SSG55N60 series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 55 AMP /600 Volts 1.65 V saturation ultrafast IGBT TO-254 and TO-254Z TO-258 and TO-259 Features: • • • • • Lowest ON-resistance in the industry Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Maximum Ratings Symbol Value Units Collector – Emitter Breakdown Voltage VCES 600 V Gate – Emitter Voltage VGE ±20 V @ TC = 25ºC @ TC = 100ºC ID1 ID2 55 27 A @ TC = 25ºC ID3 200 A L= 10 uH ILM 200 A EARV 20 mJ PD 195 W TOP & TSTG -55 to +150 ºC R0JC 0.64 (typ 0.35) ºC/W Max. Continuous Collector Current Max. Instantaneous Drain Current (Tj limited) Clamped Inductive Load current Repetitive Reverse Voltage Avalanche Energy Limited by Tj max Total Power Dissipation @ TC = 25ºC Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-254 (M) TO-254Z (Z) TO-258 (N) TO-259 (P) PIN 3 PIN 2 PIN 3 PIN 1 PIN 2 PIN 1 PIN 3 PIN 2 DATA SHEET #: TG0005A PIN 1 PIN 3 PIN 2 PIN 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DOC SSG50N60 series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics 4/ Symbol Min Typ Max VGE = 0V, IC = 250µA BVCES 600 –– –– V VGE = 0V, IC = 1 A BVECS 18 –– –– V VGE = 15V, IC = 27A, Tj= 25oC VGE = 15V, IC = 55A, Tj= 25oC VGE = 15V, IC = 27A, Tj= 150oC VCE(on) –– –– –– 1.65 2.0 1.6 2.0 –– –– V VGS(th) 3.0 –– 6.0 V VGE = ±20V IGES –– –– ±100 nA VCE = 600V, VGE = 0V, Tj = 25oC VCE = 10V, VGE = 0V, Tj = 25oC VCE = 600V, VGE = 0V, Tj = 150oC ICES –– –– –– 0.5 –– –– 250 2 5000 µA µA µA gfs 15 25 –– Mho Qg Q ge Q gc td(on) tr td(off) tf –– –– –– –– –– –– –– 180 25 60 35 20 175 90 275 40 90 –– –– 260 130 Eon Eoff Ets –– 0.12 0.55 0.66 –– –– 0.9 mJ td(on) tr td(off) tf Ets –– –– –– –– –– 33 25 230 120 1.6 –– –– 260 130 –– ns ns ns ns mJ Cies Coes Cres –– –– –– 4000 250 55 –– –– –– pF Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Saturation Voltage Gate Threshold Voltage VCE = VGE, IC = 0.25 mA Gate to Emitter Leakage Zero Gate Voltage Collector Current Forward Transconductance VCE = 15V, IC = 27A, Tj = 25oC VGE = 15V VCC = 400V IC = 27A Total Turn-on Gate Charge Gate to Emitter Turn-on Charge Gate to Collector Turn-on Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time VGE = 15V, VCC = 480V, IC = 27A, RG = 5.0O, Tj = 25oC Turn-On Switching Losses Turn-Off Switching Losses Total Switching Losses Turn on Delay Time Rise Time Turn off Delay Time Fall Time Total Switching Losses VGE = 15V, VCC = 480V, IC = 27A, RG = 5.0O, Tj = 25oC VGE = 15V, VCC = 480V, IC = 27A, RG = 5.0O, Tj = 150oC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCC = 30V f = 1 MHz Units nC nsec NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: SSG55N60M SSG55N60Z SSG55N60N SSG55N60P NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT (Standard) Package Drain Source Pin 1 Pin 2 TO-254 (M) Pin 1 Pin 2 TO-254Z (Z) Pin 1 Pin 2 TO-258 (N) Pin 1 Pin 2 TO-259 (P) DATA SHEET #: TG0005A DOC Gate Pin 3 Pin 3 Pin 3 Pin 3