STS4DNFS30L N-channel 30V - 0.044Ω - 4A SO-8 STripFET™ MOSFET plus SCHOTTKY rectifier General features MOSFET SCHOTTKY VDSS RDS(on) ID 30V <0.056Ω 4A IF(AV) VRRM VF(MAX) 3A 30V 0.51V S0-8 Description This product associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DCDC converters for printers, portable equipment, and cellular phones. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STS4DNFS30L S4DNFS30L SO-8 Tape & reel January 2007 Rev 4 1/12 www.st.com 12 Contents STS4DNFS30L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STS4DNFS30L 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (vgs = 0) 30 V Drain-gate voltage (RGS = 20 kΩ) 30 V Gate- source voltage ±16 V ID Drain current (continuous) at TC = 25°C 4 A ID Drain current (continuous) at TC = 100°C 2.5 A Drain current (pulsed) 16 A Total dissipation at TC = 25°C dual operation 2 W IDM (1) PTOT 1. Pulse width limited by safe operating area Table 2. Symbol VRRM IF(RMS) Schottky absolute maximum ratings Parameter Repetitive peak reverse voltage RMS forward current IF(AV) Average forward current IFSM Surge non repetitive forward current IRRM IRSM dv/dt Table 3. Rthj-a TJ Tstg Value Unit 30 V 20 A 3 A 75 A 1 A 1 A 10000 V/µs TL=125°C δ=0.5 tp = 10 ms Sinusoidal tp = 2 µs Repetitive peak reverse current F=1 kHz Non repetitive peak reverse tp = 100 µs current Critical rate of rise of reverse voltage Thermal data 62.5 °C/W °C/W Junction temperature -55 to 150 °C Storage temperature range -55 to 150 °C Thermal resistance junction-ambient MOSFET(1) 1. Mounted on FR-4 board (steady state) 3/12 Electrical characteristics 2 STS4DNFS30L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 250 µA, VGS = 0 30 Unit V µA VDS=Max rating, TC=125°C 10 µA ±100 nA IGSS Gate-body leakage current (VDS = 0) VGS = ±16V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 2A VGS = 5V, ID = 2A gfs (1) Max. 1 Zero gate voltage Drain current (VGS = 0) Symbol Typ. VDS = Max rating IDSS Table 5. Min. 1 V 0.044 0.051 0.055 0.065 Ω Ω Dynamic Parameter Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. VDS= 15V, ID=2A VDS = 25V, f = 1 MHz, VGS = 0 Typ. Unit 5 S 330 pF 90 pF 40 pF 6.5 VDD = 24V, ID = 4A, VGS = 5V Max. 9 nC 3.6 nC 2 nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5. Table 6. Symbol 4/12 Switching times Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=15 V, ID=2A, RG=4.7Ω, VGS=5V (see Figure 12) 11 100 ns ns td(off) tf Turn-off delay time Fall time VDD=15 V, ID=2A, RG=4.7Ω, VGS=5V (see Figure 12) 25 22 ns ns STS4DNFS30L Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Test conditions Min Typ. Max Unit Source-drain current 4 A ISDM (1) Source-drain current (pulsed) 16 A VSD (2) Forward on voltage ISD = 4A, VGS = 0 1.2 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, VDD = 15V di/dt = 100A/µs, Tj = 150°C (see Figure 14) trr Qrr IRRM 35 25 1.4 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STS4DNFS30L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STS4DNFS30L Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STS4DNFS30L Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STS4DNFS30L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data STS4DNFS30L SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 3.8 4.0 0.14 L 0.4 1.27 0.015 S 0.244 0.050 F M 10/12 MIN. 0.6 0.157 0.050 0.023 8 (max.) STS4DNFS30L 5 Revision history Revision history . Table 8. Revision history Date Revision Changes 21-Jun-2004 2 Complete version 10-Nov-2006 3 The document has been reformatted 26-Jan-2007 4 Typo mistakes on Table 1. 11/12 STS4DNFS30L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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