ETC EGN010MK

Eudyna GaN-HEMT 10W
Preliminary
EGN010MK
High Voltage - High Power GaN-HEMT
FEATURES
・High Voltage Operation : VDS=50V
・High Power : 41.0dBm (typ.) @ P3dB
・High Efficiency: 60%(typ.) @ P3dB
・Linear Gain : 15dB(typ.) @ f=3500MHz
・Broad Frequency Range : 800 to 3700MHz
・Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with
50V operation, and gives you higher gain.
This device target applications are low current and wide band
applications for high voltage.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Pt
Tstg
Tch
r
P
Condition
a
in
Rating
Tc=25oC
m
i
l
e
y
r
120
-5
40.9
-65 to +175
250
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
Symbol
VDS
IGF
IGR
Tch
Condition
Limit
Unit
RG=50 Ω
RG=50 Ω
50
<2.0
>-0.5
200
V
mA
mA
oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
min.
Pinch-Off Voltage
Vp
VDS=50V IDS=2.6mA
Gate-Drain Breakdown Voltage
VGDO
IGS=- 1.3 mA
3dB Gain Compression Power
P3dB
VDS=50V
Drain Efficiency
ηd
IDS(DC)=100mA
Linear Gain
GL
f=3.5GHz
Thermal Resistance
Edition 1.0
June 2005
Channel to Case
Rth
1
Limit
Typ. Max.
-1.0
-2.0
-3.5
Unit
V
-
-350
-
V
40.0
41.0
-
dBm
-
60
-
%
14.0
15.0
-
dB
5.5
oC/W
-
4.5
EGN010MK
High Voltage - High Power GaN-HEMT
Output Power and Drain Efficiency vs. Input Power
VDS=50V IDS(DC)=100mA f=3.5GHz
42
42
100
40
40
90
38
38
34
32
30
28
26
Frequency [GHz]
Pin=14dBm
Pin=26dBm
Pin=18dBm
e
r
P
Pin=30dBm
il m
Pin=22dBm
36
60
32
50
30
a
in
28
24
45
90
40
80
36
70
34
60
32
50
30
40
28
Drain
Effi.
30
26
20
24
10
22
0
30
20
10
0
Input Power [dBm]
Power Derating Curve
Total Power Dissipation [W]
38
Output
Power
Drain
Effi.
10 12 14 16 18 20 22 24 26 28 30 32
100
Drain Efficiency [%]
40
y
r
40
22
Output Power and Drain Efficiency vs. Input Power
VDS=50V IDS(DC)=100mA f=2.17GHz
42
70
34
26
24
3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75
80
Output
Power
Drain Efficiency [%]
Output Power [dBm]
36
Output Power [dBm]
Pout [dBm]
Output Power vs. Frequency
VDS=50V IDS(DC)=100mA
35
30
25
20
15
10
5
0
0
10 12 14 16 18 20 22 24 26 28 30
100
200
Case Temperature [℃ ]
Input Power [dBm]
2
300
EGN010MK
High Voltage - High Power GaN-HEMT
S-Parameters @VDS=50V IDS=100mA f=0.5 to 5.5 GHz
Zl = Zs = 50 ohm
Marker : 3.5GHz
+50j
+25j
+100j
10Ω
25Ω
50Ω
+10j
0
+250j
∞
3.5GHz
3.5GHz
-250j
-10j
-25j
r
P
+90°
3.5GHz
±180° 20
Scale for |S21|
3.5GHz
0.2
Scale for |S 12| -90°
S11
MAG
0.867
0.853
0.848
0.844
0.843
0.839
0.838
0.839
0.836
0.833
0.830
0.826
0.822
0.814
0.805
0.798
0.780
0.767
0.751
0.730
0.703
0.673
0.640
0.600
0.551
0.499
0.441
0.382
0.328
