 7.
Gate charge vs. gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs. temperature
Capacitance variations
Figure 10. Normalized on resistance vs.
temperature
Figure 11. Source-drain diode forward
characteristics
7/12
Test circuit
3
STS4DNFS30L
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
Figure 15. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 16. Unclamped inductive waveform
8/12
Figure 17. Switching time waveform
STS4DNFS30L
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
9/12
Package mechanical data
STS4DNFS30L
SO-8 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
TYP.
1.75
0.1
MAX.
0.068
0.25
a2
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
c1
45 (typ.)
1.27
e
e3
3.81
0.150
3.8
4.0
0.14
L
0.4
1.27
0.015
S
0.244
0.050
F
M
10/12
MIN.
0.6
0.157
0.050
0.023
8 (max.)
STS4DNFS30L
5
Revision history
Revision history
.
Table 8.
Revision history
Date
Revision
Changes
21-Jun-2004
2
Complete version
10-Nov-2006
3
The document has been reformatted
26-Jan-2007
4
Typo mistakes on Table 1.
11/12
STS4DNFS30L
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