Eudyna GaN-HEMT 180W Preliminary ES/EGN26A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm (typ.) @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition a in Rating Tc=25oC m i l e ry 120 -5 281.25 -65 to +175 250 Unit V V W oC oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item r P DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR Tch Condition Limit Unit 50 <TBD >-7.2 200 V mA mA oC RG=2 Ω RG=2 Ω ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition Pinch-Off Voltage Vp VDS=50V IDS=72mA Gate-Drain Breakdown Voltage VGDO IGS=- 36mA 3dB Gain Compression Power P3dB VDS=50V Drain Efficiency ηd IDS(DC)=1000mA Linear Gain GL f=2.6GHz Thermal Resistance Edition 1.2 Dec. 2005 Channel to Case Rth 1 min. Limit Typ. Max. -1.0 -2.0 -3.5 Unit V - -350 - V TBD 53.0 - dBm - 55 - % 14.0 - dB 0.8 oC/W TBD - 0.65 ES/EGN26A180IV High Voltage - High Power GaN-HEMT 56 100 54 54 90 52 52 80 50 70 48 60 46 50 Output Power [dBm] 50 48 46 44 42 40 38 36 2.45 44 a in 42 40 ry 40 30 20 38 2.50 2.55 2.60 2.65 2.70 2.75 m i l e Frequency [GHz] Pin=26dBm Pin=30dBm Pin=38dBm Pin=42dBm 10 36 25 27 0 29 31 33 Pin=34dBm r P Power Derating Curve 250 200 150 100 50 0 0 50 100 150 200 Case Temperature [o C] Edition 1.2 Dec. 2005 2 35 37 39 Input Power [dBm] 300 Total Power Dissipasion [W] Output Power [dBm] 56 250 300 41 43 Drain Efficiency [%] Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=1000mA f=2.6GHz Output Power vs. Frequency VDS=50V IDS(DC)=1000mA ES/EGN26A180IV High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=1000mA, f=1 to 4 GHz, Zl = Zs = 50 ohm +50j +100j 10Ω +25j 25Ω 50Ω +10j 0 2.6GHz -10j -25j m i l e -100j -50j r P +90° 2.6GHz 2.6GHz ±180° 10 Scale for |S21| Freq [GHz] 1.0 1.1 1.2 +250j 1.3 1.4 1.5 ∞ 1.6 1.7 1.8 1.9 -250j 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 0° 3.8 3.9 4.0 S12 0.1 S21 Scale for |S 12| -90° Edition 1.2 Dec. 2005 3 S11 MAG ANG 0.957 165.6 0.956 163.6 0.956 161.5 0.954 159.0 0.951 156.6 0.944 153.0 0.936 148.9 0.918 144.4 0.900 138.3 0.864 130.4 0.801 119.3 0.685 103.0 0.461 76.9 0.127 19.7 0.225 -137.7 0.363 -167.4 0.398 177.4 0.386 167.3 0.343 157.7 0.258 147.1 0.123 137.9 0.069 -85.7 0.282 -91.9 0.470 -108.2 0.606 -123.5 0.694 -136.2 0.747 -146.9 0.783 -156.2 0.800 -165.4 0.810 -174.0 0.810 177.1 S21 MAG ANG 0.367 -14.0 0.357 -19.3 0.359 -24.4 0.378 -30.2 0.415 -35.8 0.469 -42.4 0.556 -50.1 0.685 -59.1 0.895 -69.4 1.223 -81.8 1.764 -98.8 2.704 -121.5 4.175 -153.4 5.757 163.9 6.357 118.3 5.961 78.0 5.343 43.8 4.844 14.6 4.522 -12.6 4.398 -39.2 4.404 -67.6 4.384 -99.0 4.180 -133.5 3.645 -168.8 2.923 157.5 2.205 127.9 1.641 102.7 1.222 82.1 0.942 64.4 0.752 49.5 0.632 35.4 y r a in S12 MAG ANG 0.001 -13.4 0.001 -41.8 0.001 -55.6 0.001 -37.1 0.000 -22.2 0.000 -60.3 0.001 -86.6 0.001 -110.0 0.002 -116.6 0.003 -128.9 0.004 -154.1 0.008 -174.2 0.014 156.9 0.021 118.8 0.025 76.0 0.024 38.1 0.022 8.6 0.020 -16.2 0.019 -38.7 0.019 -61.9 0.020 -86.6 0.021 -112.8 0.020 -142.0 0.019 -168.8 0.017 169.6 0.014 150.7 0.013 136.1 0.012 127.1 0.011 119.5 0.011 106.6 0.011 95.0 S22 MAG ANG 0.915 170.5 0.913 169.7 0.912 168.5 0.917 167.0 0.918 165.0 0.920 162.7 0.917 159.8 0.913 156.4 0.905 152.4 0.898 147.4 0.876 140.7 0.833 131.3 0.731 117.6 0.517 100.1 0.228 92.5 0.114 173.0 0.284 -165.8 0.418 -174.2 0.496 173.4 0.533 159.2 0.531 141.2 0.482 117.1 0.407 81.9 0.364 30.5 0.425 -22.0 0.549 -59.7 0.657 -85.1 0.735 -103.4 0.782 -117.1 0.814 -127.5 0.834 -136.2 ES/EGN26A180IV High Voltage - High Power GaN-HEMT IV Package Outline Metal-Ceramic Hermetic Package r P m i l e y r a in PIN ASSIGNMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm Edition 1.2 Dec. 2005 4