0.291
0.288
0.316
0.371
0.433
0.497
0.556
0.604
0.651
0.688
0.718
0.745
0.766
0.787
0.803
0.816
0.825
0.834
0.841
0.845
0.853
0.855
m
i
l
e
-100j
-50j
S11
Freq
[GHz]
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
0°
4.1
4.2
4.3
4.4
4.5
4.6
4.7
S12 4.8
S21 4.9
5.0
5.1
5.2
5.3
5.4
5.5
S22
3
ANG
-127.5
-137.8
-146.1
-153.2
-159.3
-164.4
-169.0
-173.5
-177.2
179.2
175.9
172.5
169.5
166.5
163.5
160.6
157.3
154.0
150.4
146.6
142.0
136.9
131.2
124.4
116.5
106.5
94.6
79.6
59.9
34.3
5.2
-21.9
-43.9
-61.6
-75.6
-87.3
-97.0
-105.5
-112.4
-119.0
-124.4
-129.5
-134.1
-138.2
-142.1
-145.9
-149.4
-152.8
-156.3
-159.9
-162.9
S21
MAG
ANG
13.500
88.8
11.482
79.3
9.889
70.8
8.679
63.1
7.627
55.9
6.803
49.4
6.100
43.4
5.520
37.3
5.030
31.8
4.592
26.4
4.235
21.8
3.909
17.0
3.637
12.5
3.425
8.6
3.226
4.4
3.085
0.2
2.941
-3.6
2.848
-7.8
2.773
-12.0
2.707
-16.6
2.664
-21.0
2.639
-25.9
2.613
-31.0
2.611
-36.9
2.614
-42.9
2.613
-49.5
2.608
-56.9
2.594
-64.3
2.551
-72.4
2.513
-81.1
2.429
-89.7
2.332
-98.4
2.217
-107.2
2.069
-115.7
1.934
-123.7
1.778
-131.7
1.652
-138.6
1.518
-145.6
1.399
-151.9
1.291
-157.5
1.194
-163.4
1.106
-168.5
1.037
-173.9
0.975
-179.3
0.920
176.6
0.877
171.3
0.829
166.6
0.798
161.5
0.768
155.8
0.741
150.3
0.721
144.6
a
in
y
r
S12
MAG
0.011
0.011
0.011
0.011
0.010
0.010
0.009
0.009
0.008
0.007
0.007
0.007
0.006
0.006
0.006
0.006
0.005
0.005
0.005
0.005
0.005
0.005
0.006
0.006
0.007
0.008
0.008
0.009
0.010
0.011
0.012
0.012
0.012
0.013
0.012
0.013
0.012
0.012
0.011
0.011
0.010
0.010
0.010
0.010
0.009
0.009
0.010
0.009
0.011
0.011
0.013
ANG
8.7
1.3
-4.9
-10.4
-16.2
-19.8
-23.1
-25.7
-27.4
-27.7
-29.7
-29.8
-30.1
-30.1
-28.7
-26.9
-28.1
-23.0
-18.6
-16.9
-13.5
-10.1
-7.7
-7.5
-9.9
-10.2
-11.8
-18.0
-24.7
-33.2
-41.5
-52.5
-62.0
-69.4
-79.5
-87.3
-95.0
-105.1
-111.3
-117.8
-122.8
-129.7
-132.9
-136.2
-137.9
-139.4
-140.0
-137.1
-140.6
-140.3
-143.7
S22
MAG
0.763
0.758
0.758
0.762
0.767
0.771
0.777
0.780
0.789
0.796
0.800
0.802
0.807
0.816
0.817
0.826
0.828
0.839
0.851
0.857
0.863
0.869
0.874
0.881
0.891
0.893
0.900
0.909
0.909
0.916
0.922
0.923
0.924
0.919
0.921
0.916
0.910
0.909
0.899
0.895
0.886
0.876
0.869
0.857
0.848
0.838
0.821
0.810
0.793
0.777
0.765
ANG
-54.8
-62.8
-70.5
-77.5
-84.4
-90.5
-96.5
-102.0
-107.0
-112.1
-116.2
-120.0
-123.3
-126.5
-129.8
-132.4
-134.8
-136.9
-138.8
-140.9
-142.5
-144.5
-145.7
-147.3
-149.0
-150.6
-151.9
-153.9
-155.6
-157.1
-158.9
-160.7
-162.8
-164.8
-166.7
-169.1
-170.8
-173.0
-175.0
-176.9
-179.5
178.7
176.3
174.3
172.2
169.5
167.2
164.9
162.0
159.7
156.7