STMICROELECTRONICS STS4DNFS30

STS4DNFS30
N-channel - 30V - 0.044Ω - 4.5A SO-8
STripFET™ Power MOSFET plus schottky rectifier
General features
Type
VDSS
RDS(on)
ID
STS4DNFS30
30V
<0.055Ω
4.5A
Schottky
IF(AV)
VRRM
VF(MAX)
4.5A
30V
0.53V
SO-8
Description
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing a large variety of DC-DC
converters for printers, portable equipment.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STS4DNFS30
S4DNFS30
SO-8
Tape & reel
July 2006
Rev 1
1/12
www.st.com
12
Contents
STS4DNFS30
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
.............................................. 8
STS4DNFS30
1
Electrical ratings
Electrical ratings
Table 1.
Mosfet absolute maximum ratings
Symbol
Parameter
Value
Unit
30
V
VDS
Drain-source voltage (VGS = 0)
VGS
Gate- source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
4.5
A
ID
Drain current (continuous) at TC = 100°C
3.2
A
Drain current (pulsed)
13
A
Total dissipation at TC = 25°C
2
W
Value
Unit
IDM
(1)
PTOT
1. Pulse width limited by safe operating area
Table 2.
Symbol
Schottky absolute maximum ratings
Parameter
VRRM
Repetitive peak reverse voltage
30
V
IF(RMS)
RMS forward current
10
A
IF(AV)
Average forward current
TL=125°C
δ=0.5
4
A
IFSM
Surge non repetitive forward current
tp=10ms
Sinusoidal
75
A
IRRM
Repetitive peak reverse current
tp=2µs
F=1kHz
1
A
IRSM
Non repetitive peak reverse current
tp=100µs
1
A
dv/dt
Critical rate of rise of reverse voltage
10000
v/µs
Value
Unit
62.5
°C/W
Storage temperature range Max
-55 to 150
°C
Junction temperature
-55 to 150
°C
Table 3.
Symbol
Thermal data
Parameter
Rthj-amb Thermal resistance junction-amb Mosfet
Tstg
Tj
(1)
1. Mounted on FR-4 board (steady state)
3/12
Electrical characteristics
2
STS4DNFS30
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 250µA, VGS = 0
VDS = Max rating
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TC=125°C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
IR (1)
VF (1)
Max.
1
10
µA
µA
± 100
nA
1
VGS = 10V, ID = 2A
VGS = 5V, ID = 2A
Unit
V
VGS = ± 20V
VGS(th)
Symbol
Typ.
30
IDSS
Table 5.
Min.
V
0.044
0.055
0.085
Ω
Ω
Typ.
Max.
Unit
6
200
15
µA
mA
0.325
0.45
0.375
V
V
0.43
0.53
0.51
V
V
Max.
Unit
Static
Parameter
Test conditions
Reverse leakage
current
Tj = 25°C
Tj = 100°C
VR = VRRM
Tj = 25°C
Tj = 125°C
IF = 2A
Zero gate voltage
drain current (VGS = 0) Tj = 25°C
Tj = 125°C
Min.
IF = 4A
1. Pulse test: tp=380µs, δ < 2%. To evaluate the conduction losses use the following equation:
P = 0.24 × I F ( AV ) + 0.068I 2 ( RMS )
F
Table 6.
Symbol
gfs
4/12
Dynamic
Parameter
Forward
transconductance
Test conditions
VDS =10V, ID =2A
Min.
Typ.
5
S
pF
pF
pF
nC
nC
nC
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
330
115
28
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 15V, ID = 4.5A,
VGS = 5V
(see Figure 13)
4.7
1.2
2.1
STS4DNFS30
Electrical characteristics
Table 7.
Switching times
Symbol
Parameter
Test Conditions
Min.
Typ.
Max Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 15V, ID = 2A,
RG = 4.7Ω, VGS = 5V
(see Figure 12)
9
17
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 15V, ID = 2A,
RG = 4.7Ω, VGS = 5V
(see Figure 12)
15
6
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 4.5A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5A, di/dt = 100A/µs
VDD = 15V, Tj = 150°C
(see Figure 17)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
22
14.3
1.3
Max. Unit
4.5
13
A
A
1.2
V
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/12
Electrical characteristics
STS4DNFS30
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Source-drain diode forward
characteristics
Figure 6.
Static drain-source on resistance
6/12
STS4DNFS30
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 11. Normalized BVDSS voltage vs
temperature
7/12
Test circuits
3
STS4DNFS30
Test circuits
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
Figure 15. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 16. Unclamped inductive waveform
8/12
Figure 17. Switching time waveform
STS4DNFS30
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STS4DNFS30
SO-8 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
TYP.
1.75
0.1
MAX.
0.068
0.25
a2
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
c1
45 (typ.)
1.27
e
e3
3.81
0.150
3.8
4.0
0.14
L
0.4
1.27
0.015
S
0.244
0.050
F
M
10/12
MIN.
0.6
0.157
0.050
0.023
8 (max.)
STS4DNFS30
5
Revision history
Revision history
Table 9.
Revision history
Date
Revision
19-Jul-2005
1
Changes
First release
11/12
STS4DNFS30
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