STS4DNFS30 N-channel - 30V - 0.044Ω - 4.5A SO-8 STripFET™ Power MOSFET plus schottky rectifier General features Type VDSS RDS(on) ID STS4DNFS30 30V <0.055Ω 4.5A Schottky IF(AV) VRRM VF(MAX) 4.5A 30V 0.53V SO-8 Description This product associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing a large variety of DC-DC converters for printers, portable equipment. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STS4DNFS30 S4DNFS30 SO-8 Tape & reel July 2006 Rev 1 1/12 www.st.com 12 Contents STS4DNFS30 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 STS4DNFS30 1 Electrical ratings Electrical ratings Table 1. Mosfet absolute maximum ratings Symbol Parameter Value Unit 30 V VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 4.5 A ID Drain current (continuous) at TC = 100°C 3.2 A Drain current (pulsed) 13 A Total dissipation at TC = 25°C 2 W Value Unit IDM (1) PTOT 1. Pulse width limited by safe operating area Table 2. Symbol Schottky absolute maximum ratings Parameter VRRM Repetitive peak reverse voltage 30 V IF(RMS) RMS forward current 10 A IF(AV) Average forward current TL=125°C δ=0.5 4 A IFSM Surge non repetitive forward current tp=10ms Sinusoidal 75 A IRRM Repetitive peak reverse current tp=2µs F=1kHz 1 A IRSM Non repetitive peak reverse current tp=100µs 1 A dv/dt Critical rate of rise of reverse voltage 10000 v/µs Value Unit 62.5 °C/W Storage temperature range Max -55 to 150 °C Junction temperature -55 to 150 °C Table 3. Symbol Thermal data Parameter Rthj-amb Thermal resistance junction-amb Mosfet Tstg Tj (1) 1. Mounted on FR-4 board (steady state) 3/12 Electrical characteristics 2 STS4DNFS30 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 250µA, VGS = 0 VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125°C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance IR (1) VF (1) Max. 1 10 µA µA ± 100 nA 1 VGS = 10V, ID = 2A VGS = 5V, ID = 2A Unit V VGS = ± 20V VGS(th) Symbol Typ. 30 IDSS Table 5. Min. V 0.044 0.055 0.085 Ω Ω Typ. Max. Unit 6 200 15 µA mA 0.325 0.45 0.375 V V 0.43 0.53 0.51 V V Max. Unit Static Parameter Test conditions Reverse leakage current Tj = 25°C Tj = 100°C VR = VRRM Tj = 25°C Tj = 125°C IF = 2A Zero gate voltage drain current (VGS = 0) Tj = 25°C Tj = 125°C Min. IF = 4A 1. Pulse test: tp=380µs, δ < 2%. To evaluate the conduction losses use the following equation: P = 0.24 × I F ( AV ) + 0.068I 2 ( RMS ) F Table 6. Symbol gfs 4/12 Dynamic Parameter Forward transconductance Test conditions VDS =10V, ID =2A Min. Typ. 5 S pF pF pF nC nC nC Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 330 115 28 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15V, ID = 4.5A, VGS = 5V (see Figure 13) 4.7 1.2 2.1 STS4DNFS30 Electrical characteristics Table 7. Switching times Symbol Parameter Test Conditions Min. Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD = 15V, ID = 2A, RG = 4.7Ω, VGS = 5V (see Figure 12) 9 17 ns ns td(off) tf Turn-off delay time Fall time VDD = 15V, ID = 2A, RG = 4.7Ω, VGS = 5V (see Figure 12) 15 6 ns ns Table 8. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 4.5A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.5A, di/dt = 100A/µs VDD = 15V, Tj = 150°C (see Figure 17) trr Qrr IRRM Test Conditions Min. Typ. 22 14.3 1.3 Max. Unit 4.5 13 A A 1.2 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/12 Electrical characteristics STS4DNFS30 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Source-drain diode forward characteristics Figure 6. Static drain-source on resistance 6/12 STS4DNFS30 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Normalized BVDSS voltage vs temperature 7/12 Test circuits 3 STS4DNFS30 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STS4DNFS30 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STS4DNFS30 SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 3.8 4.0 0.14 L 0.4 1.27 0.015 S 0.244 0.050 F M 10/12 MIN. 0.6 0.157 0.050 0.023 8 (max.) STS4DNFS30 5 Revision history Revision history Table 9. Revision history Date Revision 19-Jul-2005 1 Changes First release 11/12 STS4DNFS30 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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